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III-V lasers grown on Si is the most promising solution to light sources on Si platform. The silicon-based telecommunications-wavelength III-V lasers with low threshold current density, high output power, and long lifetime will be presented.
Strained heteroepitaxial HEMTs without the mechanical support of a substrate have been demonstrated only for small-sized AlGaN/GaN membranes, i.e., the substrate was removed from within the immediate vicinity of the transistor area [1]. Such transistors have exhibited improved breakdown voltage and frequency response. However, wafer-scale substrate removal has been considered detrimental to the heterostructure...
Flexible 2.5 cm × 2.5 cm PZT thin films on polyimide substrate were successfully obtained through a release and transfer process developed in this work. The released films not only functioned, but had superior properties compared to films grown on silicon wafers. This approach to flexible piezoelectric devices provides opportunities for sensors, transducers, and energy harvesters.
Hall-effect measurements for n-type and p-type GaN with low doping concentration are presented. The GaN layers were grown by metal-organic vapor phase epitaxy on hydride-vapor-phase-epitaxy-grown free-standing GaN substrates. For n-GaN, the origin of acceptor which compensating donor is not only C but also native defects for the Si doping concentration of 1016 cm−3 level. The electron mobility is...
We present vertical InAs nanowire MOSFETs on Si with an In0.7Ga0.3As drain. The devices show Ion and gm/SS record performance for vertical MOSFETs and Ioff below 1 nA/μm at Vd 0.5 V. We show a device with gm=1.4 mS/μm and SS=85 mV/dec, therefore having Q-value (gm/SS) of 16. The device has Ion=330 μA/μm and 46 μA/μm at Ioff 100 nA/μm and 1 nA/μm, respectively. Furthermore, we show a device with SS=68...
High-performance Silicon photonics platform based on an advanced Si CMOS technology is a key to produce low-power integrated photonic chips for the optical interconnect in data transmission. The state-of-the-art Silicon photonics technology has been developed by using 40 nm CMOS technology. Key features are highly reproducible optical devices and high-quality epitaxial growth Ge for photodetectors...
We report the first monolithic integration of InGaAs channel transistors with lasers on a Si substrate, achieving a milestone in the direction of enabling low power and high speed opto-electronic integrated circuits (OEICs). The III-V layers for realizing transistors and lasers were grown epitaxially on the Si substrate using MBE. InGaAs n-FETs with Ion/Ioff ratio of more than 106 and very low off-state...
The world's first GeSn p-FinFETs formed on a novel GeSn-on-insulator (GeSnOI) substrate is reported, with channel lengths Lch down to 50 nm and fin width WFin down to 20 nm. In comparison with other reported GeSn p-FETs, record low S of 79 mV/decade, record high Gm, int, of 807 μS/um (VDs of −0.5 V), and the highest Gm, int/Ssat, were achieved. The highest high-field hole mobility of 208 cm2/Vs (at...
A 320×240 back-illuminated Time-of-Flight CMOS image sensor with 10μm CAPD pixels has been developed. The back-illuminated (BI) pixel structure maximizes the fill factor, allows for flexible transistor position and makes the light path independent of the metal layer. In addition, the CAPD pixel, which is optimized for high speed modulation, results in 80% modulation contrast at 100MHz modulation frequency.
Inorganic nanomaterials such as nanowires (NWs) and nanotubes (NTs) are explored for future flexible electronics applications due to their attributes such as high aspect ratio, enhanced surface-to-volume ratio, prominent mobility and ability to integrate on non-conventional substrates. Device performance of semiconducting NWs are demonstrated to be superior compared to the organic counterparts. Among...
In this work, a viable passive components and transmission media technology is presented for THz-Monolithic Integrated Circuits (THz-MIC). The developed technology is based on shielded microstrip (S-MS) employing a standard monolithic microwave integrated circuit compatible process. The S-MS transmission media uses a 5-µm layer of benzocyclobutene (BCB) on shielded metalized ground plates avoiding...
We investigate the mechanism of interfacial layer formation on Si1−xGex (0 < x < 0.5) channel and its correlation to hole mobility. It is found that the mobility degradation in low-Ge-content Si1−xGex (x < 0.2) pFETs is attributed to a Ge-rich top surface in the channel directly induced by interfacial layer formation. In addition, the depth profile of a Si-rich top surface in high-Ge-content...
As transistor technologies continue to scale and device density increases, junction formation requirements are subject to increasing challenges. Ion implantation is the preferred approach for junction formation due to its precise control of dopant depth and dose. These aspects are crucial to deliver finely tuned transistor performance and limit device variation. Arsenic and phosphorus (n-type) dopants...
The increasing demand for higher performance of ULSI circuits requires aggressive shrinkage of device feature sizes in accordance with Moore's law. Plasma processing plays an important role in achieving fine patterns with anisotropic features in metal-oxide-semiconductor field-effect transistors (MOSFETs). Despite advancements in plasma processing, the degradation of material properties due to plasma...
The ALICE Collaboration is preparing a major upgrade of the experimental apparatus, planned for installation in the second long LHC shutdown m the years 2019–2020. The key element of the ALICE upgrade is the construction of the new high resolution Inner Tracking System (ITS). It will be made of seven concentric detector layers based on a 50μm thick CMOS pixel sensor with a pixel pitch of 30 × 30 μm...
This paper presents a fully integrated class-A mode Differential Power Amplifier (DPA) on a thin silicon substrate intended for being embedded into flexible electronic foil systems. A high-speed and cost-effective 95 GHz-fmax, 0.25 μm SiGe:C technology (IHP process SGB25V) is used. RF performance of DPA has been evaluated with the pre- and post-thinning measurement results at die level. The behavior...
Ion implantation and plasma etching are essential process steps for manufacturing semiconductor devices. The damage created by those process steps degrades device characteristics and reliability. Therefore, it is necessary to minimize the damage. The damage structure created by ion implantation is reconstructed during an annealing step, and p-n junction is formed as designed in advance. On the other...
We present our experimental results of ultra efficient (up to 2.16 nm/mW) thermally tunable modulators with n-type heaters and the Si substrate removed. To our knowledge, this is the most efficient thermally tunable modulator demonstrated at 1550nm to date. We include results of externally heated modulators with commensurate performance enhancements through substrate removal.
The control of diamond nucleation and the early stages of diamond growth are essential for control of the diamond properties that are sensitive to or directly depend on the film anisotropy, grain size, and microscopic voids in the film. This phenomenon particularly affects the thermal conductivity of thin diamond films. Measuring the thermal conductivity/thermal diffusivity of material like diamond...
The smallest wirelessly powered neural implant to date is demonstrated. Power is sent over a near-field inductive link. The implant system is realized on a single CMOS ASIC which includes the on-chip coil, the harvesting circuit, and the current driver. The entire system is fabricated in a 0.13 μm CMOS process and occupies merely 180 μm × 180 μm.
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