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GaAs-based Blocked-Impurity-Band (BIB) detector, as a potential high-sensitive, low noise Terahertz (THz) detector, has been developed for the broad application in the area of THz security check and astronomy mission. In this work, GaAs:Si and GaAs:Te BIB detectors were fabricated. Their responsivity properties were measured at T=3.5K, under different biases and the same black body temperature of...
We have developed a GaAs-based Blocked-Impurity-Band (BIB) Detector for the application of Terahertz (THz) security check and astronomical observation. In this work, we have fabricated GaAs:Si and GaAs:Te BIB detectors and analyzed their spectral response characteristics at 3.5K The experimental results of GaAs:Si BIB device demonstrate that the spectral response increases when the bias rises from...
In this paper, a new LDMOS on silicon-on-insulator (SOI) with homo-type fixed interface charges in the bottom of field oxide layer is proposed. The surface electric field can be improved by adding the fixed interface charges and optimizing the doping profile, which can effectively modulate electric field to obtain the optimization trade-off between the breakdown voltage and on-resistance. The numerical...
Increasing the base doping concentration, utilizing gold as the recombination center, employing high quality oxide layer and applying the hardening design for physical structure could effectively reduce the change rate of current gain after irradiation. This conclusion is found out by analyzing the variation of the current gain of bipolar junction transistors with components in different craft.
In this paper, we simulate and investigate a novel Tunnel Field-Effect Transistor (TFET) using the charge plasma concept on the source side. Herein, an inverted p-type source is created to form a p+-n tunneling diode structure on a uniformly n-type doped thin silicon film, hence named, Inverted-TFET (I-TFET). Using calibrated simulations, we verify that the Ion is boosted (□ 20 times) in the proposed...
A novel TFET known as Double Source Tunnel FET (DS-TFET) is proposed in this paper, which provides higher ON current (ID-ON) with smaller turn-on voltage as compared to present Si based Tunnel FETs. The tunneling area is considerably enhanced which in turn increased the on-current ID-ON (∼29.2 μA/μm) for a smaller turn-on voltage (Vtu = 0.15 volt). The results of rigorous 2D simulation are presented...
This paper presents an optimized doping strategy for vertical-channel three-dimensional (3D) NAND flash. This NAND flash is junction-free without dopant inside the string. Source side near SSL and drain side near GSL are both n-doped junction, providing electron in +FN programming. P-doped substrate provides hole in −FN erasing [1]. Carrier source in both program and erase does not depend on GIDL...
The present work deals with the study and investigation on the GAA Tunnel FET electrical parameters under varying physical conditions, especially, channel thickness tsi and length, as well as oxide thickness tox. Moreover, the effect of the channel doping concentration and the gate work function Φm. This is achieved using the finite element, numerical method by solving Poisson's equation in the cylindrical...
The short length and graded gap of InGaAs-based diodes with impact ionization are considered. Diode peculiarity is defined by usage region with varying composition. The analysis of diodes operation is performed by Monte Carlo technique. Influence of doping and composition profile on current-voltage characteristic of diode is investigated. The possibility of same direct motion of both types of charge...
In this paper, we study the source drain Gaussian doping profile of strained In0.53Ga0.47AS based high electron mobility FinFET transistor (HEMT). The Gaussian doping profile is created using Pearson distribution model by setting the values of the gamma and beta parameters (the function characterizing the amorphous part of the profile). The ON current increases exponentially and the step doping also...
In this paper, a new PNPN tunnel field-effect transistor with L-shaped gate (LG-PNPN TFET) is proposed and investigated by numerical device simulator bringing significant on-state current enhancement. Higher drive current is achieved at VDD = 1.0V than traditional PNPN TFET because of both the line and point tunneling between the source and N+ pocket. Key parameters like the pocket width and doping...
This paper presents a simulation study to achieve wide-linear-range transconductance of T-gate GaN HEMTs by introducing a δ-doped layer and a p-GaN back barrier. With optimized δ-doping density and location, the transconductance (gm) and current gain cutoff frequencies (fT) are ultra-flat and remain close to their peak values over a wide range of gate-source voltages (Vgs). In addition, a smaller...
A relative humidity sensor based on Multi Walled Carbon Nanotubes (MWCNTs) doped with polymer Poly(methyl methacryate) was proposed in this paper. The fabrication technique applied in this paper is a simple direct drawing method that was able to produce a uniform waist microfiber with a minimum diameter of 5 μm with a length of 5 mm. This microfiber was tested on a different range of relative humidity...
There is a demand to further improve upon performance parameter of particle detectors for high luminosity applications. Higher breakdown voltage, larger signal, lower leakage current and low noise is the primary requirement for future detectors. We want systematic study and investigate one of the important parameters namely the breakdown voltage and want to achieve optimum result for future detectors...
In this study, the impact of Metal-Interlayer-Semiconductor Source/Drain (MIS S/D) structure on enhancement mode 7nm n-type germanium (Ge) junctionless FET (JLFET) is demonstrated with Sentaurus 3-D technology computer-aided design (TCAD). The device using MS S/D structure cannot operate for normally-off mode because of severe Fermi-level pinning (FLP) and using MIS S/D structure can be a solution...
This paper analyzes the formation energy and electronic structure of Li-N co-doped diamond by the method of the first-principles density-functional theory (DFT). We found that the Li-N co-doped diamond shows the shallow donor level mainly contributed by the N-2s states and N-2p states for the first time. Meanwhile, the doping efficiency of Li in diamond can be improved by the introduction of N atom...
A novel SOI trench LDMOS with vertical double-RESURF is studied in this paper. A p-type silicon pillar is inserted beside the oxide trench as a vertical double RESURF layer, which can effectively modulate the electronic field and enhance the doping concentration in the drift region. The drain n+ region extends to the surface of buried oxide layer, shortening the motion-path in the high-resistance...
In this paper, low cost 1200V UHV LDMOS device has been proposed. As BVD and Ron are contradictory, so to make low Ron, high breakdown voltage is the challenge of this paper. The key feature of this device is the linear P-top which is used to obtain best charge balance, and increase the diffusion current to move faster in the drift region which reduces the electric field and substantially helps to...
ZnO nanowires offer nanometer resolution with high piezoelectric coefficient as force sensors. There is, however, much room to improve the sensitivity with addition of substitutional impurities. Here, the effect of p-type Li doping on vertically-aligned crystalline piezoelectric ZnO nanowires (NWs) is investigated. The NWs are used as an elementary material to fabricate micro-Newton force sensors...
In this work, the electrical isolation of nanowires fabricated on bulk wafers is investigated. It is shown that electrical isolation can be realized with a Ground Plane isolation implant at the beginning of the process flow. For transistors using extensions, it is seen that a relatively high dose of Ground Plane doping is needed in order to avoid punchthrough through a parasitic channel less controlled...
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