The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Properties of non-freestanding silicon slot photonic crystal cavities for application to sensing are investigated by probing their resonance wavelength tuning as a function of covering material index. Sensitivities of 225 nm/RIU are obtained with Q around 30,000 and cavity mode volumes ∼ V=0.03(λ/n)3
We demonstrate low-voltage germanium waveguide avalanche photodetectors (APD) with gain-bandwidth product of 88GHz. A 7.1dB sensitivity improvement is demonstrated for an APD wire-bonded to a 10Gb/s CMOS transimpedance amplifier, at −6.2V APD bias.
Differential Si ring optical resonator sensors have been fabricated. Detection sensitivity was 10−2% for sucrose solution. This corresponds to 1.05×10−9 g/ml for prostate specific antigen and is almost in the level of practical use.
Tunable graphene/Si heterostructure Schottky diode H2 sensor with two different metal (Pd and Pt) functionalization has been demonstrated. In reverse bias, the molecular adsorption induced Schottky barrier height change causes the heterojunction current to vary exponentially which results in more than an order of higher sensitivity of the chemi-diode sensor compared to the graphene chemiresistor sensor...
The dependence of nanowire width on the stiction-free structure and the influence of stiction on the electrical performance in the suspended nanowire (NW-SUS) ion-sensitive field-effect transistors (ISFETs) are investigated. The NW-SUS ISFETs without stiction are successfully fabricated using advanced microfabrication technology. The stiction-free NW-SUS ISFETs exhibit excellent electrical characteristics...
In this paper, a method to extract the signal-to-noise ratio (SNR) is proposed for the Si nanowire (Si-NW) biologically-active field-effect transistors (BioFETs). We have fabricated the devices using CMOS compatible process and demonstrated specific alpha fetoprotein (AFP) detection using the monoclonal antibody of AFP. The low-frequency noise was measured to calculate the parameter. Using our method,...
In this paper, a critical-path aware power consumption optimization (CAPCOM) using mixed-VTH cells for low-power SOC designs is presented. Using the critical-path weighted sensitivity as an index for assigning each cell to LVT, HVT or MVT, the CAPCOM provides an effective power saving for a low-volt/ low-power SOC design, as indicated in a 16-bit multiplier circuit with 3811 logic cells using a 90nm...
We have improved magnetic field sensitivities of poly-Si Hall devices by applying high voltages. We achieved the magnetic field sensitivity of 5.13 V/T by applying 580 V. This value is 1000 times higher than the previous magnetic field sensitivity.
Microfabricated in-plane bulk acoustic resonators can be configured as gravimetric sensors wherein the mass of surface-bound species is transduced as a shift in the resonant frequency. Using this principle, we examine the adsorption of spherical polystyrene latex particles on the resonator surface by drying particulate laden droplets. Distribution of particles on the surface is governed by the coffee-ring...
In this paper we present a study on an ultra-low noise cavity-stabilized-laser developed at the laboratory. The project aims to realize an ultra-stable cavity with a flicker frequency noise floor expected to be at ∼ 4×10−17. This level of frequency noise can be achieved by making the cavity from a high mechanical quality factor material: single crystal silicon. The cavity needs to be cooled down to...
It can be difficult to compare the merits of cameras using different sensor technologies using only the specifications typically provided by the manufacturers. The Noise Equivalent Irradiance (NEI) provides a normalized and unique parameter allowing a direct comparison. It is also fairly simple to calculate from the commercial specifications for a given wavelength and exposure time of interest. We...
The introduction of 3D devices and new materials at sub 28 nm nodes presents challenges for within-wafer and wafer-to-wafer CMP thickness uniformity control that are critical for device yield and performance. Upon CMP the typical thin film uniformity across the whole wafer is unable to meet the target of less than 2 nm 3σ variation. Furthermore, wafer-to-wafer uniformity variation requires a wafer...
The sensitivity of a piezoresistive sensor holds great importance in case of bio-medical applications. In this paper, we will discuss about how to enhance the sensitivity of a cantilever based piezoresistive sensor. The methodology behind this enhancement is creating Stress Concentration Region (SCR) on the beam. These SCR's are created by introducing defects on the beam. As the Stress Concentrated...
In this paper, we demonstrate that high voltage NMOS is very sensitive to LDD implant process conditions. With the same implant energy and dose, high voltage NMOS channel punch through BVDSS tail is strongly toggled by critical implant process parameters such as beam current and beam size. Lower beam current density reduces both implant damage and beam angular divergence. As a result, LDD lateral...
A NEMS piezoresistive pressure sensor with annular grooves on the circular diaphragm is presented here. Silicon Nanowires (SiNWs) are embedded as sensing elements at the edge of the diaphragm. This new diaphragm structure improves the device sensitivity by 2.5 times under a low pressure range of 0∼120 mmHg with respect to our previously reported flat diaphragm pressure sensor. With the advantage of...
This paper reports a micro-gravity MEMS sandwich capacitive accelerometer with symmetrical double-sided folded beam-mass structure. The beam-mass structure is fabricated from a single double-device-layer SOI wafer (D-SOI). The fabrication process produced proof mass with though wafer thickness (860μm) to enable formation of a larger proof mass. The suspension system of eight folded beams with highly...
The paper presents a piezoresistive absolute micro-pressure sensor for altimetry. This investigation includes the design, fabrication and testing of the sensor. An improved structure is studied through incorporating sensitive beams into the bossed-diaphragm structure. By analyzing the stress distribution of sensitive elements using finite element method (FEM), the configuration shows an enhanced sensitivity...
This paper presents a model of the electrical transport in MIS structure of metal — thin nanoporous silicon-p-Si. The obtained analytical expressions allow analyzing the contribution of the porous silicon and surface electronic states to the electrical behavior of the structure at gas adsorption. The parameters of surface electronic states for different porous silicon thickness are obtained from analysis...
This paper presents a resonant pressure sensor based on SOI wafer technology. In this device, pressure under measurement causes a deflection of a pressure-sensitive silicon square diaphragm, which is further translated to stress build up in “H” type doubly-clamped micro resonant beams, leading to resonant frequency shift. In device fabrication, through-glass vias and silicon-to-glass anodic bonding...
The work highlights the potential benefits of operating Junctionless (JL) Double Gate (DG) MOSFETs in the volume accumulation mode. An optimized 20 nm JL MOSFET in volume accumulation achieves impressive intrinsic delay value of 9 ps and on-off current ratio of ∼106 at a gate and drain bias of 0.4 V (subthreshold region). These values are significantly better than traditional JL MOSFETs designed with...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.