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Commercial off-the-shelf 12-Megapixel CMOS image sensors were irradiated with 105 MeV protons — one part to a fluence of 4×1011 protons/cm2, and a second part to 2×1011 protons/cm2. Pixel brightness increases with fluence along with annealing effects are reported. No latch-up events or hangs occurred.
Experimental assessment of commercial 100/200 Gbps optical coherent DSP modem ASIC completed with 64 MeV and 480 MeV proton radiation test campaigns. Single event effect cross sections calculated and no performance degradation observed for proton fluence levels up to 1.27×1012 p/cm2 with equivalent total ionizing dose exposure to 170 krad(Si).
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