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The electrical and photosensing properties correlated with structure and morphology of TiO2/(GeSi/TiO2)2 multilayers are investigated. The multilayers are prepared by magnetron sputtering followed by rapid thermal annealing. Studies of Raman spectroscopy, transmission electron microscopy and X-ray diffraction are carried out. Measurements of dark current versus voltage and temperature are done. The...
With their intrinsic superiorities such as high breakdown electric field and high thermal conductivity, SiC MOSFETs are replacing Si IGBTs in power electronics applications. However, at higher voltages SiC MOSFETs are at early stage of development and are not commercialized yet. For the first time, this paper presents thorough static and dynamic performance characterization of 3.3 kV and 30 A discrete...
Silicon Carbide (SiC) power devices with super-cascode structure provide a cost-effective solution for high performance medium voltage power switches. However, these SiC super-cascode devices are still in the early development stage, and limited information on the device characteristics is available. This paper presents the characterization and evaluation of a 4.5 kV, 40 A SiC super-cascode device...
Following the recent advances in the production of 3.3 kV and 10 kV SiC power MOSFETs, Wolfspeed launched an effort to develop a new generation 6.5 kV SiC power MOSFET to fill the medium-to high-voltage fast switching device void in applications such as rail traction and mediumvoltage motor drives. The characteristics of the new generation 6.5 kV SiC power MOSFET rated at a drain current of 30 A,...
III-V semiconductor heterostructures grown on GaSb and InAs substrates are widely used to produce high performance optoelectronic devices operating in the technologically important mid-infrared spectral range. However, these substrates are expensive, only available in small sizes and have low thermal conductivity. Integration of III-Vs onto silicon substrates offers the opportunity to overcome these...
This paper presents the project procedure to develop a Half-Bridge (HB) Non-Isolated DC-DC converter applying a Normally-On GaN-based switch. Normally-on devices (D-mode) present the benefit of lower costs in terms of production if compared with E-mode devices, which gives an economic motivation to study and develop power electronics converters applying this technology. The devices under test (DUTs)...
The design, fabrication and testing of a novel resonant accelerometer integrated with a temperature sensor is presented in this paper. The accelerometer consists of double quartz resonators and a silicon substrate. A novel diamond like carbon (DLC) film with special electrical property, excellent mechanical property and chemical stability, which has negative temperature coefficient of resistance (TCR),...
We designed, simulated and experimentally characterized thin silver microheater structures placed on a dielectric multilayer membrane, which represent the concept of vertical-cavity enhanced resonant thermal emission (VERTE). This concept has the goal to achieve selective and coherent thermal emission on the backside of the multilayer membrane. The dielectric stack also is responsible for the thermal...
Scanning Thermal Microscopy (SThM) is a key technique for thermophysical property measurements with a submicrometric spatial resolution. The European project QUANTIHEAT “Quantitative scanning probe microscopy techniques for heat transfer management in nanomaterials and nanodevices” is centred around this technique. Project aims at solving the problems of thermal metrology at the nanoscale by delivering...
In this paper, a compact model for the gate current in HKMG nMOS transistors is presented. The carrier transport through the multi-stack gate dielectrics of HKMG MOS transistors is shown to be dominated by the Trap Assisted Tunneling and Poole-Frenkel conduction mechanisms. Both these mechanisms occur simultaneously and each is dominant in a particular gate voltage range. The interdependence and simultaneity...
Amorphous thin films are used as components of acoustic resonators because they could control temperature coefficient of resonator. Because elastic constants of thin films are often different from those of bulk materials, the direct measurement of sound velocity and temperature coefficient of velocity (TCV) for individual thin films becomes important in designing resonators. Because The TCV of amorphous...
In this paper an ultrasonic reflectometry approach to measure the thermal conductivity and temperature of a material by contact is presented. This device can be utilized for monitoring material properties during manufacturing, and robotic handling of objects. The sensor comprises an AlN piezoelectric ultrasonic transducer operating at GHz frequencies, situated on one side of a silicon chip. The transducer...
The thermal diffusivity of silicon DSi has been used to realize fully-CMOS frequency references. However, due to the temperature dependence of Dg, the accuracy of such frequency references is limited to about 1000 ppm (−55 °C to 125 °C, one-point trim) due to the inaccuracy of the on-chip temperature compensation circuitry. As an alternative, we propose a frequency reference based on the thermal diffusivity...
In many cases it is important to measure the temperature and the thermal conductivity of an object by contact. Examples include sensors in robot hands, and sensors to measure material properties during manufacturing. In this paper, we demonstrate the ability to measure the time-of-flight (TOF) as a function of time after mechanical contact to the transducer, and show that the rate of TOF change can...
Diamond-like carbon films (DLC) were deposited on both the Si(100) and stainless steel substrate by means of Microwave Plasma enhanced chemical vapor deposition (PECVD) under the open-air. From the XPS measurements, the sp2/(sp2+sp3) ratio of the DLC film is similar to that of the film grown by the conventional PECVD. In the pulse-modulated microwave PECVD growth at the duty ratio 30%, the impurity...
This work deals with an overall concept of a 3D-stack enabling to produce a directly pluggable high voltage power LED. Using a dedicated silicon vehicle test, a thermal study is carried out with an extensive thermal modelling, optimization, assembly process and Infrared thermal characterization. It is shown that the main thermal issues are due to the presence of the flip chip interconnection layer...
Thermal simulations are a powerful tool for the development and design of new electronics to predict their thermal behaviour during operation. To obtain accurate thermal simulations the knowledge of thermal properties of all the materials integrated in electronic devices is essential. Most materials show a decrease of thermal conductivity and thermal diffusivity with increasing temperatures, which...
BaTi5O11 thin films with single-layer thicknesses about 400 nm were deposited on the Si substrates by sol-gel method. The influence of surface morphology, optical and dielectric properties was mainly investigated. The diffraction pattern showed that the annealed films exhibited a polycrystalline microstructure, and the increase in grain size of BaTi5O11 thin films occurred with an increase in annealing...
Pb-free silver pastes based on SnO-B2O3 glass frits were synthesized and used for the front-contact electrodes of crystalline silicon (c-Si) solar cells. First, four kinds of SnO-B2O3 glass frits with different amounts of SnO were synthesized by a melt-quenching method, and four Ag pastes based on these glass frits were prepared correspondingly. Then, Ag pastes were printed on c-Si solar cells and...
The operating frequency of InP high electron mobility transistor (HEMT) based amplifiers has moved well in the submillimeter-wave frequencies over the last couple of years. Working amplifiers with substantial gain in waveguide packages has been reported beyond 700 GHz. When cooled cryogenically, they have shown significant improvement in their noise temperature. This has opened up the real possibility...
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