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Vulnerability of a variety of components for particle accelerators electronics to single event effects, total ionizing dose and displacement damage has been analyzed. The tested parts include analog, linear, digital, and hybrid devices.
We present an improved model relating the frequency shift between 133Cs hyperfine Zeeman substates to the Lorentz-violating coefficients of the Standard-Model Extension (SME) framework. This model is based on a second order boost Lorentz transformation, which enables us to constrain the isotropic coefficient CTT. It also takes into account the nuclear structure, beyond the usual Schmidt model, extending...
Heavy ion and proton single event effects characterization data on BAE Systems RADNET 1848-PS Application Specific Standard Product are presented. The RADNET 1848-PS is a Serial RapidIO packet switch capable of running at rates up to 3.125 Gbaud. An at-speed SRIO network test for SEE cross section measurement is used to estimate soft error rates for observed upset modes in a reference orbit environment.
Single-event effect (SEE) radiation test results are presented for various trench-gate power MOSFETs. The heavy-ion response of the first (and only) radiation-hardened trench-gate power MOSFET is evaluated: the manufacturer SEE response curve is verified and importantly, no localized dosing effects are measured, distinguishing it from other, non-hardened trench-gate power MOSFETs. Evaluations are...
We report summary test results of commercially available GaN HEMT RF power devices from Cree and Qorvo, Inc., with 1.8 MeV protons in three operational modes. Tested parameters include threshold voltage, transconductance, and S-parameters representative of RF/power performance. Thermoelectric cooling was used to minimize thermally induced parametric shifts.
Commercial off-the-shelf 12-Megapixel CMOS image sensors were irradiated with 105 MeV protons — one part to a fluence of 4×1011 protons/cm2, and a second part to 2×1011 protons/cm2. Pixel brightness increases with fluence along with annealing effects are reported. No latch-up events or hangs occurred.
This paper reports on the calculation of proton SEU cross section from heavy-ion data in GaAs devices. A number of different models are used, however in each, accommodations must be made to account for the fact that the density and ionization energy of GaAs differs from that of Si. Model accuracy is checked using data on proton and heavy-ion cross sections from the published literature.
Experimental assessment of commercial 100/200 Gbps optical coherent DSP modem ASIC completed with 64 MeV and 480 MeV proton radiation test campaigns. Single event effect cross sections calculated and no performance degradation observed for proton fluence levels up to 1.27×1012 p/cm2 with equivalent total ionizing dose exposure to 170 krad(Si).
We report proton testing of a position measuring system, the Kaman KD-5100, with applications including mirror positioning for laser beam control. We measure a device response likely due to total ionizing dose and/or displacement damage.
SEE test results are presented for proton, neutron, and heavy ion testing of the Qualcomm Snapdragon 820 and its support DDR4 device (in this case the SK Hynix 24 Gb LP DDR4 device H9HKNNNDGUMUBR-NMH). Processor crashes and DDR4 stuck bits are the primary SEE types for protons and neutrons. Test preparation difficulties and software limitations caused test efforts to be limited to processor crashes,...
This paper examines the single-event effect response of the Xilinx 16nm FinFET XCZU9EG Zynq® MPSoC irradiated with neutrons, 64 MeV protons and thermal neutrons sources. A 16nm FPGA-like test chip was also built for alpha foil testing. Results for single-event upsets on configuration RAM (CRAM) cells and block RAM (bRAM) cells are provided for the programmable logic. In addition, the 1st· Xilinx 16nm...
Total ionizing dose and displacement damage testing was performed to characterize and determine the suitability of candidate electronics for NASA space utilization. Devices tested include optoelectronics, digital, analog, linear bipolar devices, and hybrid devices.
Heavy ion latch-up test on Microchip microcontroller dsPIC30F6014A has been performed in order to analyze its suitability for ExoMars 2020 mission. The estimation of SEL rate shows the applicability of the microcontroller for non-critical functions.
The Neutral and Ion Mass Spectrometer onboard ESA Jupiter mission JUICE employs thick-film resistors (from ∼1 Ω to ∼1 MQ), screen-printed on ceramic elements, to realize high-voltage ion optical elements and decontamination heaters. Despite the relevant space heritage, these materials were never employed before in a radiation environment comparable to Jupiter's magnetosphere. With this study, we prove...
We performed proton and heavy-ion testing of the Microsemi Igloo2 FPGA using several basic designs looking at the logic, embedded SRAM, and mathblocks as well as any SEFI or high current states.
Earlier P2020 SEE data are compared and expanded to a recent die revision, significantly increasing samples tested by protons by five devices, and by heavy ions by five devices. Earlier tested SEE types are found to be fairly similar in register, L1 cache, L2 cache, and CPU crashes. New test methods give SEE performance for the flash memory controller, watchdog circuit, and a built-in Ethernet port...
This paper examines the single-event upset response of a customer memory interface design on the Xilinx 20nm XCKU040 Field Programmable Gate Array (FPGA) irradiated with 64MeV proton source. Results for single-event upsets on configuration RAM (CRAM) cells are provided. The difference between architectural vulnerability factor (AVF) and design vulnerability factor (DVF) of the customer memory interface...
Proton induced SEU cross-sections of the SRAM which stores the logic configuration and certain functional blocks of the Zynq UltraScale+ MPSOC are presented. Upset rates in the space radiation environment are estimated.
Vroton induced SEU cross-section of DSP cores within the KeyStone™ II system-on-chip 66AK2L06 is presented. Upset rates in the space radiation environment are estimated.
We present the results of Single Event Effects (SEE) testing with high energy protons and with low and high energy heavy ions for electrical components considered for Low Earth Orbit (LEO) and for deep space applications.
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