The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
In this study, a novel Flowable CVD process using non-carbon silicon based precursor has been developed for gap filling in 450mm wafer level, sub-20nm STI structure. To achieve 450mm wafer with aspect ratio 5:1 STI structure, guided DSA patterning and a-carbon hard-mask are applied. The various conditions have been screened in deposition, cure and anneal processes in order to result a void free and...
As dimensions shrink with each successive semiconductor technology node, the critical size of defects that can impact yield also shrinks. Monitoring the health of process equipment rigorously and regularly for key sources of contamination must be performed. Comparison of the critical feature size per technology node with the typical defectivity size used for process control shows a widening disparity...
This paper presents a flexible printed circuit board (FPCB) actuator-driven micromirror (referred to as FPCB micromirror hereafter)-based laser projection indicator. The device integrates two FPCB micromirrors, one red laser, one green laser, a dichroic laser combiner, and driving/control circuit. It generates and projects red or green static or rotating laser pattern on a remote translucent film...
Zeolite porous films have been produced by spin coating deposition at low temperature according to a procedure fully compatible with integrated circuit technology. Optical polarization properties of the deposited film have been studied by the modulation-polarization spectroscopy technique. Low-dielectric properties and internal porosity structure of the zeolite on Si wafer can be obtained. The aspects...
In this paper, anodic aluminum oxide (AAO) is introduced as a potential new material for making interposers, and a low cost process for building high density interposers is demonstrated. Hard anodic process was used to create thick anodic aluminum oxide (AAO) films containing high density vertical nanopores on aluminum substrates. Silicon dioxide (SiO2) deposition by plasma enhanced chemical vapor...
Through silicon vias are key components in 2.5D and 3D microelectronic packaging. Deep silicon etching is the critical step in fabrications of TSVs. Uniform metal-assisted chemical etching (MaCE) has been considered as a promising method to the conventional deep reaction ion etching for deep silicon etching. In this paper, we demonstrated that the uniform MaCE method is capable of fabricating vertical...
Flip chip interconnects purely made out of Cu, so-called all-Cu interconnects, have the potential to overcome the present current capacity limit of state-of-the-art solder based interconnects, while meeting the demand for ever decreasing interconnect pitches. Parasitic effects in solder based interconnects, caused by interdiffusion of various metals, are mitigated in all-Cu interconnects. In this...
Semiconductor packages undergo mechanical loading at various stages of the manufacturing, assembly and test process. Also, during the assembly of the thermal enabling solution in a system environment, mechanical loads are applied to ensure contact of the thermal solution. These loads can be static and/or dynamic in nature, applied over a short or long periods of time. It is important to characterize...
Modeling and controlling of warpages and layout-dependent local-deformations are challenges to overcome to realize 3D stacking of dies with through-silicon vias and micro-bumps. Dies larger than about 500 mm2 are now being used for high performance computing, and large cylindrical warpage of the die and local die surface deformations can greatly affect the yield and reliability of the stacked dies...
This paper presents buckled nitride thin-film encapsulation using anti-adhesion layer assisted transfer technique and BCB/nitride bilayer wrinkling due to elastic property mismatch between the two attached materials. A 900 nm silicon nitride film is deposited on a Si carrier wafer coated with hydrophobic monolayer and then non-patterned nitride film is directly bonded to BCB sealing rings prepared...
We improved a through-silicon via (TSV) revealprocess comprising direct Si/Cu grinding (simultaneousgrinding of Si and Cu) and residual metal removal. In thisimproved process, direct Si/Cu grinding was performed byusing a novel grinding wheel (vitrified-bond type) and cleaningthe wheel with a high-pressure micro jet. Instead of electrolessNi-B plating, electroless Sn plating was then performed tocover...
In this paper the linear temperature coefficient of frequency in bulk-extensional MEMS resonators is reduced utilizing a relatively thin layer of sputtered Fluorine-doped silicon dioxide (SIOF). The Fluorine doping is achieved through addition of a Fluorine-containing gas in the Ar/O2 gas mixture of a typical SiO2 RF magnetron sputtering process. Our preliminary results indicate that the temperature...
We developed a simple structure that can enhance the local electric field thus reduce the forming and SET/RESET operation voltage for WOx ReRAM. Si-doped W film is used to further increase the initial resistance and improve the reliability properties. TCAD simulation shows that the field enhanced structure provides an equivalent electrical field that would only be achieved by very small conventional...
We evaluated anisotropic biaxial strain induced in silicon channel region of metal-oxide-semiconductor field effect transistor (MOSFET) as well as novel channel or source/drain materials such as silicon germanium (SiGe) and germanium tin (GeSn) using liquid-immersion Raman spectroscopy. Uniaxial stress in Si channel region predicted by the simulation was well reproduced by Raman measurement. For the...
In this work, we present a newly titanium-contained periodic amorphous carbon(a-C) composite films by magnetron sputtering process on silicon (100) substrate which has lower intrinsic compressive stress that can be used in electrical modulation pulsed MEMS infrared(IR) source for NDIR gas sensors. The fabrication process, results, performance and results analysis are then carried out.
This paper presents a cost-effective method to transfer vertically aligned carbon nanotubes (VA-CNTs) with Poly(dimethylsiloxane) (PDMS). Here, in this process, we take the advantage of PDMS solution as the transfer medium, meanwhile utilize the good wetting of this solution on another cured PDMS film to realize efficient transfer. The SEM images of transferred CNTs were taken to characterize the...
In this paper the evolution of microstructures and its impact in Al-ZnO as deposited thin film on different substrates such as Si, SiO2, Polyimide, Glass by using DC sputtering at 400W in presence of argon flow 30 sccm are investigated. The XRD of the films suggests that the deposited films are polycrystalline hexagonal wurtzite Al-ZnO. The Hall Measurement data reveals no more change in the carrier...
The frequency variation of solidly mounted resonators made with AlN thin films operating in longitudinal and shear acoustic modes with induced in plane mechanical strain is presented. The induced deformation range is in the hundreds of microstrains and the frequency variations in the hundreds of kHz, giving coefficients of resonant frequency with deformation in the order of 56% per unit strain. The...
Wire bonding as well as wafer probing can lead to oxide layer cracking. In combination with metal migration electrical failures may occur. Loading conditions comparable to the wire bonding process can be achieved using a nanoindenter. In this work a spherical tip has been used at first to determine material properties of the silicon nitride film and also to attain cracking of the film material. Based...
We present technological results on the embedding of ultra-thin microcontroller ICs in flexible film substrates. The novel concept is based on the following technologies: face-up chip mounting in cavities on film laminates, photo-lithographic patterning of vias and interconnects embedding in polymer layer and compatibility with both sheet and roll-to-roll processing. The paper briefly reviews the...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.