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We propose advanced non-quasi-static (NQS) compact model of field-effect transistor (FET) for the characterization of a non-resonant plasma-mode terahertz (THz) detector in THz frequency regime by verifying the gate resistance effects on the transient delay and non-resonant plasmonic mechanism with characteristic length, which is a propagation distance of 2-dimensional electron gas (l2DEG), in the...
We report a highly-sensitive plasmonic nano-ring transistor for monolithic terahertz (THz) active antenna. By designing an ultimate asymmetric transistor on a metal-gate structure, more enhanced (180 times) channel charge asymmetry has been obtained in comparison with a bar-type asymmetric transistor of our previous work. In addition, by exploiting ring-type transistor itself as a monolithic circular...
We propose new non-quasi-static (NQS) FET-based compact model with non-resonant plasmonic detection mechanism in terahertz (THz) frequency regime by verifying the successful transient and plasmonic response simulation at Rg= 0.2 Ω. In comparison with experimental results with td= 50 ns, we obtain the validity of our compact model for designing a real-time operating multi-pixel plasmonic THz detector.
Terahertz (THz) imaging technology has a great potential application owing to the unique properties of THz wave that has both permeability and feature of straight [1]. Especially for real-time THz imaging detectors, field-effect transistor (FET)-based plasmonic THz detectors [2] are now being intensively developed in multi-pixel array configuration by exploiting the silicon (Si) CMOS technology advantages...
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