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Performing electrical test is the most challenge process in the 3D-IC device fabrication and manufacturing. There have been many papers published and presented for 3D-IC device testing technology such as 3D-IC design for test, test for less in the 3D-IC manufacturing etc… Most of them are circuit design related techniques. In this paper we will discuss a different point of view in the device packaging...
High-end computing systems are expected to scale from petascale to exascale over the next decade. We describe requirements and architectures for high-bandwidth interconnects based on integrated photonic components that could enable this performance growth.
Through Silicon Vias (TSVs) are the method of choice to realize vertical connections between different chip layers in three dimensional Integrated Circuits (3D-ICs). These TSVs offer a fast connection and due to their short wire length, only a small capacitive load to the driving circuitry. On the other hand TSVs consume a relative large amount of chip area and as TSV-count increases the overall yield...
Predicting what lies ahead is fraught with peril as our ability to see is dependent on where and how we look. We are in a regime where nanometer advances can still deliver major performance increases. Our immediate directions are clear but many choices will need to be made in the next few years to be ready for technology in 2020 and beyond.
Classical constant field scaling has reached a point of diminishing returns as a result of fundamental limitations, increased process complexity and lithographic challenges. Si-based passive interposers offer the possibility of integrating heterogeneous technologies on a silicon substrate as well as the possibility synthesizing very large chips with silicon like latencies. 3D die stacking allows for...
We report on a 44-GHz Transceiver Array architecture that integrates all required functionality for rf beamforming and radiation using a single 16-channel Silicon-Germanium rf beamforming integrated circuit, a 4×4 array of wide-scan patch antennas, and a compact, rugged, micromachined three-dimensional structure for rf and dc interconnect and thermal management. The subarray tile is fabricated using...
The convergence and miniaturization of the consumer electronic products such as cell phones and digital cameras has led to the vertical integration of packages i.e., 3-D packaging. 3-D chip stacking is emerging as a powerful tool that satisfies such Integrated Circuit (IC) package requirements. 3-D technology is the trend for future electronics, especially hand-held, hence, making it an important...
This work addresses a built-in self-test methodology for circuit cell identification under specific matching conditions. The proposed technique is applied to the CMOS realization of a reduced-KII network, which is a system model of the biological olfactory cortex. This model behaves as an associative memory, a useful tool for information and adaptive processes. Based on a mixed-signal approach, the...
This paper presents 3D-interconnect technology to produce a variety of structures and packages suitable for high end electronics. 3D-interconnect can join different size multiple rigid structures for rigid-rigid constructions. For example, a high density circuit card and a low end printed wiring board were attached using 3D-interconnect to achieve functionality similar to a complex board. Various...
A new sidewall interconnection using perpendicular circuit die is implemented in this work; this device can be applied to fabrication of chip stacks. Experiments were conducted by stacking four chips each having a thickness of 200μm; the configuration of the pad on the test chip is similar to that of a memory chip. The chips for stacking were fabricated successfully by dicing the wafer. Vertical interconnection...
Higher performance, higher operation speed and volume shrinkage require high 3D interconnect densities. A way to meet the density specifications is to further increase the A.R. of the TSV interconnection. This requires the integration of highly conformal thin films deposition techniques in TSV flows, particularly for metallization. In this study, seed layer enhancement is applied to regular PVD Cu...
A novel packaging module is described that is based on co-integration of flexible micro-spring interconnects with through silicon copper vias (TSVs) into a passive large area silicon interposer. We report on the packaging test vehicles based on such interposers that are designed to demonstrate a wafer scale integration process to form TSV+spring interconnects with high yield and low resistance. Our...
The shrinkage of the pitches and pads at the chip to package interface is happening much faster than the shrinkage at the package to board interface. This interconnection gap requires fan-out packaging, where the package size is larger than the chip size in order to provide a sufficient area to accommodate the 2nd level interconnects. eWLB is a type of fan-out WLP that has the potential to realize...
Three-dimensional (3D) chip integration with through-silicon-vias (TSV's) can enable system benefits of enhanced performance, power efficiency, and cost reduction leveraging micro-architecture designs such as 2.5D silicon packages and 3D die stacks. 2.5D silicon packages and 3D die stacks structures integrated in modules each have unique technical challenges but each can provide system benefits including...
As the progress of the packaging technology for the electronic consuming devices, the customer demands more and more. From the trend of the development on electronic devices, it shows that these demands require for more functions or higher density of devices within a limited space. By the capabilities of the 3D-IC technology, it could support such a design with multi-purposes including a smaller size,...
Since interconnection has become an essential component in high-speed integrated circuits (IC), it is of great importance to explore and investigate its electrical characteristics. This paper is summarized our recent work on high-speed interconnection in both 2D planar IC and 3D IC. First, we have build up distributed circuit model for differential microstrip line and vias system, then crosstalk of...
The attenuation constant of interconnects fabricated in foundry and post-CMOS processing are compared up to 110 GHz. Two dielectric materials with thicknesses less than 10 microns are deposited on a lossy silicon (Si) substrate. The interlayer dielectric (ILD) from 180 nm TSMC and benzocylobutene (BCB) are used to characterize losses measured on coplanar waveguide (CPW) and grounded CPW (GCPW) at...
The interposer-based 2.5D technology has some advantages that are provided in the 3D technology, such as low interconnect delay, and high bandwidth, etc. In addition, the 2.5D technology can mitigate area overhead of TSVs and help reduce the temperature and binding cost. An extra interposer layer, however, is introduced for interconnect in a 2.5D design. With 2D, 2.5D, and 3D design options, the fabrication...
Power supply impedance and simultaneous switching output (SSO) noise for a 3D system-in-package (SiP) with a wide bus structure have been investigated. The 3D SiP consisted of 3 stacked chips and an organic package substrate. These three chips were a memory chip on the top, Si interposer in the middle, and a logic chip on the bottom. The size of each chip was the same, and 9.93 mm by 9.93 mm. More...
Advances in interconnect technologies, such as the increase of the number of metal layers and 3-D stacking technique, have paved the way for higher functionality and superior performance while reducing size, power, and cost in today's integrated circuits and package products. With the increase of clock frequency and edge rates as well as the continuously downscaling of feature size and 3-D interconnect...
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