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This paper proposes the possible physics-based model for the conductive filament (CF) at the low-resistance state (LRS) of thin SiO2 films that were formed by sputtering technique. The closed and analytical current models proposed here are examined by experimental results.
The switching characteristics of the resistive switching memory with local electrical field are investigated. The local electrical fields in the HfOx film are created by some sharp regions of bottom electrode. Compared with planar structures, this design can improve the yield and uniformity of set/reset voltage for Pd/HfOx/TiN structure. Results indicate that the sample with spacer and raised structures...
Triple quantum dots (QDs) connected in series were successfully fabricated by the use of pattern-dependent oxidation (PADOX) [1] of a Si nanowire and additional oxidation through the gap of three fine gate electrodes attached on the Si nanowire. This method made a QD just under each gate. The fabricated devices were confirmed that they actually consisted of three dots by the electrical measurements,...
Small Si single-electron transistors (SETs) show interesting nature due to their complicated energy-level structure. We evaluate Coulomb diamonds and excited states of dual-gate SETs by changing an electric field in the SET island. Even though the number of electron in the SET island is constant, the electric field applied by the dual gates remarkably changes the electron addition energies. In addition,...
Optical switches based on multimode interference (MMI) couplers can reduce footprint and increase tolerance against fabrication deviations. Furthermore, a 50% power consumption reduction has been demonstrated by designing a trenched MMI for thermal isolation without penalizing insertion losses and crosstalk.
Heterogeneous integration of submicron films of lithium niobate on silicon substrates, rib-loaded with chalcogenide glass, is used to demonstrate lithium niobate microring modulators with Q of 1.2×105 and Mach-Zehnder modulators with Vπ.L of 3.8 V.cm.
The Ge0.9Sn0.1 photoconductor was fabricated with interdigitated structures on Si using a CMOS-compatible process. Temperature-dependent responsivity and specific detectivity were measured. The peak responsivity of 2.85A/W at 77K was achieved due to enhanced photoconductive gain.
We demonstrate single- and double-gated (SG & DG) field effect transistors (FETs) with a record source-drain length (LS/D) of 15 nm built on monolayer (tch∼0.7 nm) and 4-layer (tch∼3 nm) MoS2 channels using monolayer graphene as the Source/Drain contacts. The best devices, corresponding to DG 4-layer MoS2-FETs with LS/D=15 nm, had an Ion/Ioff in excess of 106 and a minimum subthreshold swing (SS...
A single-cell electroporation system is presented capable for efficient, highly parallel, and noninvasive transfection of biological cells as required in cloning experiments. The 2D geometry of Si-chips with cells cultivated on their surface enables good controllability and accessibility of the experiment using standard microscopic monitoring methods. On the basis of a modified silicon-on-insulator...
In this paper, we have present analytical models based extraction of materials parameters for PCMO based RRAM. Based on a trap-SCLC model, the energy and spatial distribution of trap-density is extracted. A single-level trap energy is estimated. The uniform trap density model provides consistent trap density estimated from low bias Ohmic regime as well as high-bias Trap-Filled Limit regime.
As photovoltaics (PV) cost reduction driven by economies of scale is approaching a limit, technological breakthroughs are likely to become again the next driver for further growth. In this paper, we review the most significant photovoltaic (PV) device technologies. First, commercially available cells and modules are briefly surveyed, focusing on the innovations that have recently reached the market,...
These days, in emergency, multiple assay operations are required to be performed at parallel. Area of a given chip as a constraint, how efficiently we can use the chip and how much parallelism can be built-in are the objectives of this paper. A typical application of an assay may characterize a sample where, say only one type of reagent and multiple samples have been considered, or vice versa, and...
Titanium dioxide, known as a high-k biocompatible dielectric transducer material, is processed by means of ALD and applied to a 3D structure with dimensions typical for multi-site multi-channel in-vivo neural interfaces. High uniformity, high areal capacitance, and in particular low leakage current densities are achieved within a sufficiently wide operation voltage window. The results demonstrate...
This paper reports on the modeled and experimental results of industrial aluminum back surface field (Al-BSF) silicon solar cells with different number of busbars (three-, four- and five) for cost-effective metallization. It is found that by keeping the same metal grid coverage, solar cells with four- and five-busbar designs give higher fill factor (FF) and conversion efficiency than the-state-of-the-art...
With the advent of high-bandgap perovskites, the opportunity now exists to make tandems with perovskites on top of silicon. We have prototyped a mechanically stacked tandem, achieving 17.9% certified efficiency using a perovskite cell with a silver nanowire mesh electrode. We have also prototyped a monolithically integrated tandem on silicon, with the two subcells electronically connected by band-to-band...
Solar-grade Si can be recycled from end-of-life crystalline-Si solar cells and this recycled Si can be a new feedstock for growth of Si ingots. This study focuses on removing heavily-doped layers from crystalline-Si solar cells and extracting the Si base for recycling. The solar cells used in the study are commercial cells without the front Ag electrode. It is demonstrated that the heavily-doped layers...
Light-induced plating of Si solar cells was analyzed using in-situ linear sweep voltammetry using a potentiostat configured with a reference electrode. The current-voltage relationships recorded depend on the characteristics of the solar cell, the electrochemical reactions at the interface and the electrolyte resistance. Linear sweep voltammetry can be used to ensure that the solar cell operates under...
This paper reports aluminum (Al) electroplating as the metallization technique for the front finger electrode on n-type silicon (Si) in crystalline-Si solar cells. The development of the Al electroplating process is motivated by the limited reserves of silver (Ag) on this planet and the industry-wide push to reduce Ag usage for cost control. The new metallization process consists of: 1) patterning...
Silicon avalanche photodiode (APD) was fabricated by standard 0.18 µm CMOS process. The current-voltage characteristic and frequency response was measured for the APD with and without guard ring. With the guard ring around the perimeter of the diode junction, it shows a better performance for the maximum bandwidth but in contrast lower in responsivity. To enhance the bandwidth, the detection area...
Large magnetoresistance (MR) in non-magnetic semiconductors, especially silicon, the mainstream semiconductor in information technology, attracts a lot of attentions because of its interesting physics and broad applications [1-6]. One pathway to achieve large MR is to utilize the resistance transition resulted from the rectification characteristics of diodes, which is called as diode-assisted MR....
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