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With bias conditions changed during irradiation, the bias dependence of the total dose radiation response of fully depleted (FD) silicon-on-insulator (SOI) n-channel MOS transistors (NMOSFETs) is investigated preliminarily. It is found that the threshold voltage shift of the FD SOI NMOSFETs as a function of total dose exhibits an abrupt inverse change, namely, a unexpected rapid reduction, with increasing...
From the varying threshold voltage of MOSFET caused by the external factor, this paper analyzes the variation tendency of amplifier's gain. It makes clear how the gain of three different amplifiers changes in theoretical. After that, EDA tools are utilized to verify the theoretical calculation. The theoretical and simulation result show that threshold voltage(Vth) is a sensitive parameter of amplifier's...
We investigate for the first time the influence of the back gate bias (VB) in the main digital and analog parameters on Silicon-On-Insulator (SOI) omega-gate nanowire devices down to 10 nm width (W). For wider channel, it was observed that for high negative VB the subthreshold swing (SS) and DIBL are decreased due to the better channel confinement while the intrinsic voltage gain is almost insensitive...
This paper presents an energy harvesting platform for biomedical implantable sensors based on a far-field electromagnetic radiation. The design is composed of an on-chip dipole antenna and a multi stage Dickson voltage rectifier with threshold compensation order of 4. The operating range is up to 15 cm, including 1 cm of biological tissue with high water content. The optimum frequency for power transmission...
4H-SiC MOSFET have been fully characterized in the forward conduction over the temperature range −30°C to 150°C. The distinct characteristics of SiC MOSFET and the Si MOSFET counterpart are compared and explained. A physics-based analytical model for SiC MOSFET has been developed by using the MAST language and simulated with SABER. The influences of the geometry (short channel effects), channel mobility,...
This paper investigates the Total Ionizing Dose (TID) response of nanoscaled Tri-Gate Field-Effect Transistors (FET) made of silicon multiple-gate NanoWire (NW). The NWFET architecture relies on its remarkable electrostatic properties to push "silicons-based technologies much deeper into device scaling than present FinFETs. But as commonly observed when a new device or technology concept is proposed,...
This paper evaluates the SuperJunction MOSFET in cascode configuration with a low-voltage silicon MOSFET. The structure combines the good switching performance provided by the cascode configuration with advantages of the silicon technology as the robustness, the maturity and the low-cost. The objective of this paper is to elucidate and to demonstrate the reduction of switching losses of SuperJunction...
Device level variability in silicon trapezoidal FDSOI FinFET due to Random Dopant Fluctuation (RDF) is analyzed and a simulation approach for studying the RDF effects in the trapezoidal FDSOI FinFETs using TCAD tools is proposed here. A 22nm gate-length silicon-on-insulator (SOI) FinFET with a body width of 15nm for demonstration is used and this approach utilizes the random nature of the dopant variations...
In this paper, we have proposed a new junctionless cylindrical gate (JCG) MOSFET design which is centered on both gate material engineering and source/drain extensions. In this, an analytical model for sub-threshold slope is developed. This paper shows the effect of device parameters like the channel length, oxide thickness and silicon thickness on threshold voltage and sub-threshold slope. All the...
The demands and expectations of high performance devices using Field Effect Transistors (FETs) are increased day by day. In order to obtain transistors with smaller size but with increased speed and performance, device scaling was done. However, making transistor in smaller size is not an easy task. One of the challenges with scaling the size of transistor is the short channel effects (SCEs). In order...
A Junction-less twin-gate Vertical-Slit Field-Effect Transistor (VeSFET) is the elementary component of a new 3D VeSTIC technology [1]. Feasibility studies conducted until now indicate that VeSTIC architecture has the potential to overcome many barriers of ICs scaling in the deep-submicron era. As it was shown earlier, electrical properties of VeSFETs seems to be very attractive, but simulations [5]...
This paper reports that the unclamped inductive switching (UIS) withstanding capability of high voltage GaN-HEMTs depends on the gate voltage at off-state and the substrate connection. The relation between the UIS withstanding capability and the electrical potential at gate and substrate is discussed by the results of the UIS test for GaN-HEMTs with p-type gate structure. Conclusively, the mechanism...
Various biosensors are employed for characterization of biochemical molecules. In this paper, we present a new Chemically Modulated biosensor structure based on Silicon on Ferroelectric-Insulator (CM-SOFFET). The body-stack SOFFET device has shown tremendous potential for various Ultra-low-power (ULP) and biosensing applications. The device has the potential to provide high performance multi-Vt design,...
An overview of main results concerning THz detection related to plasma nonlinearities in nanometer field effect transistors is presented. In particular nonlinearity and dynamic range of these detectors are discussed. As a conclusion, we will show one of the first real world application of the FET THz detectors: a demonstrator of the imager developed for fast postal security.
In this paper, we present the enhanced performances of a compound Junctionless Double Gate MOSFET (JL DG-MOSFETs) using Indium Gallium Arsenide (InGaAs) as compound material and Aluminum Oxide (Al2O3) as oxide layer and compared with Silicon JL DG-MOSFET using SiO2 as an oxide layer. The proposed In0.53Ga0.47As-Al2O3 Junctionless DG-MOSFET provides a tremendous improvement in various factors like...
Threshold voltage (Vt) stability of commercial SiC DMOSFETs during bias-temperature stressing was evaluated using the fast-Ic and fast Id-Vgs measurement techniques at both room and elevated temperatures. Unipolar bias stress results confirmed that there is a rapid recovery of Vt and that all vendors' devices showed the same basic charge-trapping behavior, although some differences were observed in...
A new double integration-based method to extract model parameters is applied to experimental polysilicon nanowire MOSFETs. It was experimentally found that the saturation current shows the sensitivity of the Nano-wire MOSFETs if the conventional method fails to show the sensitivity depending upon the threshold voltage of Nano-wire MOSFET. It shows that the present method offers advantage over previous...
In this paper, the TCAD simulation of charge plasma based double gate junction-less transistor with channel length of 18nm is analyzed. The structure shows better ION/OFF ratio(107) compared to the conventional junction less transistors (JLT). The use of charge plasma concept for inducing n+-n+-n+ regions and generating free charge carrier for conduction makes the process of fabrication easier for...
The characterization of low-frequency (LF) noise is carried out in p-type Si passivated Ge FinFETs, comparing the performance of narrow (Wfin = 20 nm) and planar-like (Wfin = 100 nm) devices. The low-frequency noise is shown to be dominated by flicker noise, i.e., (1/fγ) where γ∼1, in the evaluated frequency range for both fin widths, which is governed by number fluctuations. Furthermore, narrow devices...
In this paper, the design aspects of charge plasma based junctionless transistors viz., (1) doping-less dual material double gate (DL-DMDG) junctionless transistor and (2) Gate stacked architecture of DL-DMDG JLT are used to evaluate the device performances. The n+ source/drain regions are formed by employing charge plasma technique over the intrinsic silicon. Dual material gate architecture helps...
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