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This paper presents a reliability model for wafer level chip scale packages (WLCSP) assembled with Sn4%Ag 0.5%Cu (SAC 405) solder. The reliability model is based on a creep constitutive model that takes into consideration the dimensions of the solder joints and a thermo-mechanical fatigue crack growth model. The creep constitutive model was derived from over 250 constant load creep tests performed...
The temperature dependence of device performance is a critical factor that determines overall product power-performance. We show HKMG gate stacks drive significantly higher threshold temperature dependence over poly-Si/SiON. We further show that in SOI, the work-function engineering enabled by HKMG integration schemes can result in even higher Vt temperature sensitivity attributed to differences in...
Temperature (T) dependence of threshold voltage (Vt) for high-k metal gate stack (HK/MG) CMOS is investigated thoroughly. It is found, for the first time, that T dependence of Vt (dVt/dT) for HK/MG CMOS shows asymmetrical behavior between N and PFETs unlike conventional Poly-Si/SiON CMOS. Moreover, this dVt/dT asymmetry is observed even if capping techniques for Vt tuning are applied to high-k dielectrics...
The temperature dependence of the sensor response towards CO of SiC-FET sensors has been studied by combining in situ DRIFT spectroscopy and sensor response measurements. The DRIFT spectroscopy studies have been performed on a model sensor representing the top layer of a SiC-FET sensor with porous Pt gate. Adsorbates on the model sensor have been studied at varying temperatures and gas concentrations,...
The formation of Cu2SnZnSe4 thin films in the selenization of different sequential metallic and alloy films is investigated. It is shown that the main process of low temperature selenization (up to 300degC) is the formation of different binary copper selenides on the layer surface. High temperature selenization (over 400degC) leads to the formation of Cu2ZnSnSe4 phase with some excess of a separate...
Reliabilities of high-k stacked gate dielectrics are discussed from the viewpoint of the impact of initial traps in high-k layer. TDDB reliability can be explained by the generated subordinate carrier injection (GSCI) model. While initial traps increase the leakage current, they do not degrade the TDDB reliability. In contrast, the BTI reliability is strongly degraded by initial traps.
Continuous scaling, necessary for enhanced performance and cost reduction, has pushed existing CMOS materials much closer to their intrinsic reliability limits, forcing reliability engineers to get a better understanding of circuit failure. This requires that designers will have to be very careful with phenomena such as high current densities or voltage overshoots. In addition to the reliability issues,...
Advances in micromachining technology can facilitate the integration of SAW (Surface Acoustic Wave) devices and CMOS circuitry on IC scale substrate for Monolithic fabrication. The optimal design and performance of these filters can be reached by using new Smart materials. The key component in the structure of the SAW device is the piezoelectric materials used which depends mainly on some important...
At Institute for Electrophysics and Electric Power Russian Academy of Sciences (IEE RAS) from the middle of 60th of the XX century, the investigations of pulsed electric arcs burning in hydrogen, nitrogen, argon etc., at high initial density are carried out. For this time, many powerful pulsed plasmatrons, electrodischarge light gas launchers, and experimental facilities had been developed. The highest...
Ionic conductivity of composites MeClO4-Al2O3 (Me = Li, Na, K, Rb and Cs) was investigated. It was found that in all composites the conductivity goes through a maximum. Maximum conductivity was observed for nanocomposites based on lithium perchlorate which are promising solid electrolytes for intermediate temperature solid state electrochemical devices.
C60 solids have been known as high resistive semiconductor materials. Such high resistivity is one of the reasons of low charge transport efficiency in organic solar cells. Mg doping in C60 films was done by the co-evaporation method of C60 and Mg sources. The conductivity could be controlled by the composition ratio of Mg/C60, and its dependence is divided into 3 ranges (Mg/C60 = 0∼2, 2∼6, ≫6). Temperature...
Recently, thin rare-earth oxide dielectric capping layers between the high-k and metal gate have been used to modulate the threshold voltage (Vt) of MOSFETs [Kirsch et al., 2006]. In Dy2O3-capped high-k based devices, we observe an anomalous PBTI behavior where the Vt decreases during stress. Results suggest that there are two competing mechanisms - diffusion of preexisting positively-charged species...
Capacitive humidity sensors were fabricated using countersunk interdigitated electrodes coated with amorphous nanostructured TiO2, SiO2, and Al2O3 thin films grown by glancing angle deposition. The capacitive response and response times for each sensor were measured. The sensor utilizing TiO2 exhibited the largest change in capacitance, increasing exponentially from ~ 1 nF to ~ 1muF for an increase...
ldquoDevelopment for advanced thermoelectric conversion systemsrdquo supported by the new energy and industrial technology development organization (NEDO) has been successfully completed as one of the Japanese national energy conservation projects. Three types of the cascaded thermoelectric modules operating up to 850 K in high electrode temperature and two types of Bi-Te thermoelectric modules operating...
Thermoelectric properties of ternary silver thallium tellurides: Ag8T12Te5 and AgT13Te2 were studied above room temperature to slightly below the melting temperature. As for Ag8T12Te5, the effects of Te content on the thermoelectric properties were also studied by characterizing the samples of Ag8T12Tex (x = 5.0, 5.1, 5.2). Both compounds show positive Seebeck coefficient (S). Ag8T12Te5 indicates...
Decreasing the length of thermoelectric (TE) module legs results in a significant increase in power density, both for cooling applications and electricity generation. However, this reduction also results in a significant increase of mechanical stress in the legs materials. Thus, it is important to implement an effective method to characterize the mechanical properties, such as mechanical spectroscopy,...
A theoretical model is proposed in this work for an evaluation of the specific heat and Debye temperature of thin-film semiconductors. In the model, the specific heat contributed by the confined acoustic phonons is calculated first. An effective Debye temperature is then defined by fitting the conventional Debye model to the calculated specific heat. It is found that the so-defined Debye temperatures...
The polycrystalline samples of BaSi2, SrSi2, and LaSi were prepared by spark plasma sintering (SPS). The electrical resistivity (rho) and Seebeck coefficient (S) were measured above room temperature. The S of BaSi2 was negative and the absolute values were rather high (-669 muVK-1 at 337 K). The S of SrSi2 was positive and the absolute values were lower (118 muVK-1 at 332 K) than those of BaSi2. For...
We report thermoelectric characterization of Bi2-xSbxTe3 (x = 0.5, 1.0, and 1.5) synthesized by a solvothermal method using DMF as solvent. For Bi2Te3, the size of the edge and thickness of the hexagonal nanoplatelets are 200-250 nm and 20-25 nm, respectively. Bi2Te3 nanosheets appear to grow epitaxially from the surface of the Te tubes, which forms in the first step and acts as the template for the...
Bulk nanostructured (Bi,Sb)2Te3 compounds and GeTe based amorphous/nanocrystal composites have been successfully fabricated by the combined hydrothermal/hot-pressing and quenching/annealing methods, respectively. The (Bi,Sb)2Te3 nanopowders synthesized by hydrothermal method exhibit a hollow-like structure. After hot-pressing, the nanoscale grains varying from tens to hundreds of nanometers were found...
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