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Characterization of interposer in a 2.5-D stacked IC is essential for yield learning and design optimization. To examine the effect of design parameters of the interposer structure on different substrate materials, the S11 and S21 curves for various substrate materials are obtained from the full-wave simulation. With the simulation results, it is observed that polyimide and glass interposer shows...
In this paper, a theoretical simulation model of bifacial Si solar cell using personal computer one dimensional (PC1D) program is reported. The impact of electrical and optical parameters on the device performance is thoroughly investigated. Emitter doping, bulk resistivity, back surface field (BSF) and antireflection coating (ARC) layers on front and rear of the cell were fine tuned to obtain efficiency...
In this paper, the Lateral Positive-Intrinsic-Negative (LPIN) diode and its application in the high efficiency silicon-based plasma antenna are introduced. A LPIN diode can be employed as a plasma island when sufficient DC power is supplied, which can be used for reconfigurable antennas. The conductivity of intrinsic layer is simulated using the finite element method (FEM). The frequency reconfigurable...
Record-low contact resistivity (pc) for n-Si, down to 1.5×10−9 Q-cm2, is achieved on Si:P epitaxial layer. We confirm that Ti silicidation reduces the pc for n-Si, while an additional Ge pre-amorphization implantation (PAI) before Ti silicidation further extends the pc reduction. In situ doped Si:P with P concentration of 2×1021 cm−3 is used as the substrate, and dynamic surface anneal (DSA) boosts...
Carbon nanotubes (CNT) are an attractive alternative filler material for through silicon vias (TSV) due to their high aspect ratio, attractive mechanical and thermal properties and high current carrying capability. Theoretically they can outperform Cu in terms of via resistance. Until now all CNT TSV reported in the literature were fabricated using electrically isolating catalyst support layers. In...
In this paper, a study is conducted into using semiconductor materials in designing nanoantennas for solar energy harvesting. Different thin wire dipole nanoantennas made of carbon, heavily doped Ge and heavily doped Si are designed and their performance is compared with metal nanoantenna made of gold. Method of moments (MoM) is employed to numerically solve Hallen's integral equation in order to...
A series of 3D EM simulation models are presented in order to determine the effect that conductivity profile, passivation layer and connection method have on the transmission performance of a photoconductive microwave switch. The use of 3D EM simulation can help quantify the benefit and impact of different approaches before the manufacture stage. The aim is to find methods to reduce insertion loss...
In this work we study the influence of hydrogen dilution on morphological properties and electronic of SiGe:H films. Surface morphology measured by Atomic Force Microscopy (AFM) technique and temperature dependence of conductivity, together with conductivity measurements in dark and under AM1.5 illumination at room temperature were used for characterization. Dark conductivity and Fermi energy varied...
Using first principles Density Functional Theory (DFT) calculations, we have studied the structural and lattice vibrational properties of [111]-oriented Si/Ge core-shell nanowires. Our results show that the fundamental atomicity of the underlying lattice is important for an accurate explanation of phonon frequencies. The detailed analysis shows that thermal conductance due to selective phonon modes...
Helium-3 ion irradiation technique is proposed to improve silicon substrate noise isolation by creating a local semi-insulated region with a resistivity over 1kΩ-cm in low-resistive silicon substrate. Noise isolation is improved about 10dB at 2GHz after helium-3 ion irradiation in a 180-nm CMOS process. A 90% noise reduction has been achieved in the measurement results for test structures with guard...
This paper presents a thorough investigation of the longitudinal gauge factor (GF) at high doping level in columnar polycrystalline-Silicon (poly-Si) nanowire (NW) NEMS devices. It is shown that a high GF (more than 30) can be obtained with concentration about 1020 cm−3. This result is very promising for high volume, low fabrication cost NEMS devices. This high GF is due to the specific piezoresistive...
We have theoretically investigated the specific contact resistivity of n-type Si and Ge metal-insulator-semiconductor contacts with various insulating oxides. We have found a significant reduction of the contact resistivity for both Si and Ge with an insertion of insulators at low and moderate donor doping levels. However, at the higher doping levels (>1020 cmu−3), the reduction of the contact...
This work investigates the heat transfer between scanning thermal microscopy (SThM) probes and samples. It presents a detailed study of the heat transfer mechanisms that operate between the probe and the sample. Two SThM resistive probes of different sizes were used in active mode. Depending on the experimental conditions, the heat transferred to the sample through water meniscus, solid-solid contact...
3D stacking of microprocessors is an idea that promises to continue the accomplishment of high performance processors while allowing the increment of transistors density inside a given area. However, 3D stacking inevitably increases the power density and, therefore, thermal issues related to this idea must be overcome first in order to make use of all the advantages of 3D processors. In literature,...
We present a Monte Carlo simulation tool to address phonon transport in silicon and silica by solving the Boltzmann Transport Equation. This tool aims to provide useful data for thermal microscopy at nanoscale where samples and tips may be of various size and shape. It enables also to predict the effect of an oxide layer or interface between similar materials. Especially, we compute the thermal conductance...
In three-dimensional integrated circuits (3DICs) aggressive wafer-thinning can lead to large thermal gradient, including spikes in individual device temperatures. In a non-thinned circuit the large bulk silicon wafer on which devices are built works as a very good thermal conductor, enabling heat to diffuse laterally. In this paper we experimentally examine the thermal resistance from an active heater...
We observed the nonlinear electron dynamics in polycrystalline gold (Au) thin films via intense terahertz spectroscopy. Under the intense terahertz wave illumination, the transmittance of Au thin film decreases, indicating that the damping constant of electrons becomes smaller due to the suppression of the grain-boundary effect on electrons induced by the intense terahertz field.
The Seebeck coefficient is a parameter to measure the efficiency of materials in generating thermoelectric voltage from certain temperature gradient. In this work, the effect of aluminum nano particle on the Seebeck coefficient for silicon based thermoelectric power generator is investigated. Thermoelectric devices which consist of arrays of doped phosphorus and boron channels have been fabricated...
This paper presents an optimization-based technique to develop silicon substrate for accurate and efficient electromagnetic (EM) simulations. The proposed method simplifies the highly nonlinear substrate doping profile into a few regions with effective conductivities. The accuracy of the optimized substrate is validated against measurement data for two spiral inductors. This simplified substrate enables...
In this paper, the CNT TSVs, as well as Cu/CNT composite TSVs, are investigated based on the equivalent circuit model. The effective complex conductivity, which incorporates the kinetic inductive effect of CNTs, has been employed for high-frequency characterization. The performance comparison between Cu, CNT, and Cu/CNT composite TSVs are carried out. It is found that Cu/CNT composite TSVs can be...
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