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The short length and graded gap of InGaAs-based diodes with impact ionization are considered. Diode peculiarity is defined by usage region with varying composition. The analysis of diodes operation is performed by Monte Carlo technique. Influence of doping and composition profile on current-voltage characteristic of diode is investigated. The possibility of same direct motion of both types of charge...
The short length diode with forming cathode static domain and occurring impact ionization are considered. The diode peculiarity is the usage of heterojunction on cathode contact and region with varying composition. The analysis of the diodes operation was performed using Monte Carlo technique. The influence of doping profile on diode current - voltage characteristic is investigated. The carriers concentration...
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