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Silicon Carbide (SiC) MOSFETs offer rapid switching and low on-state voltages. Connecting SiC MOSFETs in series will enable high voltage high frequency applications. Nonetheless, the output capacitances of SiC MOSFETs are often found to ring with the significant stray inductance inevitably found in circuits with series connected devices. The active voltage control gate drive method is used here to...
The most commonly used pixel structure in integrated circuit technologies is the three-transistor pixel structure (3-T). This structure consists of a pixel, a reset transistor, a source follower and a pixel select transistor. An extension to this is the 4-T pixel structure where an extra transistor is included to enable current steering in the readout phase and reset phase. This greatly reduces current...
This paper examines the effect of using normal Class A/B bias for kW-level GaN and LDMOS transistors used in radar and avionic systems. It is shown that Class A/B bias results in an overall efficiency which is typically 5–10% less than the efficiency during the pulse as well as generating significant shot noise in the off period which can cause receiver de-sensitization. A novel automatic gate pulsing...
This paper presents a compact architecture of portable functional electrical stimulator (FES) together with a level-shifting digital inverter. The presented architecture is composed of boost converter block with compact limiter circuit. The bi-phasic pulse generation is made from H-bridge switches with the boosted voltage from the boost converter block. The H-bridge switches are controlled by a level-shifting...
A multiple-string LED driver with low total harmonic distortion (THD) by sinusoid-like reference and minimum components is presented in this paper. The proposed commutating method is able to control the source-coupled-pair by simplest circuitry and without passive components. The reference voltage is divided from rectifier in order to minimize the THD. The simulated 4-strings LED driver is able to...
This paper presents a galvanically isolated gate-driver integrated circuit realized as an ASIC chipset providing a flexible control of the switching speed of the driven power switches (i.e., IGBT or MOSFET). The driver chipset provides signal and power transmission over a galvanic isolation, thus being able to drive low-side and high-side power switches in power converters. It provides independent...
High voltage pulse generators can be used effectively in water treatment applications, as applying a pulsed electric field on the infected sample guarantees killing of harmful germs and bacteria. In this paper, a new high voltage pulse generator with closed loop control on its output voltage is proposed. The proposed generator is based on DC-to-DC boost converter in conjunction with capacitor-diode...
Wide-bandgap power switches, based on SiC and GaN, are emerging on the semiconductor market. Standard resistor drivers are insufficient to exploit all the advantages of these new devices. Fine control over current and voltage waveforms during switching, equivalent on-state resistance and immunity to noisy environments, demand the development of dedicated drivers. This study aims at determining a suitable...
Dual three-phase (asymmetrical six-phase) induction motors have received significant attention in high power medium voltage drive applications. Typically, two three-phase voltage source converters are needed to feed such a drive system. In medium voltage applications, multilevel inverters are preferred as they provide a stepped output voltage waveform that reduces dv/dt stresses and provides a better...
An output capacitor-less low dropout regulator with three quick-responding (QR) loops is implemented in 0.18 μm CMOS technology, featuring low sensitivity with changes in input voltage and load current. The proposed capacitor-less LDO has high stability for a current load from 0 to 100 mA and a capacitor load of 100 pF while the dropout voltage is 200 mV. A buffer is used to improve loop gain. The...
Wide-bandgap devices are under the spotlight of scientific research as they exhibit great performance in terms of efficiency and temperature operation. However, to fully exploit their characteristics, dedicated driving circuits are needed. High-power gate-insulated switching devices exhibit important input capacitance; when fast switching speeds are demanded, high-current pulses are needed to drive...
In order to improve the grid-connected inverters for industry or solar fields, for example, we have done intensive research with future control methods using direct current control for such usually pulse-width modulation (PWM) controlled inverters. This paper investigates whether current measurements via sigma-delta converters are good and fast enough for the high dynamic performance of a direct current...
This paper presents the analysis, design and hardware implementation of a medium voltage gate-driver for a 3 kV IGBT application. The immediate application of such device is a 10 kW Electronic Transformer (Solid State Transformer) prototype, applied to a single phase 7967/220V distribution line. In this work, it is presented the gate-driver topology, the isolated power supply analysis and the experimental...
This paper presents a unique gate driver technology that demonstrates reduction in switching losses based on experimental results. This technology involves the reuse of parasitic elements of a commutation cell as feedback in order to control the dI/dt in the IGBT as well as the dV/dt across it. The Reflex™ gate driver technology, which use the parasitic inductance of the emitter connection...
Synthesizable all-digital ADCs lead to reduced design cost and design time as well as to low cross-technology porting costs. VCO-based ADC is an attractive candidate for the synthesis of ADCs using standard cells. However, a VCO, which is controlled by an analog input signal, is difficult to implement using standard digital circuits. Supply controlled ring oscillators using static CMOS inverters are...
This paper presents a high slew-rate error amplifier (EA) used to implement a capacitorless low-dropout voltage regulator (LDO) with a very fast transient response. The proposed EA improves a recently published OA structure, by employing high-swing input buffers and a local common mode feedback. Thus, the figures-of-merit related to the EA gain-bandwidth and slew-rate are 2.75, respectively 24 times...
This paper presents the design of a high-voltage driver based on stacked standard low-voltage CMOS with an adapted level shifter. Both circuits are designed in 65-nm TSMC technology with a nominal voltage of 2.5 V without any passive elements. The control voltages to regulate the stacked transistors of the HV-driver are achieved by proposing cascode self-biasing method, therefore no reference voltages...
A 1.8 V capacitor-free linear regulator with fast transient response based on a new topology with a fast and slow regulation loop is presented. The design has been laid out and simulated in a 0.18 µm CMOS process. The design has a low component count and is tailored for system-on-chip integration. A current step load from 0–50 mA with a rise time of 1 µs results in an undershoot in the output voltage...
The current-fed two-inductor boost converter (CF-TIBC) has previously been demonstrated to have advantages in operating low voltage and high current input applications. Such characteristics are suited for photovoltaic (PV) or battery application, likes energy storage system (ESS) or electric vehicle (EV). In this paper, the current-fed two-inductor bi-directional DC/DC converter (CF-TIBDC) is proposed...
Three-dimensional (3-D) NAND flash technology has been attracting much attention in recent years, for it overcomes the challenges of scaling limitation faced by 2-D NAND flash and meets the demand of higher storage density and lower bit cost. Several 3-D NAND flash architectures has been proposed recently. [1-3] However, most of these structures have adopted poly-crystalline silicon (poly-Si) as the...
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