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We report the fabrication of polycrystalline silicon piezoresistive cantilevers with submicron width and thickness for static force measurements, using electron beam lithography (EBL) and silicon micromachining. For cantilevers with length of 150 µm, leg width of 500 nm and thickness of 320 nm, a force sensitivity of 97 µV/pN and a resolution of 30 pN have been obtained. Bigger cantilevers (leg width...
In this paper we use an electro-thermal method [solver of the heat-flux equation coupled with an ensemble Monte Carlo (MC) simulator] to extract the value of the thermal resistance, Rth, in diodes consisting in un-gated Al0.27Ga0.73N/GaN heterostructures. Different substrates (polycrystalline diamond - PCD, diamond, silicon and sapphire), and die dimensions will be analysed. When a temperature-independent...
Nanostructured porous silicon is very promising for RF applications by overcoming the high-frequency losses originating from the bulk silicon substrate. RF performance and non-linearity analysis of different silicon substrates including, porous (PSi), trap-rich (TR) high resistivity (HR) types are explored experimentally. The investigation is done by means of coplanar transmission lines (CPW) fabricated...
We have used the classical Hall Effect to electrically characterize indium tin oxide (ITO) films grown by two different techniques on silica substrates. ITO films have the unique property that they can be both electrically conducting (and to be used for a gate electrode for example) as well as optically transparent (at least in the visible part of the spectrum). In the near infrared (NIR) the transmission...
3D ICs involve interconnected ICs as they contact each other by means of through-silicon-vias (TSVs). Although it is a cheap process and suitable to mass production, the conventional sputtering method has not been widely used to fabricate high aspect ratio vias due to its more or less rectilinear propagation property. In this study, the effect of sputtering conditions on the growth mechanism of seed...
Graphene on silicon with silicon dioxide quantum dots is a promising opto-electronic material. The optical band gap and the corresponding optical conductivity are estimated using the density functional approach with the combination of molecular dynamics. The regular repeating unit cell of graphene silicon nano-texture is identified using the classical molecular dynamics simulations. Electronic calculations...
3D technologies provide promising solutions to meet the needs of today's high performance and high speed ICs. Therefore, a methodology is required to model, predict, and optimize the 3D interconnect performance. This paper focuses on modeling of the performance of 3D interconnect test structures, realized on Si substrates, both in the time frequency domains. In particular, the impact of the Si substrate...
3D technology is envisioned to offer advanced integration capabilities, enabling heterogeneous system integration and offering improved performance and reduced power consumption thanks the so-called Through Silicon Vias (TSVs). Nevertheless, 3D integration is facing strong thermal issues due to its higher power density and reduced heat dissipation properties. In previous studies, it has been often...
Negative resistivity of Si and Si0.9Ge0.1 DDR IMPATT diode are numerically computed using double iterative method and modified Runge-Kutta method and results are compared for identical input parameters. Simulation is based on simultaneous solution of Poisson's equation, continuity equation and carrier diffusion equation in addition with the effect of mobile space charge subject to the appropriate...
Graphene, with its distinctive and outstanding optoelectronic properties, has prompted its use in a wide variety of applications such as transparent conductive electrodes and modulators. Recently, due to advances in graphene synthesis methods, large-area graphene field effect transistors (GFET) have displayed unique modulation of terahertz waves. By transferring chemical vapor deposited graphene films...
The resistivity, Hall coefficient, Hall mobility, and Hall concentration in undoped semi-insulating GaAs samples irradiated by 5 MeV electrons of various cumulative doses ranging from 1kGy to 24 kGy and different dose rate were measured and analysed at the temperature 400 K and 300 K. The resistivity and the electron Hall concentration decrease while Hall coefficient and the electron Hall mobility...
Graphene, with its distinctive and outstanding optoelectronic properties, has prompted its use in a wide variety of applications such as transparent conductive electrodes and modulators. Recently, due to advances in graphene synthesis methods, large-area graphene field effect transistors (GFET) have displayed unique modulation of terahertz waves. By transferring chemical vapor deposited graphene films...
A low-cost and low-loss Silicon-on-Insulator (SOI) integrated platform is proposed for millimeter-wave (mm-wave) applications. The proposed platform supports mm-wave components in the D-band using dielectric image guide structure. The SOI mm-wave integrated platform uses high resistivity Silicon wafers for very low-loss in the D-Band. All passive components can be fabricated on the same platform with...
The miniature cold field emitters are very attractive for utilization in low-power gyrotrons operating in range of short millimeter and terahertz waves. But such emitters are usually nondurable when exploiting in technical vacuum. Multi-tip field emitters with protective coatings developed and investigated by the authors are promising for use in short-wave gyrotrons operating in a technical vacuum.
We studied the carrier multiplication efficiency in bulk silicon using optical-pump/THz-probe spectroscopy. By the close analysis of the time resolved data, we observed the enhancement of the quantum efficiency due to carrier multiplication for incident photon energy above 4.1 eV. It agrees well with the results of photo current measurements. We believe that the present results enable us to correlate...
We present a numerical simulation of frequency-agile terahertz metamaterials which incorporate semiconducting material as an integral part of the resonant elements to split ring resonator (SSR). The resonance frequency of the metamaterial can be dynamical tune through photoexcitation. The modification of capacitance at the split gap by photoexcitation results in red-shifting of metamaterial resonance...
Thermal conductivities of different interconnect sections of power MOSFETs were numerically determined using the Stationary Thermal Analysis mode of the ANSYS software. From the numerical solution, the thermal conductivities in the directions of the coordinate axes were calculated from the specified temperature difference on the opposite faces of the simulation box and the thermal flux through these...
We present an extension of the method for thermal characterisation named “Raman Thermometry” that relaxes the assumption of boundary conditions by spatially resolving the thermal field. The technique is contact-less and suitable to study nanoscale systems unattainable to other by other more invasive thermal characterisation techniques.
Trends in power semiconductor devices are towards high integration and high performance, which impose ever increasing demands on their energy capability. The purpose of this paper is to demonstrate possibilities for optimization of the energy capability by considering the stack of layers in the power device and system for automotive applications. We classify the operation profiles into 3 categories:...
A tri-cavity Chebyshev bandpass filter based on high resistivity silicon is proposed and manufactured at Ku-band. MEMS etching process is utilized to etch via-holes array on high resistivity silicon. A fabricated tri-cavity Chebyshev bandpass filter after being packaged exhibits an insertion loss of 3.7 dB with a 6.8% relative bandwidth at a center frequency of 16 GHz and the return loss is better...
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