In this paper, we study the source drain Gaussian doping profile of strained In0.53Ga0.47AS based high electron mobility FinFET transistor (HEMT). The Gaussian doping profile is created using Pearson distribution model by setting the values of the gamma and beta parameters (the function characterizing the amorphous part of the profile). The ON current increases exponentially and the step doping also reduces the ON resistance, hence mobility increases. The proposed doping profile gives 2000 mA current for 30 nm gate length HFET.