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This paper presents a computational approach to accurately calculate the effects of the wafer-to-wafer oxide thickness (Tox) variations on the extracted TDDB parameters. Methodology relies on the available experimental data from the TDDB tests performed on wafers from the 0.35 ?? technology on the line of production. Wafer-level Tox variations are included too. Results show that the effects on gate-oxide...
In this paper the effect of Al-metal-thickness variations on the IC metal lifetime is investigated. Because the flow of currents in IC metals is mainly dictated by the front-end circuitry, metal thickness variations result in current-density changes in the IC metals. The change of current density, in turn, results in metal lifetime variations caused by Electromigration (EM). This effect is investigated...
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