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The transfer of energy via radio frequency (RF) is the new solution for prolonging the lifetime of wireless networks. This paper investigates the secrecy performance of RF energy harvesting system that consists of one power transfer station, multiple power-constrained information sources and one destination in the presence of one eavesdropper over Rayleigh fading channels. To do so, the exact closed-form...
Swarming and emergent behaviour techniques can offer simple control schemes for the organisation of many nodes, with little communications overhead and processing time. These mechanisms are robust against node losses, and are able to run on cheap, disposable platforms. For these reasons, we argue that these techniques are well suited to the tactical environment. This paper examines the usefulness...
On-chip spiral inductors suffer from substrate loss and parasitics, also have large footprints. This paper presents three-dimensional (3-D) vertical solenoid inductors by electro deposition technique. Metal ground shield inserted in the oxide layer to terminate electric field to enter inside substrate. Compared to on-chip spiral inductors, capacitive energy loss can be reduced about 60% and power...
A novel approach to technology integration of system-on-chip RF Front-End Module (FEM) is presented. Device design to achieve best-in-class extended drain power mosfet (EDNMOS) with Ron of 1.6Ohm-mm and fT >39GHz is discussed. This is followed by an analysis of a high performance switch device integrated via selective silicon thinning.
A good self-interference (SI) cancellation strategy in full-duplex (FD) communication passes first by a proper understanding of the nature of this SI. In this paper, we investigate the basic causes of SI cancellation bottlenecks in FD. To that end, we first classify the known FD architectures based on where the reference signal is taken to cancel the SI. By combining the effects of transceiver impairment,...
In this paper, we describe an advanced real-time cancellation architecture for efficient digital-domain suppression of self-interference in inband full-duplex devices. The digital canceller takes into account the nonlinear distortion produced by the transmitter power amplifier, and is thereby a robust solution for low-cost implementations. The developed real-time digital canceller implementation is...
Full-duplex wireless is an exciting emerging wireless communication paradigm that also poses tremendous challenges at virtually every layer: from the antenna interface and integrated circuits (ICs) and systems to the network layer. This paper covers recent advances at Columbia University across all these dimensions. Several potential full-duplex system architectures that are appropriate for different...
This paper presents one fabrication process of a triple-layer stacked TSV interposer for switch matrix consisting of eight RF chips. There are about 600 TSVs in the interposer and the diameter of TSV is 40um with the aspect ratio being 4:1. The whole area of the interposer is 13.5 mm × 7.5mm and the thickness of the triple-layer stacked interposer is only about 0.7mm. After the process, the electrical...
Amorphous silicon (a-Si:H) thin-films being an advantageous base for solar cells manufacturing face several disadvantages, such as relatively wide bandgap (1.7… 1.8 eV) and cells degradation effect during prolonged sun exposure (Staebler-Wronski Effect) that lowers the efficiency of the cells compared to, for instance, monocrystalline solar cells. We suggest enhancing the solar cell conversion efficiency...
The power handling performance of a photoconductive microwave switch up to an RF input power of 44dBm (25W) is presented. The switch consists of a lightly doped die of silicon mounted over a gap in a transmission line. A 2GHz signal is applied through the switch and the 1dB compression point is analysed.
In order to improve the tooth profile accuracy, main factors causing tooth error were analyzed by means of numerical simulation. Based on the principle of internal helical gear form grinding, it was known that the tooth error had much to do with the axial-section shape of form grinding wheel and the installation position of grinding wheel relative to the gear to be ground. Firstly, the mathematical...
For enhancing spectrum efficiency, in-band full-duplex technology is one of the candidate technical solution. But, self-interference (SI) signal causes dramatically degrade the performance. In practically, memory effect which cause harmonic in amplifier will be hard to be estimated. Therefore, we utilizes the dynamic regression (DR) to implement digital interference cancellation (DIC) for mitigate...
A RF leakage phenomenon in GaN HEMTs on Si substrates is analyzed with taking atomic diffusion at buffer/substrate interface into consideration, and a novel physical model of RF leakage based on the analysis is proposed. The Al or Ga atoms are moved from buffer layer to Si substrate at an epitaxial growth. Then, an acceptor layer with high hole density and an inversion layer with high electron density...
This paper proposes two fully-integrated cap-less (i. e. without external capacitor) preamplifiers for silicon microphones. Proper dc biasing of the preamplifier is obtained with two solutions to implement a large feedback resistance (in the GO range), based on a switched resistor and a transistor in the off state, respectively. Both solutions have been implemented in a 0.18-μm CMOS technology and...
The evolution of silicon and silicon-germanium pnp transistors is reviewed in this paper. The motivation for SiGe-pnp transistors in Complementary Bipolar (CBi) and CBiCMOS is discussed with a view on device parametric parameters that help gage the usefulness of these devices in analog and RF design. We review the basic process architectures and process building blocks for CBiCMOS. SiGe-pnp versus...
In this paper we demonstrate the potential use of a germanium p-i-n diode, available without additional processing effort in a photonic BiCMOS technology, for electronic applications. A cut-off frequency above 400 GHz was obtained by S-parameter measurements without any certain design optimization of the diode. The device construction on SOI yields in the isolation of the diode from the substrate...
This paper presents two self-interference (SI) cancellation methods using active signal injection (ASI) for full-duplex MIMO-OFDM systems. Specifically, the ASI approach considers adding an appropriate cancelling signal to the transmitted signal to reduce the SI at the receiver input to avoid overloading the receiver low-noise amplifier (LNA) and analog-to-digital converter (ADC) while ensuring proper...
We analyze Defragmentation-as-a-Service (DaaS) in elastic optical networks and show that the positive effect of defragmentation depends on the rate at which it is performed, load (or, call arrival rates) and the available resources.
We demonstrate 10-Gb/s high-on/off-contrast modulation of a carrier-depletion silicon Mach-Zehnder modulator having 3-mm rib-waveguide phase shifter driven with RF 3.6 VPP or lower at temperatures up to 130 °C without thermo-electric cooling.
This paper addresses the self-interference (SI) cancellation in a full-duplex radio transceiver. In particular, we focus on shared-antenna based full-duplex transceivers where the self-interference coupling channel is always frequency-selective and can also be strongly time-varying depending on the antenna matching characteristics and reflections from the surroundings. A novel digitally-controlled...
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