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Bandwidth limitation of current wireless frequency bands and the energy consumption are challenges that have to be addressed by future 5G wireless networks. The millimeter wave (mm-wave) spectrum, spanning 30 GHz to 300 GHz, is a prime candidate to resolve the bandwidth limitation issue in future networks. High-speed electronics, though, are quite energy-inefficient for such mm-wave signal generation...
Microring weight banks enable reconfiguration in analog photonic networks and multi-channel RF front-ends. We demonstrate 2-ring weight banks and show that they are tolerant to fabrication and thermal effects. Weights consisting of two microrings can potentially increase channel capacity by a factor of 2.72-fold.
In the application of microwave photonic links, a solution is proposed to suppress the harmonic of the silicon microring modulator by optimizing the bias voltage applied on this modulator, and the influence of input rf power on this bias voltage is also analyzed. Simulation results show that this optimized bias voltage varies by the input rf power due to the nonlinearity in the silicon microring modulator,...
This paper presents RF-MEMS test vehicles: Single-Pole Single-Throw (SPST), Single-Pole Double-Throw (SPDT) switches and high-voltage generators integrated with SPST switches that are designed and fabricated in IHP's 0.25 μm SiGe BiCMOS technology for K-band (18–27 GHz) space applications. All the fabricated RF-MEMS test vehicles are packaged by a wafer-to-wafer packaging technique. The fabricated...
In this work, we provide early insight into the combined tradespace for both power switching and RF applications afforded by the high critical, electric-field strength of β-Ga2O3. MOSFETs formed by homoepitaxial growth of β-Ga2O3 films doped with Sn, Si, and Ge on bulk substrates have been characterized electrically. Several key milestones have been achieved such as enhancement-mode operation >...
We present the design of an integrated dual-polarisation superconductor-insulator-superconductor (SIS) mixer operating at ALMA Band 10 frequency range. All the RF components, including the orthomode transducer (OMT), the quadrature hybrid and the SIS mixer circuits, are designed as superconducting planar circuits to form a single planar mixer chip. The mixer circuits will be fabricated using standard...
This paper presents the design and preliminary results of a low power, compact and high-speed modulator in the O-band featuring apodized slow-light structures and a slow-wave RF design. The device is a candidate for future single mode optical interconnects in large-scale data centers.
A compact and high density integrated design with high isolation for S-band up-conversion system is presented in this paper. The system has two phase locked loop(PLL) frequency sources which provide local oscillator(LO) signals for frequency conversion. In order to realize a high isolation design, the circuits of two PLL and mixer were divided into three independent cavities through a ‘T’ shape crosser...
We propose an adaptive distributed-bias driving method for silicon travelling-wave Mach-Zehnder modulators and achieved ∼25% modulation efficiency enhancement at both 10 and 25 Gb/s with <3.5 Vpp, without optimizing horizontal PN-diodes. This method also suggests a new modulator scheme allowing efficiency improvement and design flexibilities.
Photonic-electronic integration is a key technology to master data traffic growth and therefore an enabler of future network technologies. For some time now, a novel silicon-based photonic-electronic integration technology, photonic BiCMOS, is under development at IHP. Photonic BiCMOS is a planar technology co-integrating monolithically on a single substrate high-speed RF frontend electronics - by...
Compared to frequency division duplex (FDD) and time division duplex (TDD), full duplex (FD) is effective in improving frequency efficiency and in achieving flexible resource assignment. The key challenge to actualizing FD in cellular systems is to suppress sufficiently self-interference (SI) from the own transmitter using antenna isolation, an analog self-interference canceller, and a digital self-interference...
As a transparent conducting oxide with a large bandgap of ∼4.9 eV and associated large estimated critical electric field (Ec) strength of 8 MV/cm, β-Ga2O3 (BGO) has been touted for its tremendous potential as a power switch. Power switch metrics such as Baliga's figure of merit (BFOM) estimating dc conduction losses and Huang's material figure of merit (HMFOM) incorporating dynamic switching losses...
A pair of completely integrated capless preamplifiers (not requiring external capacitance) for MEMS microphones are presented. The devices exploit specific circuit solutions to implement a proper dc biasing of the pre-amplifier and a low frequency (< 1 Hz) high-pass pole. The two solutions adopted are a based on a transistor in the off state (OTP) and a switched-resistor (SRP), respectively. Since...
We demonstrate comb generation on 220-nm silicon-on-insulator, enabled by a dual-drive Mach-Zehnder modulator, by which 7 comb lines with 7dB flatness and 5 lines with 3dB flatness have been achieved. This provides a promising solution for flexible multicarrier transmitters on silicon.
Saw-Less Frequency Division Duplexing and Full-Duplex transceivers require very high receiver linearity. Self-Interference Cancellation can relax the specification but results in very high power. We propose a low-power direct-conversion single-ended receiver with passive SIC. A 28 nm CMOS prototype achieves an effective IIP3 > 25 dBm for both IB and OOB SI with only 20 dB cancellation and 25 dB...
A code-domain N-path RX is proposed based on PN-code modulated LO pulses for concurrent reception of two code-modulated signals. Additionally, a combination of Walsh-Function and PN sequence is proposed to translate in-band TX self-interference (SI) to out-of-band at N-path RX output enabling frequency filtering for high SI rejection. A 0.3 GHz–1.4 GHz 65-nm CMOS implementation has 35 dB gain for...
This paper presents a fully integrated class-A mode Differential Power Amplifier (DPA) on a thin silicon substrate intended for being embedded into flexible electronic foil systems. A high-speed and cost-effective 95 GHz-fmax, 0.25 μm SiGe:C technology (IHP process SGB25V) is used. RF performance of DPA has been evaluated with the pre- and post-thinning measurement results at die level. The behavior...
To enable simultaneous full-duplex radios, self-interference (SI) cancellation (SIC) circuits that attain large cancellation bandwidths (BWs) are needed to support modern standards such as Long-Term Evolution (LTE). For mobile applications, SIC should be linear, tunable, fully monolithic (compact form factor) and must be implemented at the radio-frequency (RF) front-end. Emulating the group delay...
We present some recent progress towards the implementation of the basic building blocks of quantum information processing derived from a Si CMOS technology platform. In our approach, characterized by an emphasis on foundry compatibility in terms of processes and materials, the so-called qubits are encoded in the spin degree of freedom of gate-confined elementary charges. After introducing various...
In this paper, we present a scalable physics-based model that accurately predicts the steady-state high-frequency behavior of memristive RF switches. This model is, to the best of our knowledge, the first lumped RF memristor model that includes device parasitics obtained from physical measurements reported in the literature. Furthermore, we propose two topologies (series and shunt) for non-volatile...
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