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The polycrystalline silicon (poly-Si) gate-all-around (GAA) nanowire transistors with 10nm scale width were fabricated under precise width control. The nanowire width is 10nm scale. Measured characteristics show smaller threshold voltage and drain current variability than that of previously reported poly-Si nanowire transistors.
Critical values of mobile charge in intergate thermal oxide of the transfer transistor of photodetector's matrix and parameters of heterogeneous of polysilicon gate are calculated as part of ionic relaxation model of transport of alkali metals' mobile charges Na+ and K+. The model takes into the account the influence of the mobile charges' the electric field of electrets on heterogeneity on the surface...
Intelligent connected sensor and actuator endpoint nodes enable the Internet-of-Things (IoT). A brief overview of endpoint node functional blocks and requirements for low-power consumption are discussed. VLSI technology enablers for IoT include Ultra low Power (ULP) and Ultra Low Leakage (ULL) semiconductor process platform extensions. ULP and ULL implementations for bulk silicon technologies are...
We investigate the mechanism of interfacial layer formation on Si1−xGex (0 < x < 0.5) channel and its correlation to hole mobility. It is found that the mobility degradation in low-Ge-content Si1−xGex (x < 0.2) pFETs is attributed to a Ge-rich top surface in the channel directly induced by interfacial layer formation. In addition, the depth profile of a Si-rich top surface in high-Ge-content...
A technique to fabricate a vacuum cold-cathode nanoelectronic diode with a remarkably low 2-V turn-on voltage was recently presented. A three-terminal device based on the same technology is here designed and fabricated, to implement a vacuum nano-triode. The attempt was partially successful as the excessively large gate radius does not allow effective current control. Nonetheless, the obtained experimental...
In this study, we demonstrated an isolated-type flyback converter circuit for high-frequency operations. We estimated the high-frequency characteristics of passive devices in various conditions of a DC-DC converter circuit. We experimentally developed the isolated-type flyback converter circuit and evaluated the frequency response properties. In order to verify the fast-switching operation, the input...
In this paper, we show a possibility of Si resonant plasma-wave transistor (R-PWT) as THz detector. Κ the channel mobility of strained Si R-PWT is 400 cm·V−1·s1, R-PWT can be operated as THz detector when channel length l= 21–28 nm.
Scaling of silicon MOSFETs has been predicted to go around 10 nm and below. For such a small transistor a gate-all-around nanowire is regarded as an ideal geometry to maintain gate control. On the other hand, such downsizing and excellent gate control has provided opportunities to control individual electrons one by one by placing gates on top of the nanowire to define charge islands and potential...
The effect of traps in the hetero-junction and at the oxide interface on slope and ON-current of vertical and lateral InAs/Si Nanowire (NW) Tunnel FETs (TFETs) is demonstrated through physics-based TCAD analyses in combination with experimental findings. The high density of interface states (Dit) at the highly lattice-mismatched material interface degrades the sub-threshold swing (SS) and makes band-to-band...
For the first time, WS2-based transistors have been successfully integrated in a 300 mm pilot line using production tools. The 2D material was deposited using either area selective chemical vapor deposition (CVD) or Atomic Layer Deposition (ALD). No material transfer was required. The major integration challenges are the limited adhesion and the fragility of the few-monolayer 2D material. These issues...
We present some recent progress towards the implementation of the basic building blocks of quantum information processing derived from a Si CMOS technology platform. In our approach, characterized by an emphasis on foundry compatibility in terms of processes and materials, the so-called qubits are encoded in the spin degree of freedom of gate-confined elementary charges. After introducing various...
We experimentally demonstrated that the inclusion of Ge dots into the gate stack of a Si MOSFET provides extremely high photoresponsivity over 1,000A/W and superior photoresponse linearity of at least 7 decades for 400–1300nm illumination, depending on whether the Ge-dot photoMOSFET operates in the inversion or accumulation modes. Remarkably a very large photocurrent gain of 103–108A/A and a significantly...
In this paper, we will review the current challenges and advancements to continue standard device scaling beyond the 5nm technology node. Apart from the introduction of new materials and device concepts, we will also address the trend towards more heterogeneous systems requiring close interaction between the technology and system optimization.
We previously described a deep network system that reached an accuracy of 82% on a digit recognition task using the spike outputs from a Dynamic Audio Sensor (DAS) in response to audio samples from the TIDIGITS database. The audio samples were played directly to the system therefore bypassing the microphones. This work presents an interactive real-time demonstration of this digit recognition system...
In this paper, a closed-form physics-based surface potential approach is proposed to derive a compact model for current in high-frequency and high-power LDMOS transistors. For this purpose, we have modeled the drift region with three variable resistors. Effects of velocity saturation in the channel as well as the quasi-saturation due to the existence of the N-Drift region have been taken into account...
This paper gives an overview of several approaches utilizing new parameters and effects, which may be useful for improving the calibration and functionality of nanowire (NW) field-effect transistor (FET) biosensors. We discuss the basic principles of high-speed low-noise Si NW FETs for biosensor applications. We explain the results of a capacitance coupling effect as a consequence of liquid-gate and...
The paper introduces a new reusable asynchronous component, called WAITX element, that arbitrates between two requests. In contrast to the traditional mutex, the requests are not required to be persistent, i.e. can be withdrawn at any moment, have hazards or even have high-frequency bursts, e.g. they can be outputs of voltage comparators. It is guaranteed that (i) hazards will never propagate past...
Due to scaling of traditional MOS devices into nanometer range, the constraints like power and performance restrict its lastingness in future circuit design. The trigate FinFET has emanated as propitious device for better electrostatic characteristics in terms of Short Channel Effects (SCEs) etc. In this work, the design and analysis of 5-fin SOI FinFET at 20nm technology has been done using 3 Dimensional...
An experimental method was introduced for understanding the exact relationships among polarization, coercive field, and electric field across the ferroelectric layer. They characterized the ferroelectric properties closed inside the metal/ferroelectric/insulator/semiconductor gate stacks. Using the method, we found that N2-dominant-gas annealing process was effective for improving the ferroelectricity...
In this paper, we investigated a new device, Hetero-junctionless (H-JL) Double Gate Tunnel Field Effect Transistors (DGTFET) with high-k. III-V semiconductor material (like InAsSi) gives excellent performance when InAs uses at source side, because of low band gap it reduces the potential barrier height of source-channel interface causing maximum carriers are fastly tunneled across the source to drain...
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