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The main of this paper is to present a new bridgeless AC/DC topology without electrolytic capacitor. The topology is described and studied by simulation. Experimental results on a LED driver demonstrator using bidirectional GaN transistor validate the proposed circuit.
This paper presents an experimental investigation of the switching energy loss and peak overvoltage occurring in a half-bridge Insulated Gate Bipolar Transistor (IGBT) converter which is switched using an Active Gate Drive. A range of voltage profiles is systematically applied to the IGBT gate and the resulting switching behaviour is measured to obtain the switching energy loss and peak overvoltage...
Integrated Voltage Regulators (IVRs) have become a viable solution for microprocessor's power delivery. The active parts of the most recent IVRs are built in deep-submicron CMOS technologies and use stacked transistors to allow for the use of advanced low voltage devices with superior switching performance compared to the higher voltage long-channel devices. This paper evaluates three different topologies...
The state of art secure digital computing systems heavily rely on secure hardware as the Trusted Computing Base to build upon the chain of trust for trusted computing. Attack Protection Blocks are added to the hardware to prevent an adversary from bypassing the security provided by hardware using various side channel, voltage, frequency, temperature, and other attacks. However, attackers can target...
IoT requirements are almost as varied as the Things to which they are applied, but common demands are maximum battery life with minimum system cost and physical volume. Sub-threshold operation is promising, but even a single un-optimized or always-on component can eliminate low-voltage gains elsewhere. This work presents a highly integrated sub-threshold capable ARM based MCU with fully integrated...
This paper proposes a novel approach to realize highly linear MOSFET-C filters. The proposed method is combination of the methods in [7] and [8]. The method requires two control voltages which are applied to gate terminals of MOSFETs operating in non-saturation region while the methods in [8] does more than two control voltages. Requirement of several control voltages might cause much distortion at...
Normally-on Silicon Carbide (SiC) JFETs are considered promising switching semiconductor devices for solid state DC breaker due to their small on-resistance and robustness with short-circuit. In the self-power DC solid-state circuit breaker using normally-on SiC JFET, a very fast and reliable protection driver is required to generate a sufficient negative voltage to turn and hold off the SiC JFET...
This work proposes a low-dropout (LDO) regulator to provide low supply voltage of 0.5 V with the input range from 0.7 V to 0.9 V. The reference voltage of this LDO regulator is generated with the zero temperature coefficient circuit composed by MOS transistors in the subthreshold condition. And the error amplifier utilizes the constant gate-source potential mirrored biasing techniques to cope with...
The reduction of electromagnetic emissions (EME) in switch mode power supplies (SMPS) has high importance especially in automotive applications. The main methods to influence the switching behaviour of SMPS are external filters, spread spectrum techniques and the output driver circuits. This paper presents the concept and its implementation of an output driver with adaptive current source control...
This paper presents a fully integrated low-power 0.18 μm CMOS Low-Dropout (LDO) voltage regulator for battery-operated portable devices. A single stage high-gain folded cascode-compensated amplifier is used to attain good static performances, while thanks to a very simple dynamic bias circuit, transient performances are significantly enhanced. Results validate a 1.2 V output voltage from a 3.3 V to...
This paper investigates the advanced IGBT gate driving strategies which optimizes its switching behaviours and compares with the conventional driving method. The optimal IGBT performance not only relies on its advanced semiconductor design and fabrication techniques, but also the optimized local control and protection from intelligent gate drivers and global converter control strategy. An advanced...
The voltage boosting control (VBC) is presented to achieve low-power and high slew-rate error amplifier for enhancing the load transient response of dc-dc converters. The VBC is employed to increase/decrease the gate voltages of the output-stage transistors of the error amplifier, leading to large current driving capability with simple circuitry during transient. In addition, the accelerative scheme...
In this paper, a DC power supply for wide input-voltage range and multi output, which is applied to both 200-V and 400-V power sources, is proposed. This power supply consists of a flying-capacitor three-level PFC and a LLC resonant three-level DC/DC converter. In the PFC, the circuit topology enables to use 600-V devices, minimize the detection circuit and the gate drive circuit, and reduce the size...
Reducing the supply voltage of digital circuit to its sub-or near-threshold region is critical for achieving minimum energy point (MEP) operation. However, as the supply voltage on the load is lowered, the overall efficiency of conventional circuit architecture using DC-DC converter also decreases. In this work, we demonstrate a stacked load architecture regulated by an auxiliary switched-capacitor...
Floating-gate transistors have been used in many systems to add non-volatile memory. By storing a precise amount of charge on the electrically isolated floating gate, these devices can be used in analog applications as programmable current sources. However, manipulating the stored charge must be done with voltage drops that exceed the supply voltage. In this paper, we present a method to program floating-gate...
This paper presents a low-power fully integrated 0.18 μm CMOS Low-Dropout (LDO) Voltage Regulator for battery-operated portable devices. A single stage high-gain telescopic cascode-compensated amplifier is used to attain good static performances, while thanks to a very simple dynamic bias circuit, transient performances are significantly enhanced with no quiescent current penalty. Results validate...
This paper presents an output-capacitorless class-AB low-dropout (LDO) regulator with load current sinking and sourcing ability. The proposed LDO consists of two complementary pass transistors, controlled using a level shifter technique. The transient improvement section applied to the gates of the pass devices enhances the transient performance of the LDO. The proposed LDO is designed in TSMC 0.18...
Floating-gate transistors have found many applications in both analog and digital systems due to their ability to serve as long-term non-volatile memory. When used in programmable analog applications, the charge on the floating gates must be set very precisely, thereby necessitating precise and steady high voltages to generate programming conditions. In this work, we present a regulated charge pump...
As chips increase in complexity with ever increasing power consumption, pressure in efficient power delivery mechanism such as multi-VDD, voltage stacked and DVS continues to rise. The main objective is to reduce the overall current delivered to the chip. For instance, in voltage stacking, if the circuit is stacked in 2 levels and supply voltage is doubled, the current drawn will be reduced by half...
This paper presents a highly linear current-controlled ring-oscillator (CCRO) circuit for current-to-frequency ADC in smart sensing. The proposed CCRO topology employs a distributed regulation of the oscillator rail voltage for lowering its sensitivity with respect to the controlling input current. The use of a current conveyor for this purpose ensures the stability of the current-steering control...
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