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The Vt variability in scaled FinFETs with gate length (Lg) down to 25 nm was systematically investigated, for the first time. By investigating the gate oxide thickness (Tox) dependence of Vt variation (VTV), the gate-stack origin, i.e., work-function variation (WFV) and gate oxide charge (Qox) variation (OCV) origin VTV were successfully separated. It was found that the atomically flat Si-fin sidewall...
We derive a three-dimensional (3-D) analytical model of scale length for nanoscale SOI tri-gate FET (SOI-FinFET) and discuss its significance. This work takes into account the difference in permittivity between the fin (channel) and the gate insulator, and thus permits this model accurate for the analysis of SCEs in nanoscale FinFET with high-k gate dielectric. Based on the theory, we analyze the...
In this paper, automotive panel for injection molding processes analysis and die design is presented. Injection molding parts on the instrument panel through the structural and process analysis to determine the parting surface, gating systems. Injection molding parts conduct mold flow analysis to determine the feasibility, and the die gating system and the gas-assisted injection molding process are...
E-mode GaN FETs fabricated on N-polar GaN have several unique scaling advantages such as vertical scaling of channel with back barrier for better electron confinement and regrowth of the n+ source/drain regions for reduced access resistance. They can also be integrated with recently demonstrated high performance N-polar D-mode devices enabling novel circuit functionalities. Ga-polar E-mode devices...
In this paper, based on the simple Pz orbital model, the energy diagram of armchair and zigzag graphene nanoribbons (A-GNR & Z-GNR) are studied by considering the first and third nearest neighbors (FNN & TNN). Then, we applied the Non-Equilibrium Green Function method to calculate the conduction in A-GNR. Thereafter, we analyzed the single gated GNRFET in real space provided that under any...
In this paper, the impact of multi-layered gate design assimilation on Gate Material Engineered Trapezoidal Recessed Channel (GME-TRC) MOSFET has been studied for wireless applications in terms of linearity performance metrics, using device simulators: ATLAS and DEVEDIT, and compared with conventional Trapezoidal Recessed channel (TRC) and GME-TRC MOSFETs. Simulation study reveals that GME-TRC MOSFET...
An definition for Assistive Technology (AT) was formulated in 2001 stating “Assistive Technology (AT) is any product or service designed to enable independence for disabled or older people.” This definition was adopted by the authors of the European Union (EU), ZigBee will play an important part towards the adoption of Assistive Technology by enabling wireless low-power communication between devices...
The work-function fluctuation (WKF) in 16-nm single- and triple-fin field effect transistors (FETs) with different aspect ratio (AR) of device geometry is for the first time explored. The influences of grain size of metal gate and AR on σIoff/σIon are drawn; the device with high AR and large number of silicon fin can suppress the WKF. The triple-fin FinFET (AR = 2) is superior to triple-fin tri-gate...
High quality thin barrier InAlN/AlN/GaN heterostructure was grown by metal-organic chemical vapor deposition (MOCVD). The metal-insulator-semiconductor (MIS) structure devices were fabricated with high dielectric constant material barium strontium titanate (BST). The gate leakage current is reduced more than one order of magnitude under 40 V reverse bias, by using the high dielectric constant material...
The 60 mV/dec limit for subthreshold swing at 300 K is generally considered a fundamental limit that cannot be defeated. The physical origin of this limit is revisited in this paper and the fact that this limit is in part determined by the density-of-states (DOS) of the source is highlighted. A scheme of engineering this DOS is proposed as a possible way to achieve subthreshold swing much lower than...
Al incorporation in the High-κ/metal gate stack is studied for pMOS transistors application. Al is here incorporated before or after high-k deposition, or during the metal deposition. Using bevelled oxides and Internal photoemission (IPE), we discriminate and quantify the three key mechanisms shifting the effective metal workfunction WFMeff: (1) a dipole (up to ~1 eV!) build up at the SiO2/High-κ...
The Gravity Recovery And Interior Laboratory (GRAIL) mission was the first Jet Propulsion Laboratory (JPL) project initiated under NASA's revised rules for space flight project management, NPR 7120.5D, "NASA Space Flight Program and Project Management Requirements." NASA selected GRAIL through a competitive Announcement of Opportunity (AO) process and funded its Phase B Preliminary Design...
Voltages in medium voltage (MV) systems as for example in MV drives, wind generation and smart grids are in the range of several kV. Hence, switches of medium power systems need gate drive power supplies which consider a galvanic isolation for safety reasons. In this paper a gate supply with a capacitive compensated air transformer for medium voltage systems is presented. This approach not only has...
Developing wireless nanodevices and nanosystems are of critical importance for sensing, medical science, defense technology and even personal electronics. Power sources are indispensable for independent, sustainable, maintain-free and continuous operations of implantable biosensors, ultrasensitive chemical and biomolecular sensors, nanorobotics, micro-electromechanical systems, remote and mobile environmental...
We propose new system of an all-optical AND gate and inverter that can be used to generate logic operation result by using a short pulse laser input. A system consists of an add-drop optical filter and an intensity switch that can be integrated into a single system. We have successfully simulated AND gate and inverter. Results obtained have shown that they can be used in terms of truth tables satisfaction...
This paper reports on lateral nanoelectromechanical (NEM) relays based on variations of a two- or three-mask titanium nitride (TiN) sidewall stringer process. Electrically isolated TiN perimeter beams are fabricated from stringers formed on the inside walls of polysilicon trenches, yielding 200 nm wide TiN fins and 200 nm gaps; these dimensions are 3X smaller than the resolution limit of the optical...
A 4-terminal (4T) relay technology is proposed for complementary logic circuit applications. The advantage of the 4T relay design is that it provides a means for electrically adjusting the switching voltage; as a result, a 4T relay can mimic the operation of either an n-channel or p-channel MOSFET. Fabricated 4T relays exhibit good on-state current (Ion > 700 ??A for VDS = 1 V) and zero off-state...
As a daily transport, Mass Transit Railway (MTR) is playing an increasingly important role in our life. By comparing the MTR systems in different countries, we summarize their advantages and disadvantages, and then choose the best design to make sure that people may escape from the subway in emergency situations.
Compared with the conventional high electron mobility transistor (HEMT), the metal-insulator-semiconductor (MIS)-HEMT has several advantages such as lower gate leakage current, higher maximum saturation drain current and the better restrain of current collapse. This paper studied the effects of temperature and the thickness of dielectric on the characteristics of Al2O3 MIS-HEMT. The device characteristics...
Floating gate (FG) devices using barrier-engineered (BE) tunneling dielectric have been studied both theoretically and experimentally. Through WKB modeling the tunneling efficiency of various multi-layer tunneling barriers can be well predicted. Experimental results for FG devices with oxide-nitride-oxide (ONO) U-shaped barrier are examined to validate our model. Furthermore, a 1Mb test chip was fabricated...
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