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A heterostructure transistor with quantum dots (QD) is a perspective device due to its increase of electrons' drift velocity in the channel. In this work simulation results of doublechannel heterotransistor with QD are present. QD application causes significant drain current increasing.
We present a study of quantum confined electroabsorption and carrier dynamics in polar c-plane and nonpolar a-plane InGaN/GaN quantum heterostructures. We demonstrate red-shifting absorption edge, due to quantum confined Stark effect, in nonpolar InGaN/GaN quantum structures in response to increased electric field, while we show the opposite effect with blue-shifting absorption spectra in polar quantum...
We have observed dramatic photoluminescence quenching caused by relocation of photogenerated electrons under large internal electric fields, inherent in GaN/AlN asymmetric-coupled quantum wells.
This paper reports that the maximum electric field is a dominant factor for current collapse phenomena and reliability in high-voltage GaN-HEMTs. The relation between the dynamic on-resistance increase caused by the collapse phenomena and the maximum electric field peak showed universality, which was independent from the field plate (FP) structure and the wafer. The gate-edge electric field strongly...
In this paper we carry out study of the Field Plate (FP) effects on AlGaN/GaN HEMTs (high electron mobility transistors) by modeling the electric field in the structure FP-HEMT (with Field Plate). It consist to analyze the maximum of the electric field according to the gate voltage and drain voltage taking into account several technological parameters of the Field Plate such as the passivation layer...
An analytical approach for calculating the electric field and designing field plates (FP) for reducing the peak electric field in the channel and at the surface of high electron mobility transistors (HEMTs) for a given gate and drain voltage is presented in this paper. The difference caused by the field plate is better demonstrated by the electrical field distribution in the channel. A 50% reduction...
In conclusion, we studied electric field dependence of radiative recombination lifetime (taur) in polar InGaN/GaN quantum heterostructures. We experimentally and theoretically showed that (taur) decreases with increasing external electric field. As a result of our study, we demonstrated Fermi's golden rule in polar InGaN/GaN quantum heterostructures.
Since Element Six reported in 2002 extremely high holes and electrons mobilities in intrinsic single crystal layers, synthetic diamond emerged as a promising semiconductor suitable for active electronic devices. Having the best physical and electrical theoretical properties among wide band gap semiconductors, diamond might become a serious competitor for silicon carbide (SiC) and gallium nitride (GaN)...
In given work the method for growing the AlN layers on sapphire substrate with MBE method from ammonia is considered. An influence of growth conditions on quality of obtaining layers is investigated.
In this paper we have investigated the effectiveness of employing the single field-plate (SFP) technique to enhance the breakdown voltage (BV) of AlGaN/GaN power high electron mobility transistors (HEMTs).A systematic procedure is provided for designing the SFP device, using two dimensional (2-D) simulation to obtain the maximum improvement in the drain-source current (IDS) and to achieve maximum...
A novel Composite-Channel AlxGa1-xN/AlyGa1-yN/ GaN HEMT is designed and optimized. The influence of two-dimensional electron gas and electric field on device structure parameter is obtained from the self-consistent solution basing on theory of semiconductor energy band and quantum well. The influence of the layer structure of the device on its performance is obtained from simulation of TCAD software...
In this article, we propose to use the strained Al0.03Ga0.97N/In0.01Ga0.99N superlattice as the quantum barrier of the InGaN LEDs. The advantage of doing this could be thought of relieving the biaxial strain for the normal InGaN/AlGaN MQWs, and improving the crystalline quality. Experimentally, high-resolution X-ray diffraction (HRXRD) was used to clarify the structural properties of the as-grown...
We report on the experimental demonstration of a novel n-channel GaN epilayer RESURF GaN MOSFET with good trade-off between breakdown voltage and specific on-resistance for the first time. Device with 4 mum channel length and 16 mum RESURF length has breakdown voltage up to 730 V with specific on-resistance 34 mOmega-cm2 (VG-VT=20 V).
The paper presents hole transport calculations for contact resistances to p-type GaN with thin InGaN cap layers of 20 A or less thickness, taking explicitly into account three different kinds of holes with very different effective masses and mass anisotropies the split-off, heavy and light holes. It is shown that polarization discontinuity induces electric fields of several MV per cm that reduce the...
Schrodinger equation and Poisson equation are solved self-consistently for Al0.5Ga0.5N/GaN heterojunctions grown along the c axis, then the distribution of electrons and the exact energy of all the bounded states confined in heterojunctions are gotten, and the electrons are found to take up the first two subbands. Considerable magnitude of Rashba spin splitting for the first subband at the Fermi level...
In order to explain the obtained experimental results on electron field emission from nanostructured surfaces of GaN, a model was proposed taking into account the changing of carrier concentration distribution in the main and the satellite valley during the emission process. The lowering of work function (due to the increased number of carriers in the satellite valley) can explain the decrease of...
The effect of mobile space charge on the high frequency properties and performance of DDR p+ p n n+ wurtzite GaN IMPATT diodes at terahertz frequency has been investigated. The studies are based on modeling and computer simulation method developed by the authors. The high frequency properties of DDR IMPATTs based on GaN at terahertz frequency regime are not available in the literature. It is observed...
We have theoretically studied the velocity-field characteristics in zinc-blende (zb) GaN by solving the Boltzmann transport equation with the help of one-particle Monte-Carlo method. The deformation potential acoustic phonon, polar optical phonon, alloy, impurity and inter-valley phonon scatterings have been included in our computations. At an electric field of approximately 50 kV/cm, the negative...
Results of computer aided studies on mm-wave performance of GaAs (narrow band gap, Eg= 1.42 eV) and zinc-blende (ZB) phase GaN (wide band gap, Eg= 3.2 eV) double drift IMPATT diode for frequencies of operation in the range of 35 to 140 GHz indicate avalanche breakdown at very high electric field for ZB-GaN diode with exhibition of seven times higher breakdown voltage for ZB-GaN (331 V) compared to...
It has recently been postulated that GaN high electron mobility transistors under high voltage stress degrade as a result of defect formation induced by excessive mechanical stress that is introduced through the inverse piezoelectric effect. This mechanism is characterized by a critical voltage beyond which irreversible degradation takes place. We have built a first-order model for the critical voltage...
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