The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The U.S. Department of Energy's Advanced Research Project Agency for Energy (ARPA-E) was established in 2009 to fund creative, out-of-the-box, transformational energy technologies that are too early for private-sector investment, at make-or break points in their technology development cycle. Development of advanced power electronics with unprecedented functionality, efficiency, reliability, and reduced...
Three GaN-based buck switching power stage architectures are implemented using discrete GaN High Electron Mobility (HEMTs) devices and compared with respect to efficiency, switching speed (2 to 10MHz), and power conversion ratio for medium-power applications. The three presented power stage architectures are: a single-stage buck, a multi-phase buck with 2 phases, and a stacked interleaved configuration...
This paper presents the project procedure to develop a Half-Bridge (HB) Non-Isolated DC-DC converter applying a Normally-On GaN-based switch. Normally-on devices (D-mode) present the benefit of lower costs in terms of production if compared with E-mode devices, which gives an economic motivation to study and develop power electronics converters applying this technology. The devices under test (DUTs)...
The superior electrical and thermal properties of silicon carbide (SiC), when compared to silicon (Si), has lead to it being used in power converter designs that require high efficiency and low volume. However while choosing the semi-conductor material for these high performance designs is relatively simple, the specific type of SiC device (e.g. JFET, MOSFET or BJT) is not so straight-forward. This...
Power switch devices which base on wide band-gap (WBG) semiconductor, such as silicon carbide metal-oxide-semiconductor-field-effect-transistor (SiC MOSFET) and gallium nitride high-electron-mobility transistor (GaN-HEMT) perform superior performance as compared with silicon (Si) MOSFET in high switching frequency, high blocking voltage, and high temperature operation. In this paper, a series of characteristic...
Wide-bandgap (WBG) devices are believed as the alternate of silicon switches for high-efficiency and high-power-density power electronics converters. While two major challenges of WBG devices remain as high cost (∼5 times of Si) and less options (the maximum power rating for GaN is only 650V/60A), paralleling GaN with Si could be the potential solution to solve pains above. In this paper, two SMT...
In this paper, key aspects of silicon-carbide (SiC)-based automotive traction drives are reviewed. Firstly, the required supporting factors to achieve optimal operating conditions and best performance are described. Major component sizing methodologies and constraints are included. Expectations on gate threshold voltage, trans-conductance, and transient oscillation are discussed. Tolerance against...
The U.S. Army Research Laboratory (ARL) and Wolfspeed developed silicon carbide (SiC) vertical MOSFETs for linear-mode operation. The motivation is to determine whether SiC's material properties enable SiC MOSFETs to withstand higher pulse-current density and energy dissipation than is achievable with commercial silicon linear-mode MOSFETs. The SiC device is a 3.3 mm × 3.3 mm chip with a thick gate...
Homomorphic Encryption (HE) is a new cryptographic topic that allows untrusted parties to compute over encrypted data. This new encryption scheme is very famous in a cloud scenario, because it leverages cryptographic techniques in the cloud by allowing it to store encrypted data, and to process encrypted query over it. In this paper, we consider two important HE schemes: Dijk-Gentry-Halevi-Vaikutanathan...
In this work, we provide early insight into the combined tradespace for both power switching and RF applications afforded by the high critical, electric-field strength of β-Ga2O3. MOSFETs formed by homoepitaxial growth of β-Ga2O3 films doped with Sn, Si, and Ge on bulk substrates have been characterized electrically. Several key milestones have been achieved such as enhancement-mode operation >...
Wide bandgap (WBG) semiconductors exhibit superior material properties, enabling power devices to operate at higher blocking voltages, switching frequencies, and junction temperatures. Power converters featuring WBG devices have higher power density and are more efficient and reliable than those using existing silicon (Si) devices. This paper presents the design of a non-isolated dc-dc buck-boost...
Conventional silicon (Si) based power devices are commonly used in industrial battery charging applications. In most cases, fast switching operation is desired in such applications in order to have a compact power converter system in terms of size and weight, while in contrast, it drives for large switching losses. The maturity of wide bandgap (WBG) technology provides enormous opportunities to ameliorate...
A hybrid switch configured by silicon insulated gate bipolar transistor (Si IGBT) and silicon carbide metal-oxide semiconductor field effect transistor (SiC MOSFET) have been investigated to be a cost effectiveness and high efficiency. In this paper, we aimed reducing the hybrid switch loss and expanding operation area of frequency and current. We measured dependency on various parameters to analyze...
Power semiconductor devices made with wide-bandgap (WBG) materials such as Silicon Carbide (SiC) are improving the energy conversion efficiency, power density, and switching performance of converters. This paper presents a comparative performance evaluation of Si IGBT, SiC JFET, and SiC MOSFET power devices implemented in an otherwise identical, non-isolated dc-dc boost converter. Switching characteristics...
The performance of a Modular Multilevel Converter (MMC) is presented in this paper, comparing Silicon (Si) and Gallium Nitride (GaN) semiconductors. Moreover, the benefits of high-frequency operation in a MMC topology are analysed along with a power loss distribution evaluation, highlighting the main advantages and drawbacks of different semiconductor technologies.
The integration of software systems running in different healthcare organizations is increasingly required in order exchange data and carrying out healthcare processes in coordinated ways. This integration is usually supported by integration platforms which are based on advanced middleware technologies, like the Enterprise Service Bus (ESB). In addition, data quality in the healthcare area is critical...
Non-volatile 3D FPGA research to date utilizes layer-by-layer stacking of 2D CMOS / RRAM circuits. On the other hand, vertically-composed 3D FPGA that integrates CMOS and RRAM circuits has eluded us, owing to the difficult requirement of highly customized regional doping and material insertion in 3D to build and route complementary p- and n-type transistors as well as resistive switches. In the layer-by-layer...
HTTP adaptive streaming (HAS) has become the de-facto standard for video streaming to ensure continuous multimedia service delivery under irregularly changing network conditions. Many studies already investigated the detrimental impact of various playback characteristics on the Quality of Experience of end users, such as initial loading, stalling or quality variations. However, dedicated studies tackling...
This paper is devoted to robust H∞ sliding mode control (SMC) for a class of uncertain switched singular systems with time-delay (SST). Based on the average dwell time approach, sufficient conditions for the existence of designed linear sliding surface and the admissibility of the underlying sliding mode dynamics (SMDs) with given disturbance attenuation level are presented in terms of LMI, by which...
This paper presents thermal characteristics of rotor-side converter (RSC) in doubly-fed induction generator (DFIG) wind turbines (WTs). A numerical power loss and thermal model simulator has been developed to obtain instantaneous junction temperature of power devices for a wide operating range of RSCs. Thermal performance of four RSC candidates, including Si IGBT based 2L / 3L-NPC / 3L-ANPC RSCs and...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.