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Si-SiO2 multilayer nanoscale structures were obtained using a procedures of alpha-Si:H thin film depositions and subsequently plasma enhanced oxidation. Thus, a structure containing 6 layers of alpha-Si:H with thickness of 50 Aring, inserted between the layers of SiO2 with thickness 150 Aring has been created. The experimental setup with source of wide aperture and high-density inductively coupled...
We experimentally demonstrate surface excitation of hybridized plasmons in metallic nanocavities. We developed a quasi-static model connecting this observation to plasmonic antenna behavior for extraordinary light transmission effect.
We report synthesis of luminescent, spherical Si quantum dots by dry and wet etching of Si/SiO2 core/shell structures fabricated by oxidation of ball milled Si. The possible mechanism of photoluminescence is briefly discussed.
A thin-film nanodiamond macro-electrode and a microelectrode array (MEA) with SiO2 film as the insulator, both on a highly doped silicon substrate were fabricated for biosensing applications. Fe(CN)3-/4-6 redox couple is used for electrochemical characterization of the MEA using cyclic voltammetry, which gives a sigmoidal response consistent with hemispherical diffusion limited mass transport mechanism...
In this paper we present a quick and easy method for producing relatively large areas of substrate that enhance the Raman effect, using standard semiconductor processing techniques such as reactive ion etching of silicon and electron beam metal deposition. As standard cleanroom processes are used, it is possible to narrowly control the parameters of the fabrication process to create silicon nano-pillars...
In-situ tensile testing in EM (electron microscopy) is a useful tool for studying mechanical properties of nano-structures because it can provide quantitative information on sample deformation at atomic scale. In this work, MEMS tensile-testing chips with differently thick <110>-oriented SCS nanobeams were designed, fabricated and utilized in SEM and/or TEM to manipulate SCS nanobeam and measure...
The microstructure and electromagnetic properties of FeCoB-SiO2 thin films which were deposited on different substrates (silicon, glass and Mylar) by using magnetron sputtering were studied. X-Ray Diffraction revealed that FeCo nanocrystalline only precipitated in FeCoB-SiO2 thin films on silicon and glass substrates, and the FeCoB-SiO2 films on Mylar substrate were amorphous. The surface images obtained...
The interaction distance between Si nanoluster and Er is investigated using multilayers. We find that the effective sensitization distance can be more than twice the cluster-Er interaction distance due to Er-Er energy transfer.
Negative photo-conductivity, super linear variation of short circuit current with incident light power, and IR absorption have been observed in Si-rich oxynitride film containing silicon nanocrystals and the mechanism was discussed.
Crystalline nanomembranes of Group IV elements offer a new perspective on potential photonic and optoelectronic structures, including flexible photodetectors, photonic crystals, wave guides, light sources, and oscillators.
This work demonstrates the fabrication of a silicon-based electrical source for surface plasmon polaritons (SPPs) at low temperatures using silicon nanocrystal doped alumina within a metal-insulator-metal (MIM) waveguide geometry. The fabrication method uses established microtechnology processes that are compatible with backend CMOS technology. The fabricated device suggests a route forward towards...
Flexible photodetectors were demonstrated experimentally on large-area crystalline silicon nanomembranes (3 mm times 3 mm), based on wet transfer and metal-frame supported transfer processes. Very low dark current (a few nA) and linear photoresponses were demonstrated for both Si MSM and InP PIN photodiodes on flexible PET substrates.
A comparison is presented of the results obtained by two transmission electron microscopy (TEM) techniques, CBED and the new electron holographic technique HoloDark, on two selected structures in which the Si crystal has been stressed by two different means. First, we focus on a real transistor in which the Si channel is stressed by recessed SiGe source and drain, then, we report on results obtained...
Q-factor tuning in stress-engineered microresonators is presented. Bent-edge microdisks (mu-kylix), where highest Q's are 60 nm blue-shifted with respect to flat disks, are used to probe Purcell enhancement of Si-nc emission rate in a wide spectral range.
Optically active microtubes are fabricated by high temperature annealing of Si/SiOx rolled-up membranes. Spontaneous emission from Si nanostructures dispersed in microtubes is investigated by photoluminescence spectroscopy. Waveguiding along the axis of Si/SiOx tubes is demonstrated.
The paper presents a collection of slides that discusses the modeling of light and bias stress induced defects in nc-Si:H thin film transistors. The discussion includes experimental set up, modeling consideration, gate stress of photo-TFT and the instability mechanisms in nc-Si photo-TFT.
The 'hotter and faster' trend in rapid thermal processing (RTP) of semiconductors requires RTP equipment to be capable of reaching very high temperature along with very fast ramping and cooling rates. To fulfill the critical needs of the future RTP technology, LT technologies (LTT) has been developing a solid state, cavity-less and variable frequency based microwave technology capable of generating...
Possibility to decrease nanochannel diameters up to one nanometer was demonstrated by Monte Carlo simulation of molecular beam epitaxy on nanochannel surface with following thermal oxidation. Study of atomic processes on porous Si(111) substrates was carried out. In wide range of deposition parameters the rate of nanochannel inlet size decrease was estimated to be 0.13 - 0.15 nm/ML. Optimal conditions...
Planar-type porous silicon cold cathodes have some specific properties: the emission of energetic electrons with small angle dispersion and the availability for various media including solutions. The nanocrystalline silicon dot chain incorporated into porous silicon plays an important role as a drift layer generating quasi-ballistic electrons. The porous silicon drift layer is usually formed using...
In this paper, we report on the evaluation of the emission uniformity in the emission area of the cathodes by using a Faraday-cup with a probe hole of 20 mum in diameter. In the experiments, the cathodes were operated in pulse mode with the frequency of 100 Hz with pulse width of 250 mus in a vacuum of 10"8 Pa.
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