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Silicon detectors have been used in astrophysics satellites and particle detectors for high energy physics (HEP) experiments. For HEP applications, EMC studies have been conducted in silicon detectors to characterize the impact of external noise on the system. They have shown that problems associated with the new generation of silicon detectors are related with interferences generated by the power...
Deep Reactive Ion Etch (DRIE) processes used to form Through Silicon Vias (TSVs) achieve high aspect ratios by depositing polymer on the vertical sidewalls of the features. This polymer material must be removed before other materials (including dielectric liner, Cu barrier, and Cu) are deposited in the TSVs. Clean processes adapted from Cu damascene integration flows use a combination of oxygen ash...
This paper presents a new test protocol aimed at accurately determining the temperature of 3D electronic circuits as well as their heat distribution. It is based on AC electrical measurements coupled with InfraRed Lock-In Thermography (IR LIT) measurements. The circuit temperature is assessed thanks to AC resistance measurements and the Temperature Coefficient of Resistance (TCR) of metallic layers...
Through-silicon-vias (TSVs) processes, which provide direct electrical paths between chips which results in shorter interconnect length, improved performance and better power efficiency, have been intensively investigated for vertically-stacked 3D semiconductor devices. Low-k materials have been considered in the literature for the insulation layer of the TSV interconnection since its low dielectric...
Nanostructure has been envisioned as a novel factor to enhance biomolecular sensing characteristics. In this work, we propose a novel biosensor by using a nano gap formed between two electrodes for biomolecular detections. The nano-gap electrode increases sensitivity of near-surface electrochemical conductances. To examine the proposed sensing characteristics of the nano-gap electrode, different conductive...
A difficulty concerning characterization of charge trapping in microwave FETs by performing pulse measurements is the possible overlap between the trapping and self-heating rates. Another difficulty is that the potential introduced by charge trapping modulates the drain-source current differently at bias points with different values of drain-source conductance, gm, and drain transconductance, gd....
The formation of silicon tips and nanoporous Si surfaces by metal-assisted chemical etching method has been performed. The electron field emission from sharp silicon nanostructures has been investigated. The influence of residual gas in vacuum chamber has been observed and explained by formation of the negative dipoles on the surface due to the adsorption of oxygen.
Passive RFID circuits depend on low voltage low power area-efficient current references. This work presents two current source implementations using 180 nm CMOS process. Both circuits work with a minimum supply voltage of 0.8 V and with a current consumption lower than 150 nA. The first one has a positive temperature coefficient while the second one is temperature compensated. Silicon results from...
Efficiency droop remains a significant problem to be overcome if the performance of LEDs for solid state lighting is to be improved. As more cost effective substrates such as silicon wafers are used on which to grow the LED active layers, the overall output efficiency and efficiency droop at high drive currents need to be monitored and better understood. This paper investigates the droop effect at...
In this paper, we present a honeycomb structure to maximize the edge-length in the detector and therefore enhance the detector responsivity in the blue region of the spectrum. A layout of a prototype honeycomb detector was designed and fabricated on a silicon wafer using a standard CMOS process. Based on our measured spectral response, the honeycomb structure improves the photocurrent in blue by about...
Networks appear naturally in many high-impact real-world applications. In an increasingly connected and coupled world, the networks arising from many application domains are often collected from different channels, forming the so-called multi-layered networks, such as cyber-physical systems, organization-level collaboration platforms, critical infrastructure networks and many more. Compared with single-layered...
We report the optoelectronic characterization of Ge2−xSnx/Ge heteroj unction infrared (IR) photodetectors fabrication on Si substrate using rapid thermal chemical vapor deposition (RTCVD) with Ge2H6 and SnCl4 precursors and in a CMOS compatible process. We obtained that Sn contents in Ge1−xSnx. epitaxial layer ∼5.9%. The surface roughness root mean square (RMS) were 1.2 nm. The leakage current of...
Direct modulation of membrane DFB laser was carried out. Small signal response showed −3dB bandwidth of 9.5 GHz at a bias current of 1 mA. This corresponds to modulation current efficiency factor of 9.8 GHz/mA½.
The space radiation induced displacement damage effects on the performance of the Silicon Drift Detector (SDD) based X-ray spectrometer has been studied using X-ray (Fe-55) and gamma ray (Co-60) radiations. The spectroscopic performance of the SDD based spectrometer degrades due to radiation damage during the transit and in-orbit operations. Silicon detectors are sensitive to displacement damage which...
We have developed silicon (Si) strip photon counting detectors for modalities used in clinical breast imaging including mammography, tomosynthesis, computed tomography, and lump imaging in the operating room. Typically, x-ray integrating detectors based on scintillating cesium iodide CsI(Tl) or amorphous selenium (a-Se) are used in most commercial systems. Recently, mammography instrumentation has...
In this work we propose the application of a radiation damage model based on the introduction of deep level traps/recombination centers suitable for device level numerical simulation of radiation detectors at very high fluences (e.g. 1÷2×1016 1-MeV equivalent neutrons per square centimeter) combined with a surface damage model developed by using experimental parameters extracted from measurements...
Our group has designed a family of ASICs dedicated to the readout of semiconductor detectors for space applications, named IDeF-X standing for Imaging Detector Front-end [1]-[3]. IDeF-X BD is a new member of the family. It has been optimized for the readout of low capacitor and low leakage current Silicon or Cd(Zn)Te detectors. IDeF-X BD has been designed in the standard AMS CMOS 0.35 μm process technology...
This work presents a model describing the IV characteristics of SiPM detectors allowing to easily determine important physical parameters like breakdown voltage VBD and triggering probability PGeiger. The proposed model provides a good description of experimental data taken with SiPMs of different technologies (i.e. Hamamatsu HPK, KETEK) and geometries. Good agreement over a very wide range of current...
We demonstrated a novel CMOS approach for the fabrication of high-performance Ge quantum dot (QD) MOSFETs offering great promises as optical switches and transducers for Si-based optical interconnects. Measured photocurrent to dark current ratio (Iph/Idark) and photoresponsivities from the Ge QD PT were as high as 272,000 and 1.7 A/W, respectively, under incident power of 20 μW at 980 nm illumination...
Silicon Carbide MOSFETs and Schottky diodes can operate at higher voltages and higher temperatures than their Silicon counterparts. Nowadays, SiC devices can compete with Si ultrafast diodes and Si IGBTs in terms of efficiency and converter volume. This paper shows the experimental characterization of SiC devices and their comparison with Si devices to demonstrate their superior performance in resonant...
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