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All-wet fabrication process using electroless deposition of barrier and Cu seed layers has been achieved for a high aspect ratio through-Si via (TSV). Formation of thin barrier metal layer of NiB and CoB is possible by the use of nano particles catalyst which is densely adsorbed on SiO2 of TSV sidewall. Silane coupling agent with 3-aminopropyl-triethoxysilane is effective for enhancement of adsorption...
A novel hydrogen gas sensor based on platinum titanium-oxygen (Pt-Ti-O) gate silicon-metal-insulator semiconductor field-effect transistors (Si-MISFETs) was developed. The sensor has a unique gate structure composed of titanium and oxygen accumulated around platinum grains on top of a novel mixed layer of nanocrystalline TiOx and super heavily oxygen-doped amorphous titanium formed on SiO2/Si substrates...
In situ SiO2-doped SnO2 thin films have been prepared by liquid phase deposition method. The effect of SiO2 additive on the surface morphology and crystalline structural of the thin films were investigated by grazing incident angle X-ray diffraction (GIAXRD) and scanning electron microscopy (SEM). In the characteristics of sensing response, the SiO2-doped CuO Au-SnO2 gas sensors (Si/Sn = 0.25 and...
This work presents the properties of nanocrystalline SiC(nc-SiC) films prepared by plasma enhanced chemical vapour deposition. A p-type silicon wafer with resistivity 2-7 Ωcm and (100) orientation was used as the substrate for the nc-SiC:H films. The concentration of species in the SiC films was determined by RBS and ERD. Chemical compositions were analyzed by IR spectroscopy. Film morphology was...
Polyimides (PI) are widely used in microelectronic industries because of their outstanding characteristics such as good mechanical, thermal and dielectric properties. In this paper, a novel PI/SiO2-Al2O3 co-doped composite film was prepared. The inorganic phases of SiO2 were added to PAA solution by sol-gel method with TEOS as precursor, while the Al2O3 phase was added as particles by ultrasonic-mechanical...
We demonstrated high-performance complementary voltage inverters based on top-gated carbon nanotube field-effect transistors (CNTFETs) with SiNx passivation films. The carrier type of CNTFETs was controlled by forming condition of SiNx passivation films. Complementary voltage inverters comprising p- and n-type CNTFETs were fabricated on the same SiO2 substrate. The static transfer and noise margin...
This paper reports measurements of the electrical resistance and resonant frequency of VO2-coated silicon dioxide (SiO2) bridges when the coating's insulator-to-metal transition (IMT) is thermally induced by conduction. The measurements of these two properties were done simultaneously. The decrease in electrical resistance was close to three orders in magnitude. The resonant frequency shift across...
GeSiO nanosystems were obtained using two different preparation methods, sol-gel and magnetron-sputtering. Transmission electron microscopy measurements were performed to investigate the films structure. Amorphous and crystalline Ge dots embedded in amorphous silicon dioxide were observed. The Ge concentration in the GeSiO films was by Energy-dispersive X-ray spectroscopy.
In this work we present a characterization of PECVD (plasma-enhanced chemical vapour deposition) amorphous silicon carbide films for MEMS/BioMEMS applications. For this applications a high deposition rate and a controllable value of the residual stress is required. The influence of the main parameters is analyzed. Due to annealing effect, the temperature can decrease the compressive value of the stress...
The electronic properties of thin film low-κ interlayer dielectric (ILD) and etch stop layers (ESL) are important issues in present day ULSI development.1-6 Low-κ ILD and ESLs with dielectric constants significantly less then those of SiO2 and SiN are utilized to reduce capacitance induced RC delays in ULSI circuits. However as the semiconductor industry looks to transition to 16 nm and beyond technology...
This work addresses the use of HfO2 as trapping layer in TaN/Al2O3/HfO2/SiO2/Si (TAHOS) stacks for scaled non-volatile memories, by a complete characterization of the physical properties as a function of thermal budget and film thickness and of the program characteristics, with the aim of a benchmarking with the conventional Si3N4 (TANOS). The TAHOS stack withstands high temperature budget (>1000°C)...
We have developed a low leakage and highly reliable SiON gate dielectrics by using novel low temperature deposition of chlorine-enriched silicon nitride upon a thin oxide. This method can achieve higher top-to-bottom nitrogen concentration ratio and keep nitrogen peak toward top surface. It was found that the low temperature Si3N4 deposition technique can form a high nitrogen percentage SiON (>...
We discuss a result of corrosion and Anodic Oxidation occurring on anode of silicon carbide electrodes in this paper. Electrode behavior are investigated to produce a evaluation of oxidation. In the final we discussed the effects of film stress that produced by anodic oxidation, and suggestions to prevent corrosion are also be presented here.
A topography simulation of BiCS memory hole etching is performed. The model parameters are fitted by elementary experiments of Si and SiO2 etching, and BiCS topography simulation is performed without parameter fitting. Our new model describes the experimental topography of BiCS memory hole, including taper angles and undercuts of stacked films. The point of the modeling is that it takes into consideration...
A series of molecular dynamics (MD) simulations is conducted to investigate the dynamics of longitudinal optical (LO) phonon in Si nano-structure confined with oxide films. This work is motivated by heat issues in nanoscopic devices; it is considered that the LO phonons with low group velocity are accumulated in the nanoscopic device and the electric property deteriorates. We estimate the relaxation...
TiN diffusion barrier layers were deposited on SiO2/Si substrate by ALD method that employed TiCl4 and NH3 as the source and reactant gases, respectively, at a temperature range between 350°C and 500°C. Properties of films, including deposition rate, resistivity, surface roughness and chemical composition, were investigated, and performance of TiN diffusion barrier layer was also verified. Deposition...
This paper presents analysis on parameters required for the fabrication process of RF MEMS switches. Stress analysis on gold thin film and variation of stress with different deposition conditions has been studied. Adhesion issues which occurred during the fabrication have also been high lighted. While fabricating the RF MEMS switch the suspended cantilever beam or membrane can touch the lower actuation...
The writers are developing the production process device of thin-film material for the flexible solar cells using the high-frequency plasma chemical vapor deposition (CVD) method. In order to clarify the characteristics of the device, plasma treatment is applied on the Si wafer surface and basic characteristic of plasma is found by the analysis of the B doped p-type (100) Si wafer surface using X-ray...
The area of gate metrology in the semiconductor fabrication process is being challenged with stringent thickness and composition control requirements. Control of component thicknesses and compositions of nitrided gate oxides and complex Hi-K film stacks has become a critical requirement for process development and control. Implementation of lab based techniques like XPS, XRF, XRR, SIMS, EXES etc....
In this paper, we investigated a novel and unique, high throughput, inline XPS technique for thin film (<; 100 A) measurements, such as SiON and HfO2. Inline XPS measurement capability was evaluated using four separate techniques; offline SIMS, offline XPS, inline ellipsometry and inline micro X-ray fluorescence (XRF). A Nitrogen sensitivity test determined that the detection limit was on the order...
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