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The nonlinear interaction of strong millimeter electromagnetic waves with silicon integrated p-i-n-structures placed in a metallic waveguide is investigated theoretically. The nonlinear equation added by proper boundary conditions has been formulated and solved numerically. An influence of the strong electromagnetic wave results in the excess injection of carriers into the semiconductor i-region between...
In this paper, we present the performance of the first frequency multiplier using the non-linearity of distributed SIS junctions. The prototype doubler based on distributed SIS junction was for the first time able to pump an SIS mixer. The multiplication efficiency of the distributed SIS junction is 15–30 % for a fractional bandwidth of 10% with excellent spectral line purity. The measured −3 dB line...
The paper focuses on a selection process of boost diodes for Active Power Factor Correctors (APFC) based on the Boost converter. The choice of the suitable boost diode plays crucial role for an efficiency of APFC. The main aim of the paper is devoted to theoretical and experimental comparison of the diodes. We have compared two ultra fast silicon diodes optimized for a Continuous Conduction Mode (CCM),...
Power density increase is one of the challenges of Wind Power Converters and the use of Silicon Carbide semiconductors is a promising solution due to the enhanced performance in terms of switching behaviour. This is demonstrated on an existing Wind Power Converter with a hybrid module of SiC based Diode and Silicon IGBT.
This paper presents an ultra thin body Si n-TFET which exploits a multi-finger gate layout and steep junction formed by dopant implantation into silicide (IIS) process. The sub-threshold slope (SS) reaches a minimum value of about 45 mV/dec, average SS of <60mV/dec and 71mV/dec over one and three decades of drain current, respectively. A remarkable high Ion/Ioff ratio (∼109) is achieved due to...
A total of 73 dual polarization superconductor-insulator-superconductor (SIS) receivers for the Atacama Large Millimeter/submillimeter Array (ALMA) have been successfully produced to observe astronomical signals in the 787–950 GHz frequency band. The receivers use two double sideband (DSB) waveguide mixers with Nb/AlOx/Nb tunnel junctions and NbTiN/SiO2/Al microstrip tuning circuits on quartz substrate...
A calculation method based on the partial capacitance is proposed to analyze the voltage-dependence capacitance system of IGBT(Insulated Gate Bipolar Transistor). The capacitance system of IGBT is modeled with semiconductor junction capacitors and MOS(Metal-Oxide-Semiconductor) capacitors, and each capacitance is obtained by solving the junction voltage under the external bias voltages. At last, the...
Passivating junctions, like hole-collecting p+-polycrystalline silicon/SiOx/crystalline silicon junctions, need a thermal treatment to activate their excellent passivation and contact properties. Aside from surface passivation and from contact resistance between poly-Si and the substrate, the sheet resistance within the poly-Si is another important parameter for solar cell design. We present electrical...
High dose (5E15/cm2) and low dose (5E13/cm2) Ultra-Shallow-Junction (<10nm) implantation into 100-200nm Ge-epi on Si wafers with 308nm laser sub-melt to melt annealing for dopant activation, damage recovery and mobility effects was investigated. Half wafer Ge-PAI was used for additional amorphization. Ge-epi implant damage recovery annealing shows a TW reverse trend from that typical in Si with...
Advanced inductively coupled plasma techniques and surface treatments have been used to demonstrate 5 nm conformal shallow junctions at low energy with no silicon structure damage. N-type PH3 plasma-assisted doping was characterized by dopant diffusion and electrical activation with increasing wafer temperature. Plasma-assisted doping at high wafer temperature showed no structure damage even at a...
Flash Lamp Annealing (FLA) is a well-known process for activation annealing in ultra-shallow junctions. Since our FLA tool has a flexible flash function that allows adjustments of the order of milliseconds, it is possible to realize precise diffusion control in the nanometer range. With soak pulse FLA the junction depth (Xj) can be easily controlled by the soak pulse time while achieving a high activation...
This paper gives a better insight of the short circuit capability of state-of-the-art SiC MOSFET power modules rated at 1.2 kV by highlighting the physical limits under different operating conditions. Two different failure mechanisms have been identified, both reducing the short-circuit capability of SiC power modules in respect to discrete SiC devices. Based on such failure mechanisms, two short...
In this work, we investigated the influence of retrograde-well implantation on hetero-structure body-tied germanium (Ge) FinFET [1]. Using structural engineering, the retrograde well was fabricated prior to Ge epitaxy, which could avoid the activated temperature of dopant in Si substrate. With optimizing the implant condition, the p-Ge/n-Si hetero-structure junction exhibited high ION/IOFF ratio and...
This work investigates quantum ballistic transport in ultra-small junctionless semiconducting nanowire transistors, within the framework of self-consistent Schrodinger-Poisson problem. A sub-band decomposition approach has been taken to make the problem numerically tractable. Finally simulated transport characteristics for small diameter (d≤5 nm) n-Si-channel cylindrical gate-all-around junctionless...
This paper introduces oblique and lateral components into interleaved junction. Analytical model to characterize the complex interleaved interfaces is proposed, achieving nearly 23% reduction on energy consumption and 50% on VπLπ compared with traditional lateral junctions.
Now a days different Junction less Transistor(JLT) structures proposed which includes silicon on insulator(SOI) JLT, Double gate (DGLJT) JLT, Bulk planar JLT, Gate all around(GAA) JLT etc. to improve performance parameters such as sub threshold slope(SS), off state leakage current, drain induced barrier lowering(DIBL) etc. In this paper, JLTs with dual spacer structures shows better improvement as...
The continuing rise in demand for energy places a similarly increasing demand to improve power production methods and efficiency. In regards to solar power generation, one major limiting factor with existing photovoltaic (PV) systems is the management of heat produced and photon interactions with the PV device. Typical devices operate within the 300–1000 nm range of the solar spectrum, greatly limiting...
The formation of p-n junctions is a crucial step in the fabrication of photovoltaic devices. Standard processes such as high temperature (> 800 °C) diffusion cannot provide the shallow doped layers, with abrupt interfaces. In this study, the epitaxial-like boron-doped silicon (epi-Si) thin films as emitters of c-Si solar cells with structure of ITO/epi-Si(p+)/c-Si(n) are investigated under the...
In this study, we demonstrate the high performance few-layer graphene-Si sensor with high photoresponsivity of 95 mA/W, operation behaviors with external bias as low as 0 V, and broadband operating light wavelength from 400 nm to 1000 nm by combining high transparency of few-layer graphene and n-type silicon. Although external bias benefits the photoresponsivity, the larger dark current is the price...
In this work, the electrical transport in Al/A2O3/Pt and Al/A2O3/Al junctions under mechanical stress was investigated. The junctions were fabricated by evaporation for the metals (with shadow mask lithography) and Atomic Layer Deposition (ALD) for the A2O3. First, IV characteristics were extracted from the unstressed sample and these curves were fitted with the Fowler-Nordheim current expression...
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