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Data acquisition systems in High Energy Physics (HEP) experiments rely on tens of thousands of radiation hard optical links based on high data rate, low power transmitters which also have to be able to withstand high levels of different types of radiation. Radiation hardness is one of the requirements that becomes more demanding with every new generation of experiment. Previous studies have shown...
We report near-infrared and high-speed silicon photo-detectors capable of sub-bandgap light absorption based on the optically-assisted tunneling induced by a large electric field.
We demonstrate an all-silicon N-P-N phototransistor integrated on a silicon waveguide. The device has a high responsivity of 10 mA/W under 5 V bias at the 1550 nm telecommunication band, larger than the all-silicon P-I-N and P-N photodetectors.
Change in refractive index and corresponding change in optical properties like propagation loss, group index and dispersion in active PIN silicon waveguide with and without photonic crystal core are investigated by changing doping concentration. This investigation sets a bound on doping density which is utilized to change effective refractive index for various applications like modulation, switching,...
We report results of a parametric study performed on a capacitive silicon modulator. The trade-off between modulation efficiency, optical losses and modulator speed was analysed.
The photoluminescence from Ge waveguides was improved due to high n-type doping concentration and large tensile strain of Ge layers by combination of low temperature epitaxial growth and RTA process.
In this paper, we review our progress on carrier-depletion-based silicon modulator. The lateral and the interdigitated PN junctions are optimized and then compared systematically. The comparison helps us to choose a proper doping pattern for 40 Gbit/s modulation with MZ structure and travelling wave electrode. Ring modulators with both doping patterns are able to work at 10 Gbit/s with 0.5 Vpp driving...
We present the first CMOS compatible, electrically pumped Fabry-Perot Ge laser with larger than 1mW output power and a gain spectrum width of nearly 200nm in the range from 1520nm to 1700nm.
A comparison is preformed between carrier-depletion modulators with different doping patterns to reach low VπLπ = 0.62 V·cm at DC with interdigitated and lateral PN junctions respectively, but also show modulation at 35 Gbit/s (errorfree).
For RF-/microwave-applications, the loss of the current optical silicon modulator (typical ∼1 dB/mm) is still too high for commercial using compared with that of Lithium Niobate modulator. Approaches for reducing the loss often compromise with the degradation of the other two key performance parametric including modulation efficiency and switching speed. In this work, we achieved the reduction of...
Tensile strained Ge films with P concentrations as high as 3.4 × 1019 cm−3 are grown using UHVCVD. Photoluminescence measurements reveal significant direct band gap narrowing, enhanced photoemission, and optical bleaching.
Depletion mode silicon modulators with an extinction ratio of >10 dB at 12.5 Gbps and a phase-shifter optical loss of 4 dB is reported. A novel technique further reduces the optical loss, bridging the performance gap between silicon and LiNbO3 modulators.
We review recent progress in Ge active photonic devices for electronic-photonic integration on Si, demonstrating new tricks in optoelectronics from this “old” semiconductor material used for the first transistor more than 60 years ago.
Field-Assisted Solid-State Ion-Exchange (FASSIE) technique for doping silicate glasses with either transition metals or rare earths has been attracting much attention for its potential application in light waveguides, luminescent materials and for the possibility to realize systems in which formation of metal nanoclusters is controlled by suitable post-exchange techniques. In this framework, metallic...
This paper reports the effect of doping concentration to the electrical characteristic performance of the phase modulator in the carrier injection mode at wavelength 1.55μm. The phase modulator device has been integrated in the silicon-on-insulator (SOI) rib waveguide with the p-i-n diode structure. The electrical device performance is predicted using the 2-D semiconductor package SILVACO (CAD) software...
We present theoretical modeling and experimental results of optical gain and lasing from tensile-strained, n+ Ge-on-Si at room temperature. Compatible with silicon CMOS, these devices are ideal for large-scale electronic-photonic integration on Si.
Polycrystalline germanium (poly-Ge) grown on amorphous Si (a-Si) by ultra-high vacuum chemical vapor deposition (UHVCVD) over oxide barriers at low temperatures (Tles450degC) exhibits a larger grain size and lower defect density than the as-grown poly-Ge next to the oxide barriers. Poly-Ge as deposited at 450degC is p-type, but the introduction of PH3 during Ge deposition gives n-type poly-Ge with...
In this paper, gaseous precursors containing boron or phosphorous were intentionally introduced in the deposition of SiON layers and upper SiO2 claddings. The measurements show that the as-deposited B/P-doped SiON layers contain less hydrogen than undoped layers. Furthermore, the necessary annealing temperature for elimination of hydrogen related absorption (propagation loss) is greatly reduced in...
This paper demonstrates, via simulation, an electro-optic modulator based on a subwavelength Fabry-Perot resonator cavity with ultra-low power consumption. The device is modulated at a doped p-i-n junction overlapping the cavity in a silicon waveguide perforated with etched holes, with the doping area optimized for minimum power consumption. The surface area of the entire device is only 2.1 mum2....
We present the novel design of a silicon modulator with low operation voltage of les3 V by employing periodically interleaved pn junctions. Simulations predict that in depletion mode it has a high modulation efficiency of better than 1.5 Vldrcm.
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