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We propose and analyze the resonant plasmonic terahertz detectors based on the split-gate field-effect transistors with electrically induced p-n junctions and graphene and perforated graphene channels. The perforation of the p-n junction depletion region leads to the tunneling suppression and the substantial reinforcement of the detector resonant response.
This paper presents the fabrication, electrical characterization, and simulation of planar single electron transistors. Two single electron transistors facing each other have been used to demonstrate single charge detection. The manufacturable fabrication process combined with both single charge detection and the simulation tool are a powerful platform for quantum cellular automata that can be applied...
This paper presents a high responsivity THz detector formed of two depletion mode pseudomorphic high electron mobility transistors (D-pHEMT) coupled to an on-chip bowtie antenna in GaAs 130 nm technology. The measured absolute responsivity of the integrated detector is 10 V/W at 250 GHz at a gate bias voltage of −0.3 V. A silicon lens attached to the GaAs substrate improves the responsivity of the...
We present an asymmetric NMOS terahertz detector fabricated in a foundry process without any process modifications. Due to a threshold voltage shift, the detector responds optimally at a zero voltage gate-bias, with a measured responsivity (Rv) of 450 V/W and noise equivalent power (NEP) of 80 pW/√Ήz for a 0.65 THz radiation chopped at 1 kHz. The operational simplicity of such detector can be leveraged...
A charge preamplifier has been developed in a 65 nm CMOS technology for processing the signal from the inner pixel layers of the CMS detector, in view of the experiment upgrade for the High Luminosity (HL) LHC. The circuit is part of a readout channel implementing a time-over-threshold method for analog-to digital-conversion of the charge signal. Samples of the circuit have been exposed to high doses...
Fault Attacks methods like Electro-Magnetic PulseInjection or Body Biasing Injection have recently been demon-strated to be efficient against smartcards and Systems on Chip. As of now, security is a main constraint in product development, even for low-cost products riding the trend of the IoT (mostof these devices operate in hostile environments). Unfortunately, the implementation of hardware countermeasures...
We experimentally verify that the low external responsivity of nanostructured asymmetric-dual-grating-gate high-electron-mobility transistors (A-DGG HEMTs) as plasmonic terahertz detectors developed so far is attributed to their low external coupling efficiency. We separately demonstrate (1) 4-fold enhancement of the efficiency by an array of series-connected 4×1 detectors due to the increase in the...
The conventional range gated lidar systems require long laser pulse width and range bins to maintain the far detection range, which limits the ranging resolution of the system. A range gated lidar system with phase coded method is proposed with high ranging resolution. The system utilizes a kN+1 bits of the laser pulse sequence and controls the accumulation of the detector in the range bins to get...
An integrated current detector designed to protect high voltage LDMOS power switches is presented in this paper. The proposed detector monitors the current of power switches by a mirrored ratio current. Power switches can be automatically turned off once the mirrored current exceeds the predetermined triggered value and thereby protect power switches from being damages. The response time of current...
The circuit structure is the key factor to determine the performance of CMOS THz detector. This paper presents four different structures of the terahertz detection circuit and their performance are analyzed. The common source(CS), common gate(CG), cascode and source differential circuits are designed in 0.18µm CMOS process. Under the conditions of the same input power level and transistor parameters,...
We propose new non-quasi-static (NQS) FET-based compact model with non-resonant plasmonic detection mechanism in terahertz (THz) frequency regime by verifying the successful transient and plasmonic response simulation at Rg= 0.2 Ω. In comparison with experimental results with td= 50 ns, we obtain the validity of our compact model for designing a real-time operating multi-pixel plasmonic THz detector.
In Positron Emission Tomography (PET) and Quantum Optics, the quality of the reconstructed images is directly proportional to the quality of the employed coincidence detectors, which provide important timing information about the location of the emitted nuclear particles. This paper proposes a new circuitry, called precise coincidence detector (PCD). It consists of two RS latches, is of low complexity,...
An overview of recent results concerning THz detection related to plasma nonlinearities in nanometer field effect transistors is presented. In particular, the research on the dynamic range of these detectors is described and two different technologies GaAs and GaN are compared. As a conclusion, we will show first real world applications of the plasma field effect transistors based THz detectors: demonstrators...
Array of field-effect transistors (FET) with asymmetric T-gates and floating electrodes fabricated on a single chip was used as terahertz (THz) detector. Nonresonant detection with strong photovoltaic response was realized due to excitation of electron plasma oscillations in the common channel of the FETs array. Voltage responsivities obtained by the array of FETs with floating electrodes surpass...
Many recent studies have been reported that the current distribution has non-uniformity in IGBT under Unclamped inductive switching (UIS) condition. Those discussions are based on the calculation result performed using device simulators. And, the observation of thermal action of device has been reported by using the IR thermography. The non-uniform temperature distribution on chip and thermal map...
In Optical Time-Resolved Reflectance, a pair of injecting and collecting optical fibers are placed at a fixed source-detector separation from each other typically in the range of 20 to 40mm limited by the detector dynamic range. To increase the sensitivity to higher penetration depth of investigation, the source and the detector separation should be small. We first show with simulation results that...
A 2×VDD I/O buffer with process and voltage (PV) compensation technique is proposed. In this research, the purpose of slew-rate compensation is to maintain slew rate (SR) within predefined ranges regardless PV variations. The reason of temperature variation is not considered is that it is found to be a relatively low correlation factor to slew rate for 90 nm process. All bias voltages in process and...
For a high-resolution radar, an extended target is characterized by a few main scatterers spread over several range gates not necessarily consecutive. The joint detections and localizations of these scatterers are of particular interest in order to estimate the range profile and identify the target. In this paper, we study a detector based on the Generalized Likelihood Ratio Test considering the unknown...
This paper presents the design of the arc fault pressure and temperature detectors that is able to detect the overpressure and overheating in the interior of the low voltage switchboard prior to the occurrence of an arcing fault. The simulation results show that the proposed arc fault pressure and temperature detectors will activate the relay and send a trip signal to the circuit breaker if and only...
Detection properties of the field-effect transistor with a low-Schottky-barrier gate in the microwave and terahertz ranges are studied. Various circuits of the detector are considered. Input impedance, responsivity, and noise equivalent power of the transistor are found. The effect of the Schottky-barrier height of the gate on these characteristics are analyzed.
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