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Millimeter-wave on-off keying (OOK) modulator for wireless inter-chip communications is proposed. The proposed modulator not only has a wide bandwidth which allows the high speed modulation but also operates with a low power consumption enhancing the power efficiency and assures the inter-chip communication. With wide bandwidth and the OOK modulation scheme, it can process data having 12 Gbps while...
An electronic THz transmissive imaging system is presented in this work. This system is composed of a CMOS signal source, a CMOS signal sensor, lenses, and commercial electronic chopping components. The output frequency of the signal source is 339 GHz, and the responsivity of the signal sensor is 200 kV/W. The total dc power consumption of those CMOS circuits is 91.02 mW. Using electronic chopping...
A Watt-level mm-wave digital polar transmitter (DPT) architecture, supporting high speed complex modulation schemes with high average efficiency, implemented in a SiGe HBT process is discussed in this paper. Design and implementation details of several blocks used in this digital polar transmitter including high power, high efficiency mm-wave Class-E power amplifiers and high speed modulators are...
Technology scaling, which has enabled operation at mmWave frequencies in CMOS, has also brought with it a steady decrease in the breakdown voltages of the transistors. The resulting fall in output power of power amplifiers (PAs) combined with the low efficiency due to poor device gain and lossy passive components has led to research efforts towards efficient yet linear high output PAs at mmWave. This...
This paper presents the design of a BJT-based remote temperature sensor to measure ambient temperature in different locations. The sensor chip supplies a calibrated current to the external devices, which are common off-the-shelf bipolar junction transistors — 2N3904 (NPN) and 2N3906 (PNP), and converts their base-emitter voltages to temperature using a 13-bit charge-balancing ΣΔ modulator. Dynamic...
An area-efficient hybrid ΔΣ modulator with a 6-bit shared asynchronous successive approximation register (ASAR) quantizer for audio application is proposed and demonstrated in a 28nm CMOS process. The modulator incorporates a 1st-order analog filter and a 1st-order digital filter, which enables high integration of digital signal processing at low power and small area. The 1st-order digital filter...
This invited paper exposes our latest developments in the field of digital transmitters by focusing on digital and mixed-signal processing blocks, such as delta-sigma modulators, high-speed interpolation filters and digital-to-RF converters. The goal is to demonstrate that radio-frequency signal generation by mostly-digital means is competitive and not so far from being a realistic option. It will...
This paper describes a fully integrated E-band transmitter (TX) in 40-nm CMOS. Circuit, layout and calibration techniques are presented to suppress the LO feed-through (LOFT) and I/Q imbalance over both 71–76 and 81–86 GHz bands. A systematic design methodology is proposed for the millimeter-wave poly-phase filter (PPF) to achieve lowest I/Q imbalance with minimum EM simulations. The 40-nm E-band...
We propose a novel low-power CMOS circuit to monitor the optical modulation amplitude of a Si ring modulator, and successfully demonstrate its operation in a wire-bond integrated CMOS Si photonic ring transmitter.
Bootstrapping techniques improve the linearity of switched-capacitor circuits, especially for low supply voltage. This paper proposes simple but effective techniques for bootstrapping floating switches. The method is applicable to such fundamental circuits as sample-and-hold (S/H) stages, switched-capacitor (SC) filters and SC amplifiers. It can make the onresistance and channel charge of the switches...
This paper discusses and shows the use of Nauta operational transconductance amplifiers as integrator elements in a second-order continuous-time delta-sigma ADC. The structure is studied in order to take advantage of its potentially high bandwidth operation and simple inverter-based structure for wide output voltage range in current and future CMOS process. The second-order continuous-time delta sigma...
An envelope tracking power amplifier (ET PA) using a standard CMOS process for the 3GPP long-term evolution mobile terminals is presented. An efficiency of the CMOS power amplifier for the modulated signals can be improved combining with a highly efficient and wideband CMOS bias modulator. The CMOS PA has a two-stage differential common-source structure for high gain and large voltage swing. The bias...
A 10-Gb/s 6-Vpp differential Mach-Zehnder modulator driver is implemented in 65-nm CMOS technology. The proposed modulator driver adopts a triple-stacking topology with a dynamic biasing to generate the differential voltage swing of six times as much as the nominal supply. The modulator driver occupies only 0.04 mm2 without using inductors for area efficiency. The measurement results show an operating...
A 23mW, 80MHz BW, 73dB dynamic range continuous-time ΔΣ modulator in 20nm CMOS is presented. The modulator operates from 1.0/1.2/1.5V supplies. Power is minimized by combining a low OSR, fast digital excess loop delay compensation scheme, and several techniques to minimize delay in the feedback path. The result is a highly power efficient modulator that achieves an FOM(DR) of 168dB.
A highly linear and efficient 1-bit digital transmitter with envelope ΔΣ modulation (EDSM) is presented. Analyses and simulations reveal that the EDSM scheme is robust for distortion in output waveforms, and this has been experimentally verified using a CMOS EDSM IC and a GaN class-D PA for the 700-MHz band. The transmitter achieves an average ηD of 56.3% and an ACLR of −39 dBc for a 5-MHz BW and...
We present a new Charge Based Capacitance Measurement (CBCM) CMOS sensor for Lab-on-Chip applications. This integrated capacitive sensor consists of a fully differential capacitance to voltage converter, a sigma delta (ΣΔ) modulator, and interdigitated electrodes realized on top metal layer in 0.35 µm CMOS process. The proposed CMOS capacitive sensor offers higher dynamic-range (10 fF) and sensitivity...
We propose a low-power millimeter-wave ultra-wideband impulse radio (UWB-IR) transmitter using an on/off keying (OOK) pulse modulator for wireless connection or dielectric-waveguide interconnects. To achieve low-power consumption, we use a low-power OOK pulse modulator consisting of only four CMOS inverters and passive elements. The proposed transmitter was fabricated in 65-nm CMOS technology. It...
In this paper, an extra loop delay compensation technique for hybrid delta-sigma modulators (DSM) is proposed. The hybrid DSM replaces analog components with digital circuitry by carrying out A/D conversion in the middle stage of a loop filter. The hybrid DSM is a small-sized prototype that realizes A/D conversion with low power consumption. In many cases, A/D converters exhibit latency, which becomes...
This paper presents a design and technique for low noise, low offset modulation demodulation circuit for chopper stabilized amplifiers use in CMOS-MEMS sensor applications. In these sensors, where the sensed signals are usually very weak, a low-noise interface readout circuit plays a crucial role in determining the overall sensor performance and success in the market. Amplifiers are the core building...
This paper presents a multi-bit, continuous time delta-sigma modulator with 20 MHz bandwidth implemented in 65nm CMOS for cellular communication. The modulator features a third order, single loop filter and a 4-bit internal quantizer operating at 640 MHz. The DACs are resistive for lower thermal noise compared to the current-steering DACs and nonreturn-to-zero DAC pulse is used to reduce the clock...
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