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Increasing the base doping concentration, utilizing gold as the recombination center, employing high quality oxide layer and applying the hardening design for physical structure could effectively reduce the change rate of current gain after irradiation. This conclusion is found out by analyzing the variation of the current gain of bipolar junction transistors with components in different craft.
Conventional text-based information communications may cause misunderstanding particularly in case of a dialog between different generations, gender or cultural background. Intelligent communications may solve these problems by the aid of “happiness sensor” and retrieving additional information of personal record of the counterparts. Breakthroughs necessary to realize the intelligent communications...
We present a new bonding process for gallium nitride (AlGaN/GaN) devices from Si onto diamond substrates. In our technology AlGaN/GaN-devices are transferred from silicon (Si) onto single (SCD) and polycrystalline diamond (PCD) substrates by van der Waals bonding. Load-pull measurements on Si and sCd at 3 GHz and 50 V drain bias show comparable power-added-efficiency (PAE) and output power (Pout)...
GaN emitters have historically been of hexagonal phase due to natural crystallization. Here we introduce a cubic phase GaN emitter technology that is polarization-free via cointegration on cheap and scalable CMOS-compatible Si(100) substrate.
In this paper, low cost 1200V UHV LDMOS device has been proposed. As BVD and Ron are contradictory, so to make low Ron, high breakdown voltage is the challenge of this paper. The key feature of this device is the linear P-top which is used to obtain best charge balance, and increase the diffusion current to move faster in the drift region which reduces the electric field and substantially helps to...
Monolithic CMOS photonics seeks to minimize total transceiver cost by simplifying packaging, design and test. Here, I examine 25 Gb/s applications in commercially available process technology with a focus on receiver sub-system optimization.
In this work, the electrical isolation of nanowires fabricated on bulk wafers is investigated. It is shown that electrical isolation can be realized with a Ground Plane isolation implant at the beginning of the process flow. For transistors using extensions, it is seen that a relatively high dose of Ground Plane doping is needed in order to avoid punchthrough through a parasitic channel less controlled...
This work presents a novel Si-on-SiC laterally-diffused (LD) MOSFET structure intended to provide high breakdown voltage of 600 V and be resistant for harsh-environment space applications. Single-event effects (SEE) and total ionizing dose (TID) are investigated for the first time in such device. Initially, the considered Si LDMOS structure on SiC suffers from single-event burnout (SEB) at a drain...
For the first time, WS2-based transistors have been successfully integrated in a 300 mm pilot line using production tools. The 2D material was deposited using either area selective chemical vapor deposition (CVD) or atomic layer deposition (ALD). No material transfer was required. The major integration challenges are the limited adhesion and the fragility of the few-monolayer 2D material. These issues...
Wide bandgap semiconductors are promising regarding loss reduction and increase of switching frequency. In the specific case of two level power converter it has not been up to now clearly shown the potential of SiC and GaN in comparison with Si semiconductors. In this paper, a multi-variable analysis for different devices is carried out, considering system efficiency, heatsink size and output filter...
Graphene, one-atom-thick carbon film, has excellent and unique electrical properties, along with good flexibility. It is therefore expected to be applied to various electronic devices, such as transistors, interconnects, transparent electrodes, sensors, and new-principle devices. In this paper, we briefly review some of the applications. We also describe applications we have been working on, which...
This paper describes general considerations for the design of highly efficient and distributed room-temperature Terahertz detectors and transmitters in (Bi)CMOS technologies. It discusses the design of industrial-grade scalable terahertz imaging systems. This necessitates a deep understanding of the process technologies front-end and the back-end, as well employing innovative architectures of terahertz...
Non-volatile 3D FPGA research to date utilizes layer-by-layer stacking of 2D CMOS / RRAM circuits. On the other hand, vertically-composed 3D FPGA that integrates CMOS and RRAM circuits has eluded us, owing to the difficult requirement of highly customized regional doping and material insertion in 3D to build and route complementary p- and n-type transistors as well as resistive switches. In the layer-by-layer...
Vacuum micro/nano electronic devices possess merits of radiation hardness, temperature tolerance, high working frequency and output power. It's regarded as the promising candidates for the application on ultra-high speed transistor [1, 2], portable and fast-switch X-ray source [3], free electron laser [4], field emission display [5] and so on. In the developing of modern vacuum electronic, to achieve...
Demand of short failure analysis has been increasing in semiconductor failure analysis. It is known from the previous studies that many short failure analysis methods are suggested. However, it is extremely difficult to identify the short failure location in recent advanced devices due to the fact of optical resolution limit. On the other hand EBAC has been noted as the high resolution method to identify...
Single-electron tunneling (SET) transistors have been studied for the past several decades because they are promising for low-power consumption and fundamental-level control of charge. The quantum dots (QDs) that are the main part of an SET transistor have been demonstrated in a variety of materials, but recently dopant-atoms in silicon have also been shown to work as QDs. However, a single conventional...
Identifying the technology trends, key patents to be aware of, the key players active in the field, the product areas that are heavily patented or scarcely addressed, and the focus of a company's competitors represent crucial aspects of developing a successful strategic plan, determining a company's freedom to make and sell their product, and focusing future research & product development efforts...
We report a highly-sensitive plasmonic nano-ring transistor for monolithic terahertz (THz) active antenna. By designing an ultimate asymmetric transistor on a metal-gate structure, more enhanced (180 times) channel charge asymmetry has been obtained in comparison with a bar-type asymmetric transistor of our previous work. In addition, by exploiting ring-type transistor itself as a monolithic circular...
As beta-phase gallium oxide is gaining attention for potential application in electronic and optoelectronic devices, this paper addresses techniques for nanowire fabrication that offer the potential for low cost simplicity with the uniformity and reproducibility that are necessary for useful device implementation of these nanowires.
The area of flexible electronics is rapidly expanding and evolving. With applications requiring high speed and performance, ultra-thin silicon-based electronics has shown its prominence. However, the change in device response upon bending is a major concern. In absence of suitable analytical and design tool friendly model, the behavior under bent condition is hard to predict. This poses challenges...
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