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Wafer-scale three-dimensional (3D) technologies beyond post-scaling, known as Wafer-on-Wafer (WOW), have been developed for high-density integration. WOW consists of four technology modules: wafer thinning, stacking, through-silicon-via (TSV) interconnects without bump electrode pads, and packaging. All modules are carried out at the wafer scale. No degradation for advanced 35-nm SRAM logic and FRAM...
Since the conventional planar ICs encountered many physical, technological and economic bottlenecks, 3D integration by stacking and connecting function blocks in a vertical fashion is regarded as a viable approach to alleviate such bottlenecks. Through-strata-via (TSV) is one of the most attractive 3D integration solutions, which offers a massive number of short interconnects, high bandwidth, reduced...
For the past thirty years, the downscaling has been the guiding principle in the field of High-density semiconductor memories. However, recently, the limit of planar bulk MOSFETs is becoming apparent. Therefore, in order to extend the scalability of memory technology to the nano-scale generation, a new device structure is necessary. From the viewpoint, I will discuss future High density Memory with...
An analytical model is presented for the 3D subthreshold electrostatics of low-doped gate-all-around MOSFETs with circular and square cross sections. The model is based on a solution of the 3D Laplace equation utilizing the high symmetry of the devices and assuming near-parabolic potential distributions in the directions perpendicular to the gates for the central regions. To account for short-channel...
A silicon-interposer technology with high density Cu-filled TSVs and Cu-based redistribution layers was realized. Test structures in a process control module were used for electrical characterization.
We report recent advances in tool and process hardening of a first of its kind 300 mm wafer-to-wafer (WtW) preprocessing, aligning, and bonding integrated tool. We have demonstrated sub-500 nm post-bond alignment accuracies for 300 mm WtW face-to-face (FtF) Cu-Cu thermocompression bonds, WtW FtF Si-Si fusion bonds, and WtW FtF oxideoxide fusion bonds. All process of record (POR) recipes that were...
Exposed pad packages were first introduced for their superior electrical and thermal performance. Some of the exposed pad packages do include a separate ground ring structure that is situated between the die pad and inner end of the leads. The ground ring is directly connected to the exposed pad. Multiple ground wires can then be bonded on the ground rings without the need to increase the pin count...
In this study, we report a new concept of through silicon via for 3D applications requiring ultra-low coupling capacitance. The challenges linked to the integration of such structure, as well as preliminary results on stress level and distribution in the TSV are addressed in details below.
In 3D integrated circuits through silicon vias (TSVs) are used to connect different dies stacked on top of each other. These TSV occupy silicon area and have significantly larger area than regular gates. In this paper, we address two critical aspects of TSV management in 3D designs. First, we address the problem of how many TSVs to add in a design. Since TSVs occupy significant silicon area, a general...
The existence of optimal data rates for minimum energy per bit performance in electrical links suggests that dense system connectivity options potentially enabled by 3D integration and photonics are required for future processing platforms.
We have developed a full three-dimensional real-space quantum transport simulator for p-type nanowire field effect transistor. The model is based on a six-band k·p Hamiltonian expressed within the non-equilibrium Green's function formalism. Based on this simulator we have studied the influence of a single donor and acceptor dopant on the transport properties. Numerical calculations show that an acceptor...
A 3D, through silicon via microelectronic process, capable of face-to-face assembling two 130 nm CMOS tiers in a single bi-layer wafer, has been exploited for the design of monolithic active pixels (MAPS), featuring a deep N-well (DNW) collecting electrode. They are expected to improve on planar CMOS DNW MAPS in terms of charge collection efficiency since most of the PMOS transistors in the front-end...
The balanced graph partitioning consists in dividing the vertices of an undirected graph into a given number of subsets of approximately equal size, such that the number of edges crossing the subsets is minimized. In this work, we present a multilevel memetic algorithm for this NP-hard problem that relies on a powerful grouping recombination operator and a dedicated local search procedure. The proposed...
In today's integrated circuits, power consumption has become the most important factor, and must be seriously investigated among the various performance metrics. In this study, power estimations for various through-silicon via (TSV)-based three-dimensional integrated circuit (3D IC) designs were conducted in efforts to realize low-power-consumption 3D IC. In addition, the dominant power-consuming...
We laser-micromachined hole arrays into silicon with aspect ratios up to 100:1. Direct laser-drilling and trepanning were used. Since laser-machining leaves a damaged silicon region that is not suitable for detector fabrication, we removed the damaged silicon with an isotropic xenon difluoride etch step. Hole arrays with trepan drilled holes had lower leakage currents. We successfully collected a...
For the demands of multifunction, high density interconnection, high performance and integration of homogeneous or heterogeneous ICs, three dimensional IC (3DIC) packaging technologies by through silicon via (TSV) and microbump were widely studied recently. Intending to learn the reliability performance of Pb-free microjoints, 4 chips were interconnected with one Si interposer by Sn2.5Ag microbumps,...
As electronics manufacturing is now starting to utilize the 3rd dimension there are two very different approaches: 3D Silicon in wafer fabrication and 3D Packaging using a lot of existing and new technologies. This paper tries to show that there are almost unlimited opportunities for different packaging technologies for 2.5 and 3D. For optimal results both the semiconductor industry and the packaging...
Three-dimensional integrated circuit (3D IC) technology has become a popular research topic to further enhance the integration scale as well as reduce the interconnection cost. However, the high power density and the poor heat conductivity of the internal layers of the 3-D structure result in high temperature and this becomes a critical design issue of 3D IC technology. Many heat removal methods have...
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