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This paper is demonstrated the effect of Ge interlayer and patterned substrate to form low resistance Ohmic contact of n-GaN. The Ge interlayer is acted as heavily n-type dopant atoms at the interface of metal and n-GaN to enhance carrier tunneling. The patterned substrate is designed to increase the annealing temperature at the interface of the metal and n-GaN. Contact resistances were derived from...
Since memristor came out in 2008, neuromorphic designers investigated the possibility of using memristors as plastic synapses due to their intrinsic properties of plasticity and weight storage. In this paper we will present a silicon neuron compatible with memristive synapses in order to build analog neural network. This neuron mainly includes current conveyor (CCII) for driving memristor as excitatory...
This paper reports on an industrial DHEMT process for 650V rated GaN-on-Si power devices. The MISHEMT transistors use an in-situ MOCVD grown SiN as surface passivation and gate dielectric. Excellent off-state leakage, on-state conduction and low device capacitance and dynamic Ron is obtained. Initial assessment of the intrinsic reliability data on the in-situ SiN is provided.
As GaN power devices emerge from research to industry, the characterization of these novel devices itself and its application in power electronic converters is essential. The purpose of this paper is to prove the capabilities of GaN technology using a novel 600 V normally-off GaN-on-Si transistor which shows no dynamic behavior of its on-resistance. A hard switching DC/DC converter prototype reveals...
This paper presents the development of a new multi-channel ground penetrating radar (GPR) for Roadbed Disease inspections. Comparing with many existing pavement GPRs of limited survey efficiency, our system have strong joint positioning capability by implementing joint positioning and video system, as well as the customized designed cart-loading units guarantees the operating capability at regular...
Multitip field emitters are attractive for application in vacuum electronics. But they are not yet widely used due to the difficulty of ensuring its high durability in technical vacuum. The authors have developed a special coatings protecting the emitter from the damaging effects of ion bombardment. The operation of multitip silicon field emitters with protective coatings is described in this report.
The aim of this paper is to introduce a new design of modular bi-directional power switch for 28nm Ultra Thin Body and BOX (UTBB) Full Depleted (FD) SOI advanced CMOS technology and beyond. Moreover, this proposed solution is self-protected against ElectroStatic Discharge (ESD). The first challenge is to obtain a robust symmetrical elementary power device compatible with this technology and with a...
We proposed a stacking structure of nanocrystalline diamond (NCD) and microcrystalline diamond (MCD) films for an insulating material of silicon-on-insulator (SOI) substrate. NCD was deposited on Si wafer substrates by surface wave plasma CVD and then MCD was deposited on as-grown NCD surface. The break down field of the stacking structure was three times higher than that of MCD layers. The thermal...
The macroscopic stress dependence of bipolar junction transistors (BJTs) can be modeled by three transport model parameters as a function of stress: saturation current IS, forward current gain βF, and Early voltage VA. Recent research has shown that Early voltage VA is independent of stress, so it is not discussed in detail in this paper. Unfortunately, accurate extraction of model parameters IS and...
Germanium (Ge) as a high mobility channel material is an option for future PMOSFET for sub 14 nm node. This work presents the ESD robustness of planar Ge diodes on Silicon-on-Insulator (SOI) and bulk Si substrate. They show a reduced It2 with a remarkably improved clamping behavior compared to Si diodes, which is attributed to the intrinsic material properties of Germanium.
A novel side-gated ultrathin-channel nanopore FET (SGNAFET), for fast and label-free DNA sequencing with high resolution and sensitivity, is proposed. The goal of the SGNAFET is to identify the four types of nucleotides in DNA by changes in the channel current of the SGNAFET. Aiming to reach that goal, a SGNAFET with channel thickness (tch.) of 2 or 4 nm was successfully operated and could detect...
In this paper we present a study of the neutrons-induced damage in Silicon Photo-Multipliers. Twenti-six devices, produced by AdvanSiD, Hamamatsu and SensL, have been irradiated at the Geel Electron LINear Accelerator (GELINA) in Belgium on a nearly white neutron beam. The total 1 MeV equivalent integrated dose was 6.2×109neq/cm2. Photodetector performances have been measured during the whole irradiation...
The silicon pixel detector is the innermost component of the CMS tracking system. Based on the precise measurement of up to three unambiguous space points, it allows an effective pattern recognition even in the high track density environment of LHC collisions. In this contribution, we present the performance of the CMS pixel detector during the first LHC run. In particular, we present the hit efficiency,...
Various lasers and light sources on Si via heterogeneous integration of Si/III–V have been reported based on direct growth on Si [1] or wafer bonding technology [2–4]. We reported earlier optically-pumped Si membrane-reflector vertical-cavity surface-emitting lasers (MRVCSELs) fabricated by low-temperature membrane transfer printing processes [5, 6]. Here we report electrically-pumped devices based...
A model for the electrical behavior of pn-junction diodes biased in forward direction and used as a temperature sensitive device (TSD) in microbolometers is presented. It is based on the well-known Shockley equation extended by the ideality factor m. We demonstrate that the largest temperature sensitivity can be reached for diodes at low current density operation featuring a high ideality factor m...
MOSFETs and Tunnel-FETs (TFETs) based on arrays of nanowires (NWs) with 10 × 10 nm2 cross-section have been fabricated with strained silicon on insulator substrates. MOSFET devices show near ideal subthreshold slope close to 60 mV/dec proving excellent channel control achieved by high-klmetal gate stack. As expected fundamental differences between MOSFETs and TFETs in current-voltage characteristics...
Low-frequency noise (LFN) has been investigated in tri-gate (TG) Si nanowire (NW) FET. We have carefully measured and analyzed LFN for gate length down to 40 nm and cross-section width down to 10 nm. Drain current noise spectral density has been measured in linear region from weak to strong inversion of transistor operation. In particular, we have shown that the LFN behavior is in good agreement with...
Dislocations are frequently involved in the growth of nanostructures. On the other hand, dislocations itself are one-dimensional nanostructures with diameters of about 1 nm. The present paper deals with electronic properties of dislocations. In contrast to previous studies, only a few dislocations are measured which excludes interaction with other defects. The characterization of MOSFETs with defined...
The conductivity and low frequency noise of n-and p-type Si nanowire arrays are measured in humid and dry environments. It was found that the conductivity increases for both n- and p-type arrays in a humid environment. The low frequency noise characteristics indicate a change in the carrier transport process from noise governed by trapping processes at the interface in a humid environment to noise...
Numerous ontological or semantic similarity measures have been proposed to determine how similar one concept is to another within the context of an ontology. These measures are shown to have as their basis fuzzy set compatibility measures and have been used in a variety of biomedical and bioinformatics applications. In this paper a new matcher, the mediating matcher with semantic similarity (MMSS),...
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