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In this paper, we report a newly developed compact model HiSIM-GaN [Hiroshima University STARC IGFET Model for GaN high electron mobility transistors (HEMTs)] including a capacitance model, which accurately captures the contributions originating from the device's field plate (FP) structure. The capabilities of the reported model are demonstrated by reproduction of the measured power efficiency of...
In this contribution, a design, implementation, and experimental results of a highly efficient, multi-octave bandwidth power amplifier (PA) using a 25 W packaged GaN-HEMT are presented. Source/load-pull setup is used to extract the optimum source/load impedances across 1.1 – 2.7 GHz. The harmonics impact is considered to improve the power amplifier efficiency. Utilizing the characteristics of FET...
To achieve high power-density isolated dc-dc converter, gallium nitride high electron mobility transistors (GaN-HEMTs) and planar transformer have been used. Also, for the high power-density design, these components are placed close to each other. GaN-HEMTs are significantly affected by the leakage flux of the planar transformer, because of their lateral structure. Therefore, the mutual effects of...
This paper presents a two-stage PA MMIC using 0.4-μm GaN-HEMT. Two-stage structure is adopted to take its high gain property and simple inter-stage matching network. The size and loss of the inter-stage matching network can be reduced by including bond wires as a part of the shunt inductors in the matching network. The two-stage PA MMIC was fabricated with a size of 2.0#x000D7;1.9 mm2 and was mounted...
AlGaN/GaN high electron mobility transistors (HEMTs) have attracted considerable attention on high power - high frequency switch applications. With the aim to optimize the switching performances, in this paper the comparison between traditional Schottky and alternative MIS solution for Single-Pole Double-Throw (SPDT) switching circuit working in the Ka band will be presented, enhancing the benefits...
A hybrid cascoded GaN switch configuration is demonstrated in power conversion applications. A novel metal package is proposed for the packaging of a D-mode GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT) cascoded with an integrated power MOSFET and a Schottky barrier diode. The normally-off cascode circuit provides a maximum drain current of 14.6 A and a blocking capability...
The effects on the EMI spectrum for various switching frequency modulation (SFM) scenarios in a high frequency boost converter are investigated in this paper. A GaN-device and a Si-device are compared with respect to their EMI behavior, which results from different gate charges and therefore different voltage gradients dv/dt on the power lines. First, the dynamic characteristics of the GaN-HEMT are...
Researchers usually focus on developing and designing power amplifiers with high efficiency but ignore to keep the balance between input and output of circuit parameters which can be serious in fabrication process as small error in large elements can consume very small corresponding elements. The objective of this research is to design a power amplifier with balanced input and output. The designed...
In this work, an analytical approach to the design of high isolation dual-gate GaN-HEMT single-pole double-throw (SPDT) switches is presented. An R-C-R circuit is used as a band-rejection filter at the specified frequency in the OFF-state in order to realize the high isolation performance. Simulated performance of a complete SPDT using the proposed approach is presented. From DC to 3 GHz, the simulated...
In this paper, a high power, high efficiency and wideband two-stage GaN-HEMT power amplifier (PA) is presented and illustrated together with the design, implementation, and measured results. The scope of the design was to build broadband input-, interstage-, and output-matching networks based on source-/load-pull simulations and a systematic approach. The large-signal measurements indicate that the...
In this paper, the influence of channel frequency in the RF-band on digital predistortion (DPD) is investigated empirically. A class-AB GaN-HEMT power amplifier targeting the 3.5 GHz band for WiMAX is used with a 20 MHz OFDM signal. It is found that frequency dependent memory effects in the band have a strong impact on the amount of memory taps needed for the DPD predistorter model. The overall characteristic...
AlGaN/GaN based double heterosturcture high electron mobility transistor (HEMT) structures were grown on GaN buffer/Si(111) substrate by plasma assisted molecular beam epitaxy (PAMBE) technique. The thickness of GaN buffer layer was varied to find out the optimum GaN buffer layer for a crack free heterostructure, exhibiting appreciable structural and optical results. Full width at half maximum (FWHM)...
The capability to build systems entirely based on European technologies is an essential condition for all the companies working in the Defense and Space industry, in order to overcome possible problems related with the restrictions on export licenses (ITAR). For this reason from the last 40 years Selex ES Foundry has been committed to provide state-of-the-art solid state components, establishing a...
A novel procedure for voltage standing wave ratio (VSWR) ruggedness testing of GaN-HEMTs is described. In the test the transistor is exposed to an increasing level of VSWR stress and an extensive set of marker parameters are monitored before, during, and after stress. A gate- and drain-lag pulse response test has been developed that reveals VSWR stress influence on slow surface charges. Recovery is...
In this paper, the design, implementation, and experimental results of a high power, high efficiency, and wideband two-stage GaN-HEMT power amplifier (PA) are presented. The design is performed using source-pull/load-pull simulations together with a systematic approach to design wideband input, output, and interstage matching networks. Large-signal measurements show that, 50–52 dBm output power, 24–26...
In this paper, the design, implementation, and experimental results of a high power, high efficiency, and wideband two-stage GaN-HEMT power amplifier (PA) are presented. The design is performed using source-pull/load-pull simulations together with a systematic approach to design wideband input, output, and interstage matching networks. Large-signal measurements show that, 50–52dBm output power, 24–26...
A novel procedure for voltage standing wave ratio (VSWR) ruggedness testing of GaN-HEMTs is described. In the test the transistor is exposed to an increasing level of VSWR stress and an extensive set of marker parameters are monitored before, during, and after stress. A gate- and drain-lag pulse response test has been developed that reveals VSWR stress influence on slow surface charges. Recovery is...
In this work, we developed (1) an offset-overhanging Y-shaped gate structure to reduce the electric field at gate-edge, and demonstrated (2) low current collapse of InGaN back barrier structure that improved off-state breakdown voltage. In addition, we adopted (3) an InAlN electron-supplying layer to enhance the drain current. The fabricated InAlN/GaN HEMTs with 80-nm gates showed a high off-state...
A high power internally matched GaN-HEMT amplifier at Ku-Band was successfully developed. In order to achieve high output power over the targeted bandwidth, a new balancing network is added to the gate side matching circuit. At 24 V drain supply voltage, the HPA delivers 80W of CW RF power with a PAE exceeding 22% over the 13.75–14.5 GHz frequency range. To the best of authors' knowledge, this output...
Enhancement-mode GaN-HEMT devices with a newly developed recessed-gate structure were fabricated. These devices were capable of operating at up to 30 MHz switching. A wireless power transmission (WPT) was adopted for a potential application of these GaN devices, because high-frequency (f) switching devices are expected to improve the power-transfer efficiency (η) of the WPT. A GaN-based E-class amplifier...
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