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Dynamic power supply transmitters (DPST), including the techniques of envelope tracking (ET) and direct polar (DP) modulation, have a century of success in some applications. The original motivation was to improve the energy efficiency of the final power amplifier (PA), and that remains true today. These are methods to improve overall energy efficiency across wide signal and tuning bandwidths. Not...
SiGe HBT technology has enjoyed substantial success over the past 25 years for use in realizing performance-constrained, highly-integrated mixed-signal electronics spanning the range of DC to sub-mm-wave operational frequencies. This success has been bolstered by advances in device scaling which have been truly impressive, now routinely achieving multi-hundred GHz frequencies, a fact which is currently...
Through aggressive lithographical and epitaxial scaling, the bandwidths of InP-based heterojunction bipolar transistors have been extended to THz frequencies. At 130nm emitter dimensions, transistors with maximum frequencies of oscillation (ƒmax) of >1THz have been demonstrated with accompanying circuit demonstrations at 670GHz. At 250nm emitter dimensions, high efficiency and high power density...
Known to the power industry, there is an increasing functional safety need to isolate delicate control systems from the violent world of the Insulated Gate Bipolar Transistor (IGBT), which has resulted in a growing demand for Digital Isolators. This is where the gate control signal for the IGBT can be coupled across a dielectric barrier, while the barrier itself is capable of withstanding high working...
In this paper we will discuss the challenges of circuit design for high-speed and high-volume optical interconnect and how SiGe BiCMOS technologies are best suited to address these challenges. Advantages of SiGe BiCMOS are illustrated through examples of design requirements from optical front-ends (transimpedance amplifier (TIA) and modulator and laser driver) to clock and data recovery (CDR) and...
The implementation of a “superjunction” collector design in a silicon-germanium heterojunction bipolar transistor is explored for enhancing breakdown performance. The superjunction collector is formed through the placement of a series of alternating pn-junction layers in the collector-base space charge region to modify the carrier energy profile and reduce avalanche generation. An overview of the...
This paper presents the design and electrical characterization of a transimpedance amplifier (TIA) implemented in a complementary 0.25 µm SiGe:C BiCMOS technology which offers a fT/fmax of 110 GHz/180 GHz for the npn and 95 GHz/140 GHz for the pnp transistor, respectively. Featuring folded cascode architecture by making use of the available pnp HBTs, the amplifier exhibits a differential transimpedance...
In this paper we present an improved self-consistent iterative model for thermal resistance in SiGe HBTs. The proposed model evaluates both the upward and downward heat dissipation from the heat source located at the base-collector junction. Along with the temperature dependency, thermal conductivity degradation due to heavy doping and Ge composition in the base region is included in the proposed...
This paper presents a novel Fully Self-Aligned (FSA) Si/SiGe HBT architecture using Selective Epitaxial Growth (SEG) and featuring an Epitaxial eXtrinsic Base Isolated from the Collector (EXBIC). The one is integrated into the bulk area of the 28-nm FD-SOI CMOS technology developed at STMicroelectronics. All the parameters of the architecture such as the boron-doped base link, the emitter width and...
This paper presents a flip-chip packaged 76- to 81-GHz transceiver chip implemented in SiGe BiCMOS technology for both long-range and short-range automotive radar applications. The single chip contains a two-channel transmitter with +18-dBm saturated output power per channel; an LO chain with ×4 multiplier, wide-band 20-GHz VCO with −100-dBc/Hz phase noise at 1-MHz offset referenced to a 77-GHz carrier,...
In this paper we present a high sensitivity total power radiometer front-end integrated in a 0.25 µm SiGe BiCMOS technology. The radiometer consists of a two-stage LNA co-integrated with a common-emitter square-law detector. Together these stages provide a peak responsivity of 61 MV/W and a 6 GHz system bandwidth around 56 GHz. An optimized non-50-Ohm impedance interface between the LNA and the detector...
Breakdown voltage and RF characteristics relevant for RF power amplifiers (PA) are presented in this paper. Typically, DC collector-to-emitter breakdown voltage with base open (BVCEO) or DC collector-to-base breakdown with emitter open (BVCBO) has been presented as the metric for voltage limit of PA devices. In practical PA circuits, the RF envelope voltage can swing well beyond BVCEO without causing...
Although latest developments in Si BJTs and SiGe HBTs typically focus on high-speed devices and strong competitors for high-voltage (HV) devices exist (e.g. GaAs HBTs and HEMTs), HV Si BJTs still find widespread application. This paper demonstrates the application of HICUM/L2 to Si BJTs with very high breakdown voltages and highlights the model features that are relevant for the most prominent properties...
A high performance npn bipolar transistor has been demonstrated in a 0.13µm SOI SmartMOS™ technology. This novel bipolar transistor consists of a shallow emitter confined by shallow trench isolation (STI), a base with multiple regions each serving a different purpose without compromising one another, and a lightly doped collector region surrounded by continuous p-type regions biased with the base...
High-current pulsed stress measurements are performed on SiGe HBTs to characterize the damage behavior and create a comprehensive physics-based TCAD damage model for Auger-induced hot-carrier damage. The Auger hot-carrier generation is decoupled from classical mixed-mode damage and annealing on the output plane by using pulsed stress conditions to modulate the self-heating within the device under...
Presents the introductory welcome message from the conference proceedings. May include the conference officers' congratulations to all involved with the conference event and publication of the proceedings record.
Benchmark circuit are small circuit blocks that resemble the major features of the active and passive devices for a given process technology. Such blocks are attractive for verifying the compact models delivered in process design kits as well as for demonstrating the process performance at the earliest possible time. This paper presents results of two broadband Darlington amplifier versions that were...
By means of long-term mixed-mode stress tests of high-speed SiGe HBTs an empirical ageing function for compact models was constructed. This ageing function models saturation of the aging rate as a function of stress time and stress current and is applicable for all relevant mixed-mode stress conditions of this HBT type. Additionally, 1000h stress tests on a high-voltage HBT revealed that not only...
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