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We report deep reactive ion etching of silicon gratings via cryogenic and Bosch processes. An aspect ratio of > 50 is achieved for 400 nm period gratings with both processes.
Fan-out wafer level packaging (FO-WLP) technology has been developed to shrink package size, to accommodate increasing I/O densities and to provide better electrical performance. However, wafer warpage induced during the process poses a threat to the yielding and reliability. In this paper, the warpage evolution during the FO-WLP process was investigated by theoretical calculation and finite element...
Spectral variation behavior for many grating couplers is experimentally investigated. It was found that the coupling wavelength is shifted by fabrication deviations in grating structure, and grating depth variation in 300-mm wafer processes is precisely derived by numerical analysis for coupling wavelength variation.
Post-fabrication trimming of a silicon micro-ring resonator is demonstrated using an electrically mediated process. The resonance of a fully fabricated ring is permanently blue-shifted by 240pm after diffusion from local reservoirs of boron dopant. Thermal energy is supplied by an integrated heater.
Cu surface oxide prevents Cu-Cu low temperature bonding and raises contact resistance on bonding interface. Therefore, in this study, formic acid gas was used to treat Cu surface oxide for low temperature bonding and decreasing contact resistance. A pair of new electrode samples were designed and fabricated for contact resistance measurement. It includes many small electrodes located on the whole...
Vacuum micro/nano electronic devices possess merits of radiation hardness, temperature tolerance, high working frequency and output power. It's regarded as the promising candidates for the application on ultra-high speed transistor [1, 2], portable and fast-switch X-ray source [3], free electron laser [4], field emission display [5] and so on. In the developing of modern vacuum electronic, to achieve...
We present the design and fabrication of surface normal photonic crystal high Q Si3N4 filter on quartz and high performance SÌ3N4 suspended reflectors at near infrared. We report a Si3N4 filter on quartz with a quality factor of over 27000. We also report a 99% peak reflection from fabricated Si3N4 reflectors with reflection band of 20 nm.
In this study, individually ballasted carbon nanotube (CNT) field emitter arrays (FEAs) using a doped silicon ballast resistor are designed and fabricated. Each CNT field emitter is in series with an n-type doped silicon resistor with 10μm in length, a doping concentration of 1014 cm−3 and a cross section area of 1 μm2 to limit FE current from a single emitter no more than 1.2 μΑ. A systematic study...
This paper reports on a minimal growth factor and clinical translation friendly methodology using micromachined penetrating nanoelectrodes to differentiate Adipose Derived Stem Cells (ADSCs) into neuronal lineage. Electrical stimulus is delivered via penetrating nanoelectrodes to differentiate ADSCs toward neuronal lineage with minimal use of conventional growth factors, genetic manipulators, cytokines...
(We describe the fabrication, characterization and operation of a microfabricated, overhanging micromachined SU-8 device that can stretch and compress individual cells. This compliant device is composed of folded beams with a single actuation point. Upon actuation with a glass micropipette attached to an XYZ positioner, it can apply varying deformation to multiple cells simultaneously. The applied...
This paper describes the design, fabrication and characterization of an in-plane positioning system within a thick (16 micrometers) silicon dioxide photonic-material stack. This is part of a proposed novel photonic alignment scheme, targeting at highly-automated assembly and high-precision alignment of multi-port photonic chips. Creating such functionality in thick silicon dioxide is challenging because...
We present a compact slot waveguide Y-junction that enables the implementation of complex devices for switching, modulation, and sensing. The proposed structure can efficiently interface strip and slot waveguides without requiring an adiabatic transition region.
Plasmonics for the mid-infrared wavelength regime offers unique applications such as molecular vibrational absorption spectroscopy for bio-sensing [1]. The quest for novel materials and structures has been continuing in the last decade [2]. Meanwhile, the fabrication of plasmonic metamaterial structures with large area in a reproducible manner is a tremendous challenge. In this report we show that...
We developed a microelectromechanical system to controllably fracture overhanging silicon micro-beams, in an attempt to fabricate conformal electrode pairs. Controlled fracture by applying tensile force in the <111> crystal direction produces flat, and very low roughness fracture surfaces, which are then utilized as conformal electrodes for inducing large area tunneling emission of electrons...
We report the first monolithic integration of InGaAs channel transistors with lasers on a Si substrate, achieving a milestone in the direction of enabling low power and high speed opto-electronic integrated circuits (OEICs). The III-V layers for realizing transistors and lasers were grown epitaxially on the Si substrate using MBE. InGaAs n-FETs with Ion/Ioff ratio of more than 106 and very low off-state...
Field-effect transistors (FETs) are commonly used as affinity-based electrical transducers, known as bioFETs. These sensors are, however, unable to directly detect uncharged molecules such as glucose, necessitating the use of ligand molecules. Further, the change of the electrical signal resulting from the biochemical reactions is often small. In the past decade, significant research was done to enhance...
An aluminum microwire was locally anodized to form a nanowire with triangular cross section. Nanostructure formed through local anodization depended strongly on a cross sectional shape of a microwire before anodization. The width of the nanowire was controlled by the ratio of voltage between edges of locally anodized area to anodization current. This indicates that local anodization has the potential...
We demonstrate, for the first time, the 3D Monolithic (3DM) integration of In0.53GaAs nFETs on FDSOI Si CMOS featuring short-channel Replacement Metal Gate (RMG) InGaAs n-FinFETs on the top layer and Gate-First Si CMOS on the bottom layer with TiN/W inter-layer contacts. State-of-the-art device integration is achieved with the top layer InGaAs utilizing raised source drain (RSD) and the bottom layer...
Inorganic nanomaterials such as nanowires (NWs) and nanotubes (NTs) are explored for future flexible electronics applications due to their attributes such as high aspect ratio, enhanced surface-to-volume ratio, prominent mobility and ability to integrate on non-conventional substrates. Device performance of semiconducting NWs are demonstrated to be superior compared to the organic counterparts. Among...
In this work, the development of engineered silicon substrates for a novel via-middle TSV integration concept is demonstrated. These substrates include 3D buried etch-stop layers which provide both an ideal vertical and lateral etch-stop for TSV trench etching thus enabling the simultaneous realization of different size of TSVs on the same silicon substrate. Beside standard BiCMOS and TSV fabrication...
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