Serwis Infona wykorzystuje pliki cookies (ciasteczka). Są to wartości tekstowe, zapamiętywane przez przeglądarkę na urządzeniu użytkownika. Nasz serwis ma dostęp do tych wartości oraz wykorzystuje je do zapamiętania danych dotyczących użytkownika, takich jak np. ustawienia (typu widok ekranu, wybór języka interfejsu), zapamiętanie zalogowania. Korzystanie z serwisu Infona oznacza zgodę na zapis informacji i ich wykorzystanie dla celów korzytania z serwisu. Więcej informacji można znaleźć w Polityce prywatności oraz Regulaminie serwisu. Zamknięcie tego okienka potwierdza zapoznanie się z informacją o plikach cookies, akceptację polityki prywatności i regulaminu oraz sposobu wykorzystywania plików cookies w serwisie. Możesz zmienić ustawienia obsługi cookies w swojej przeglądarce.
This paper reports a 3.0 THz detector which can detect the terahertz wave radiated by a quantum cascade laser (QCL) working at pulse mode. The detector was implemented in a 65 nm silicon CMOS process. The chip size is 1.5×l.5 mm2 including bonding pads. THz detector using FET is based on plasma wave theory proposed by Dyakonov and Shur which allows detection of THz radiations far beyond the FET devices...
We demonstrate that a field effect transistor (FET) operating as THz or far infrared sensor could be used as a sensitive spectrometer when exposed to a strong tunable local oscillator signal with the varying frequency and phase. The FET nonlinearity results in the detected signal being enhanced by the local oscillator power and proportional to the cosine of the phase difference between the local oscillator...
Given a video clip, action proposal aims to quickly generate a number of spatio-temporal tubes that enclose candidate human activities. Recently, the regression-based networks and long-term recurrent convolutional network (L-RCN) have demonstrated superior performance in object detection and action recognition. However, the regression-based detectors perform inference without considering the temporal...
Terahertz (THz) plasmonic field effect transistor sensors have emerged as prime contenders for applications in THz and sub-THz communications, biomedical sensing, and imaging. Noise is one of the most important factors determining their performance. We show that the conventional approach of using thermal noise of the device impedance for predicting the sensor performance is inadequate because it ignores...
Performance of a detector based on AlGaAs/InGaAs/GaAs-material system was studied. The detector was comprised of large serpentine array of high-electron mobility transistors (HEMTs) connected in series. The floating drain contact of each transistor (except the last one) served as a source for the next one. Detection of terahertz (THz) radiation was based on the excitation of electron plasma oscillations...
A solid state 3D scanner based on a pulsed laser diode source and narrow time gating of a 2D CMOS single photon avalanche diode (SPAD) detector array is presented. The imager uses an on-chip delay-locked loop to program the time gating of 40 sub-arrays individually. The prototype detector has 80 × 25 pixels with a fill factor of 32 % in the sensor area. The chip has been fabricated in a 0.35 μm high-voltage...
This paper describes a novel readout integrated circuit (ROIC) for a photoresistive image sensor array incorporating wheatstone bridge configuration with a variable-gain switched-capacitor amplifier. A 12-bit R-2R ladder digital-to-analog converter (DAC) is used for on-chip calibration. The bias voltage of the bridge is supplied by an on-chip DAC and made programmable between 0 to 1.8 Volts for ROIC...
This paper presents a 2 GS/s 5-b single-channel SAR ADC in 28 nm CMOS. The ADC uses a gm-boosted StrongARM comparator to achieve the highest reported sampling frequency for a non-time-interleaved SAR ADC. Its high sampling frequency, large input signal capability and one clock cycle latency make the ADC suitable for time-interleaved, multi-stage and feedback ADC architectures. The ADC occupies 900...
In this paper, we explain the THz detection mechanism in sub-threshold Si MOSFETs by exploiting the exponential dependence of channel electron density to the gate-source voltage. According to our theory, this high frequency non-linear dependence is the underlying mechanism for rectification of THz radiation. The maximum detection frequency is limited by dielectric relaxation time of the electrons...
We compare Terahertz detection by large-area to antenna coupled lumped element field-effect transistors (FETs). The large radiation resistance of Ra=72 Ω of the antenna coupled device improves the responsivity by a factor of 150 as compared to the antenna-less large area device. The LA-FET is an order of magnitude more sensitive than expected from theory.
Gated graphene has been used to realize a microwave power detector. A Corbino disc structure with Ti/Ag contacts has been fabricated on top of graphene deposited on P-type Si substrates with SiO2 gate oxides. This device exhibits power detection with a sensitivity reaching 0.87 mV/mW at a frequency of 433.92 MHz using lock-in detection at room temperature.
We report a highly-sensitive plasmonic nano-ring transistor for monolithic terahertz (THz) active antenna. By designing an ultimate asymmetric transistor on a metal-gate structure, more enhanced (180 times) channel charge asymmetry has been obtained in comparison with a bar-type asymmetric transistor of our previous work. In addition, by exploiting ring-type transistor itself as a monolithic circular...
A digital control loop scheme for a high speed PLL is suggested to detect amplitude errors at the output of the oscillator. Reliability specifications of the PLL are likely to be violated in case of excessive output swing in the oscillators. In addition, low amplitude swings will have negative influences on the phase noise of LC oscillators. As a result, the performance and reliability of the PLL...
The state of art secure digital computing systems heavily rely on secure hardware as the Trusted Computing Base to build upon the chain of trust for trusted computing. Attack Protection Blocks are added to the hardware to prevent an adversary from bypassing the security provided by hardware using various side channel, voltage, frequency, temperature, and other attacks. However, attackers can target...
In this study, a controller for switched-resonator converters operating in the 10MHz range is presented with self-tuning capabilities. The control scheme provides a fast and accurate two-stage lock-in procedure to ensure zero-current switching at high frequencies, maintaining low control workload. The various modules of the controller are detailed, including the self-tuner based on a digital delay-locked...
IoT network requires global reachability, mobility support, richer communication patterns and resource efficiency. To address these needs, MF-IoT has been proposed as an extension of MobilityFirst which allows applications even in the low-end IoT devices to use the aforementioned network capabilities.This demo uses surveillance camera as an example to show the feasibility and efficiency of MF-IoT...
Impact ionization [1,2], or electron-hole pair creation by charged particles, has been one of the central issues of semiconductor physics and devices. However, due to its complexity of the process, most experimental studies and their analyses have been macroscopic and phenomenological. This situation prevents us from exploring the fundamental physics of impact ionization and of high-energy charged...
Single photon detectors allow us to work with the weakest signals such as auto-fluorescent biological sources. In combination with time gated operation mode, an array of detectors can be used as Fluorescence Lifetime Imaging system with extremely high sensitivity.
We report the first demonstration of real-time monitoring of a single spin in a Quantum Dot (QD) using foundry-compatible Si MOS technology and a Split-Gate design with built-in charge detector. Since single-shot readout is an indispensable step in the pursuit of Si-based fault-tolerant quantum computing, this work contributes to asserting the fabrication of Si spin qubits in a MOS technology platform...
The reduction of electromagnetic emissions (EME) in switch mode power supplies (SMPS) has high importance especially in automotive applications. The main methods to influence the switching behaviour of SMPS are external filters, spread spectrum techniques and the output driver circuits. This paper presents the concept and its implementation of an output driver with adaptive current source control...
Podaj zakres dat dla filtrowania wyświetlonych wyników. Możesz podać datę początkową, końcową lub obie daty. Daty możesz wpisać ręcznie lub wybrać za pomocą kalendarza.