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This work proposes a new method for the extraction of the flatband voltage, effective nanowire width and doping concentration of junctionless nanowire transistors. The accurate extraction of such parameters is essential for the understating of the device behavior and for the prediction of its performance in circuits through analytical models. The method is validated using 3D numerical simulations...
We report on the thermal and electrical performance of nitrogen (N) and carbon (C) doped GeSe thin films for selector applications. Doping of GeSe successfully improved its thermal stability to 450°C. N doping led to a decrease in the off-state leakage and an increase in threshold voltage (Vth), while C doping led to an increase in leakage and reduced Vth. Hence, we show an effective method to tune...
Silicon Carbide (SiC) bipolar integrated circuits are a promising technology for extreme environment applications. SiC bipolar technology shows stable operation over a wide range of temperature. However, the current gain of the devices is suffering from high surface recombination, due to poor oxide passivation. In this paper we propose a gated base structure that offers improved current gain control...
Surface roughness causes random shifts in the lowest sub-band level around its ideal position. This gives rise to tail states of an otherwise step-like DOS of the 2D electron gas in the channel. These tail states cause a gradual onset of tunneling in a TFET with vertical tunnel paths and degrade the sub-threshold swing. The impact of roughness of the semiconductor/oxide interface on the transfer characteristics...
Ballisticity in 14nm-node FinFETs is investigated by Monte Carlo device simulation. Analytic doping profiles are reverse-engineered to measured transfer characteristics of FinFETs from literature and from this work and good agreement between Monte Carlo simulations and measurements is achieved without any device-parameter calibration. The ballistic ratio, defined as the ratio of the on-current with...
The hysteresis in the gate transfer characteristics of transistors made of two-dimensional materials is one of the most obvious problems of this novel technology. Here we attempt for the first time to develop a physical modeling approach for describing this hysteresis in devices based on two-dimensional materials. Our model is based on a drift-diffusion TCAD simulation coupled to a previously established...
Recent research progresses on dopant diffusion and segregation, Si-Ge interdiffusion and defect engineering in SiGe material systems are reviewed, which are relevant to SiGe-based semiconductor devices including SiGe PNP hetero-junction bipolar transistors, metal-oxide-semiconductor field-effect transistors, and Ge-on-Si lasers. Experiment data and continuum modeling are discussed.
High-performance electronics on flexible substrates along with low-cost fabrication by printing has gained interest recently. For this purpose, the printing of inorganic semiconductors based micro/nanostructures such as nanowires etc. are being explored. However, due to thermal budget, the controlled selective source/drain doping needed to obtain transistors from such structure remains a bottleneck...
The parallel and transverse magnetoresistance in InSb and GaSb whiskers doped with tin and tellurium, respectively, were investigated in the temperature range 4.2–77 K and magnetic field 0–14 T. Shubnikov-de Haas magnetoresistance oscillations were revealed at low temperatures for both semiconductor materials with impurity concentration near the metal-insulator transition. The following parameters...
The softness and the switching losses are the key characteristics to evaluate the quality of the ultra voltage power diodes, especially for high frequency application. In this paper, we applied the Controlled Injection of Backside Holes (CIBH) structure to the 10kV SiC diode based on TCAD, by which, the softness and snap-off characteristics of the diode is significantly optimized compared with conventional...
The doping of liquid crystals (LCs) with carbon nanotubes and magnetic nanoparticles have attracted wide interest in many areas of science, technology and medicine. LCs occur as additional, thermodynamically stable states of matter between the liquid state and the crystal state in some materials. They can be characterized by a long-range orientational order of the molecules and, as a consequence,...
The process of managing the financial recover of the enterprise RosElectronics is considered as an economic category, characterized by recession and post-crisis development of Russian economy. It is assumed that progressive changes in the development of electronic enterprises are determined by rates of creation and development of their strong growth and upgrade. Improvement of methodology and tools...
Interface charges are easy to accumulate between two different dielectrics with various characteristics, which may cause accelerated degradation of insulation systems. Ethylene-propylene-diene terpolymer (EPDM) is used mainly for HVDC cable joint, which is the most vulnerable part of the cable system because of the interface. Particles with nonlinear conductivity can be doped into the polymer matrix...
The CZTS, CZTSe and CZTSSe compounds are promising for use as an absorber in thin film solar cells (SC), especially given the relatively low cost of PV modules production based on them and widespread of elements in the earth's crust. In recent years the efficiency of SC based on them has increased significantly, however, it needs new innovative solutions for their sustainable competition with CIGS...
In this work, an alternative type of high mobility semiconductor, zinc oxynitride (ZnON), is studied by both theoretical calculations and experimental evaluation of thin films and TFT devices. It is demonstrated that the addition of fluorine, in ZnON, removes the formation of nitrogen vacancies, and significantly improves electrical characteristics of the ZnON TFT.
Reliable doping in semiconductor nanowires is essential for the development of novel optoelectronic devices. Dopant incorporation within the nanowire can allow for optimisation of key optoelectronic properties, such as electron mobility and carrier lifetime. Thus, in-depth characterisation of doping mechanisms in semiconductor nanowires and their effect on the nanowire optoelectronics properties is...
Optical damage of congruent lithium niobate (LiNbO3) is a long-known problem. A popular method to limit this damage is doping LN with magnesium. Here, the dielectric permittivity of pure and magnesium-doped lithium niobate was characterized depending on the crystal orientation over a broad frequency range: 1 mHz to 0.75 PHz (λ=300 nm), using impedance measurements, quasi-optical free-space characterization,...
Based on multiple quantum wells, we design a pumping-detection quantum cascade structure for the detection of terahertz (THz) radiation. In the structure, electrons are pumped by a mid-infrared (MIR) laser to an excited state, and then extracted by longitudinal optical (LO) phonon stairs. Within the stairs, THz absorption wells are designed. The LO-phonon stair extractor make electrons transport between...
We present an experimental investigation of the nonlinear response of acceptor impurities in semiconductors to coherent excitation with intense THz fields. In Zn-doped GaAs, we observed a well-defined saturation of the transition from the impurity ground state to the excited states and valence band. In B-doped Si, however, there is a clear indication of field-induced distortion of the impurity energy...
Development of resonant-tunnelling diodes (RTDs) and THz RTD oscillators in the recent years is described. Strategies and concepts to increase their operating frequencies are pointed out, different types of fundamental RTD oscillators outlined. Novel concepts of THz RTD oscillators are indicated.
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