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Subnanosecond avalanche switching of dynamically overvoltaged diodes is known to occur for both Si and GaAs diodes. Here we present a novel comparative study of Si and GaAs structures. Original experimental setup that allows measuring current and voltage on the diode simultaneously and independently has been used for measurements. Si p+nn+ and p+ pnn+ and GaAs p+nn+ structures with similar geometrical...
Pulsed power systems which utilize solid state switching devices, rather than spark/gas-type devices, could potentially exhibit increased energy density, repetition rate, operational lifetime, and ruggedness. However, further evaluation of advanced solid state devices, such as thyristor type devices, is required to better understand their operation for pulsed power applications. This paper details...
This paper introduces an algorithm called 3-stage current sorting (3S-CS) in half-unary weighted current cells to improve the linearity of a current-steering digital-to-analog converter (DAC). Based our statistical analysis and simulation results, the proposed algorithm improves the DAC static linearity as well as its dynamic performance.
This paper is a continuation of our former work [1-2]. In this paper, injected AC current and Giant Magneto-Resistance (GMR) sensor were used to detect small defects in the order of few hundred micrometers in thin layers using two connectors and detecting the perturbation of the magnetic field due to a defect using a GMR sensor. A sample of silicon wafer with copper metallization of few micrometers...
Addressable transistor arrays (∼20,000 devices) provide an attractive test vehicle to study TSV/FET proximity effects in a statistically meaningful way. FET/TSV proximity effect studies have been performed at the 45 nm node using a dense addressable parametric diagnostic (APD). We have found that a carefully designed TSV integration sequence at this node has minimal impact on the quality of devices...
The field of silicon photonics is becoming more important due to the ever-increasing data rates of modern computers [1]. While silicon lends itself well to the monolithic inegration of high quality modulators, detectors, and waveguides, it remains very challenging to acheive high quality light emission for use in silicon photonics. As yet, there have been three main approaches to providing silicon...
For the proper simulation and understanding of segmented silicon sensors the surface boundary conditions and the charge density distribution in the SiO2 layer (and other insulator layers if present), as well as at the Si-SiO2 interface have to be known.
Many detectors used in particle physics and photon science require a high bias voltage to function properly. The needed electrical potentials range from tens of volts to hundreds of kilovolts. In most instances the applied voltage must be gradually raised or tuned depending to the conditions, which necessitates the ability to precisely vary the bias. Traditional electrical supplies are often expensive,...
The paper describes a CMOS Integrated Circuit designed for interfacing a Silicon Photomultiplier (SiPM) in UMC 180 nm technology. It features a full signal processing architecture containing Pole-Zero Cancellation (PZC) circuit, Peak Detector and Hold circuit and Comparators which one of main purposes is the coincidence recognition. Front-end electronics consists of two separate channels one for each...
M/Semi-insulating (SI) GaAs/M diodes with novel Mg-based metallization are investigated using current-voltage measurement, α-particle and photon detection. An anomalous decrease of the reverse current and peculiar photon spectra has been observed with such contact explainable by a strong electron accumulation due to the creation of a quasi-degenerate region at the Mg/SI-GaAs interface.
The present work analyzes a four-terminal Hall-plate device to determine the main sources of error and explain how current-spinning technique can be used to effectively reduce offset and noise. Based on this analysis, an improved magnetic sensor is designed using an eight terminal octagonal Hall plate and a chopped-based control circuit to implement the current-spinning technique. Since Hall plates...
This paper presents an efficient optical biosensor set up for a low-level light detection, using fluorescent dyes and a novel Si-based detector. Fluorescence emitted by a traditional fluorophore, CY5, widely used as optical label in DNA microarrays, was detected using a 25 pixels Silicon photomultiplier (SiPM), a device formed by avalanche diodes operating in Geiger mode, in parallel connections....
In this paper, the minimum operating voltage of master-slave flip-flops made in advanced fully-depleted silicon on insulator (FDSOI) technology, is studied through silicon measurements. A shift register of 1024 master-slave flip-flops has been fabricated in 28nm FDSOI technology in order to study the minimum operating voltage with respect to a wide back bias range allowed by the FDSOI technology....
Micro-Raman spectroscopy (μRS), finite element modelling, and electrical measurements of transistors used as stress-sensors, are used to study stress in a 3D-stacked IC. It is shown that the combination micro-bumps/underfill causes large stress variations in the silicon. Correlation of the three techniques shows that the effect of the different stress components and of X-sectioning on stress reduction...
We present measurements of the quantized current delivered by a hybrid metal/semiconductor electron pump. Here we report on the dependence of the quantized current as a function of various control parameters at temperatures below 1 K. This characterization was done with a 20000 turns cryogenic current comparator (CCC) in internal feedback mode. Stability measurements over more than 10 hours have demonstrated...
Nanoscale single-electron pumps could serve as the realization of a new quantum standard of electrical current. Here, a silicon quantum dot with tunable tunnel barriers is used as a source of quantized current. By controlling the electrostatic confinement of the dot via purposely engineered gate electrodes, we show that the robustness of the pumping mechanism can be dramatically enhanced and the detrimental...
We propose a new class of semiconductor transistor devices based on graphene/SiC and graphene/Si Schottky junctions that have the potential to be transformative. By using the graphene as collector/emitter in a bipolar transistor (BJT) and not as a channel material, there is relaxation of the tolerances in graphene thickness and quality, simplifying growth, device design and fabrication. This also...
The Ge/Ge0.94Sn0.06/Ge double heterostructure, grown on a Si substrate was fabricated into a p-i-n photodiode. The dark I-V characteristics and 1.4–2.2 μm spectral response were measured for comparison with other on Si infrared detectors.
In this paper, we propose a rate adaptive compressed sensing for block-based DCVS framework, in which the sampling rate is estimated at the decoder side and can be sent back to the encoder via the return channel. The assignment of measurements rate (MR) is depending on the variance of the residual measurements between SI and the reconstructed CS frame. By comparing with the encoder-based scheme, the...
Precisely aligned arrays of sharp tip structures on top of elongated pillars were realized by using an improved fabrication process including an additional inductively-coupled-plasma reactive-ion etching step. Arrays of n-type and p-type silicon with 271 tips have been fabricated and investigated. Those structures have a total height of 5–6 µm and apex radii less than 20nm. Integral field emission...
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