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In many communications applications semiconductor devices operate in a pulsed mode, where rapid temperature transients are continuously experienced within the die. We proposed a novel junction-level cooling technology where a metallic phase change material (PCM) was embedded in close proximity to the active transistor channels without interfering with the device's electrical response. Here we present...
To improve the bSPIFET, the SA-bSPIFET which used self-aligned process had been proposed. However there are many characteristics of bSPIFET not yet be studied. This paper focuses on the misalignment of gate shift (GS) in a 30 nm bSPIFET. Based on 2D simulation, the misalignment of GS will influence the electrical characteristics causing the degradation of the short channel behaviour and the stability...
Transconductance (gm) enhancement in n-type and p-type nanowire field-effect-transistors (nwFETs) is demonstrated by introducing controlled tensile strain into channel regions by pattern dependant oxidation (PADOX). Values of gm are enhanced relative to control devices by a factor of 1.5 in p-nwFETs and 3.0 in n-nwFETs. Strain distributions calculated by a three-dimensional molecular dynamics simulation...
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