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Global failure analysis techniques are very critical in the failure site isolation, especially continuous scaling down IC device. Active photon probing is most dominant technique of the global failure analysis technique. In this paper, two real case of the 45 nm technology node was studied. Both of the unit failed in the FEOL. Thermally-induced Voltage Alteration (TIVA) and Light-induce Voltage Alteration...
In this paper the effect of Al-metal-thickness variations on the IC metal lifetime is investigated. Because the flow of currents in IC metals is mainly dictated by the front-end circuitry, metal thickness variations result in current-density changes in the IC metals. The change of current density, in turn, results in metal lifetime variations caused by Electromigration (EM). This effect is investigated...
Challenges of design window shrinkage in deeply scaled silicon technologies are addressed by improving design, characterization, and modeling of I/O and ESD devices, and by developing ESD robustness and circuit performance co-design methodologies. Advanced ESD metrology methods are reviewed and their applications in providing key information for reliability modeling are investigated. Package and wafer...
High power RF transmitters are essential components for enabling base stations, microwave, and broadcast systems. NXP is a leading RF Power supplier for more than 25 years, and our market share gain with volume. In principle, the market demands high power, high frequency and high efficiency with low thermal resistance: Efficiency larger than 30%, frequency in range of 0.7-2.5 GHz or higher, which...
Soft defect localization (SDL) is an established fault isolation process for localizing soft defects using laser heating. This paper consolidates interesting analysis cases to identify good relation between SDL set-points and defect types that enables better approach in exposing such defects during physical analysis and reduce cause-not-founds.
Below are the results of the measurements of UCN voltage of the constant component of signal- response of the test samples of solder joints of chip imitator of integral circuit (IC) and substrate made of polyimide film while applying periodic sequence of square pulse of electric current. The samples with high and abnormally high UCN voltage level were detected with their resistance still within the...
The dramatic increase in leakage current, coupled with the swell in process variability in nano-scaled CMOS technologies, has become a major issue for future IC design. Moreover, due to the spread of leakage power values, leakage variability cannot be neglected anymore. In this work an accurate analytic estimation and modeling methodology has been developed for logic gates leakage under statistical...
Transconductance (gm) enhancement in n-type and p-type nanowire field-effect-transistors (nwFETs) is demonstrated by introducing controlled tensile strain into channel regions by pattern dependant oxidation (PADOX). Values of gm are enhanced relative to control devices by a factor of 1.5 in p-nwFETs and 3.0 in n-nwFETs. Strain distributions calculated by a three-dimensional molecular dynamics simulation...
In deep submicron era, to prevent larger amount of SRAM from more frequently encountered overheating problems and react accordingly for each possible hotspots, multiple ideal run-time temperature sensors must be closely located and response rapidly to secure system reliability while maintaining core frequency. This paper presented a method to extract run-time temperature information from multiple...
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