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Through-silicon-vias (TSVs) processes, which provide direct electrical paths between chips which results in shorter interconnect length, improved performance and better power efficiency, have been intensively investigated for vertically-stacked 3D semiconductor devices. Low-k materials have been considered in the literature for the insulation layer of the TSV interconnection since its low dielectric...
TSV backside reveal is one of the key process modules for enabling 2.5D integration. This paper presents a robust and low cost solution for TSV backside reveal. 300mm wafers with a TSV size of 10µm×100µm are used to evaluate the proposed backside reveal solution. A high selective wet etching process with an etch rate of about 15 µm/min is used to replace conventional Si dry etching step for Si recess...
Nowadays, 2.5D and 3D stacked die technologies are under prosperous development for the benefit of transistor scaling and performance. However, with the trend of higher electrical performance, lower power consumption and cost effective demand, Non-TSV interposer (NTI) is one of the ways to meet the requirement. This paper introduces and demonstrates the NTI process flow, which includes chip-on-wafer...
Current TSV integration schemes include via-first, via-middle and via-last process flows. In this paper, a low thermal budget, 10ìm pitch and aspect ratio 10 (5ìm diameter, 50ìm depth) via-last TSV module is presented. The proposed via-last module is plugged in after the thinning module, with 50ìm thinned device wafers temporary bonded to a Si carrier, using Brewer Science Zonebond® material. After...
In this work the circuit segmentation approach for the modeling of Through Silicon Vias (TSV) is extended to the presence of time domain non linear phenomena such as depletion and capacitance hysteresis. Results are shown discussing the impact of the voltage bias on the above mentioned non-linear phenomena and their combined impact on crosstalk among TSV and between TSVs and active circuits.
A novel inspection technology for detection of thin polymer layers, deposited on structured silicon wafer surfaces, has been developed. The labeling of polymer residues with fluorophore combined with the subsequent examination under a fluorescence microscope enables a non-destructive detection of amorphous and semi-crystalline polymers and polymer residues on wafer substrates.
Etch is one of the most critical processes for high-aspect ratio TSV as it defines the profile and wafer level depth uniformity of TSV, thus having a great impact on other downstream processes in TSV module and TSV backside reveal. This paper presents the challenges encountered in developing the 6μm × 55μm TSV (6μm diameter × 55μm depth) with a number of continuous process optimizations. These include...
This paper demonstrates the integration of microfluidic cooling for thermally limited 3-D microsystem applications. Thermal modeling of logic and memory dice on a silicon interposer is presented under air and microfluidic cooling conditions. Moreover, the electrical characteristics of micropin-fin-embedded through silicon vias (TSVs) immersed in deionized (DI) water are investigated through high-frequency...
Present advanced-process for the fabrication of through silicon via (TSV) with highly phosphorus-doped n++-polycrystalline Si plugs for driving an active-matrix nanocrystalline Si (nc-Si) electron emitter array was described. The resistance per one TSV was measured to be 150 Ω, and voltage drop at the TSV plug in a normal driving operation was sufficiently small to apply the diode current to the nc-Si...
This paper proposes a combination of annular copper and cylindrical copper as the TSV conductor to decrease the effect of thermal mismatch between copper and silicon in MEMS packaging, which results in a reliability risk between redistribution layer (RDL) and TSV. There are three important factors which may have the most serious influence on the reliability being simulated and analyzed. They are the...
Through Silicon Vias (TSVs) are the interconnections in three dimensional integrated circuits responsible for the vertical lines inside the dies. In particular, the open TSV has been developed in order to reduce thermo-mechanical issues. This interconnect structure has interfaces where the possibility of a device failure due to delamination needs to be considered. The Critical Energy Release Rate...
The purpose of this study is to evaluate the strength of TSV silicon chips using a point-load on elastic foundation (PoEF) test, associated with an acoustic emission (AE) method for detecting local material cracks or delamination occurring during the test before the chip breaking (or catastrophic failure). The results indicate that there are no larger-than-25 dB AE signals and no via cracks occurring...
With the anticipated slow-down of Moore's Law in the near future, three-dimensional (3D) packaging of microelectronic structures would enable to further increase the integration density required to meet the forecasted demands of future exa-scale computing, cloud computing, big data systems, cognitive computing, mobile communicatoin and other emerging technologies. Through-silicon vias (TSVs) are a...
In this paper, the performance of GSG co-planar waveguide (CPW) type transmission line on silicon interposer and stacking memories by through-silicon-vias (TSVs) are analyzed. The high conductor loss of fine lines will cause the impedance varying with frequency and make the reflection loss minor. Furthermore the flat attenuation of such fine line will result in low distortion waveforms and have better...
The filling process of Through-Silicon Via (TSV) based on printed silver using the Aerosol Jet™ method is presented and discussed. TSVs with different diameters as via-last process in 18 μm ultra-thin ChipFilm™ dies, including a self-aligned etching process and their passivation are demonstrated. Daisy chain test structures on top of ChipFilm™ dies and on the bottom wafer are used for demonstration...
2.5D integration requires vertical stacking of dies while forming permanent electrical and mechanical connections between the input/output pins of the devices. Through silicon via (TSV) is one of the key elements for 2.5D integration. This paper presents a full process integration solution for interposer with 10×100μm copper filled TSVs, which involves TSV etch, TSV insulation, barrier and seed layer...
Thermal issue is a leading design constraint for three-dimensional integrated circuits (3D-ICs) and through silicon vias (TSVs) are used to reduce the temperature of 3D-ICs effectively. In this paper, the finite difference method-based heat conduction equations is proposed for the thermal analysis of the TSV structures in 3D-ICs and generalized minimum residual method (GMRES) with symmetric successive...
This paper presents a Novel TSV-Based power harvesting system for low-power applications. The proposed system can harvest the energy from the coupling power between the signal through silicon vias (TSVs) in the 3D-SoC. The proposed system consists of three modules: energy source, energy harvesting which is based on TSV-based patch antenna, and power management module. The energy harvester module consists...
Silicon interposers offer a viable path to perpetuating the trend of increased chip performance per die area, as projected by Moore's law, which can no longer be met by simply shrinking feature sizes. The enablement of such packaging solutions not only requires new processes for Through Silicon Vias (TSV), thin die manufacturing, assembly and test, but also a well-defined concept of process and supply...
Cost remains a key factor for implementation of Through Silicon Via (TSV) in high-volume manufacturing. As compared to via-first and via-middle TSV, via-last (from wafer back-side) TSV possesses the advantage of a more simple process flow and more flexibility in integration for more varied applications. Previously, a cost model analysis for Through-Silicon-Interposer (TSI) using via-first TSV has...
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