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Despite the high phase non-linearity of a Silicon Mach-Zehnder Modulator in forward bias, we demonstrate that high third order spur-free dynamic range ~102.8 dB. Hz2/3 can be obtained by optimizing the D.C. bias operating point at 1 GHz.
This paper presents a hybrid multilevel inverter with DC bypass. Mixed modulation method is proposed to balance dc voltage, and enables Si devices & wide bandgap devices integration to reduce power loss and achieve high power density. Simulation results are firstly provided to verify the validity of the proposed approach.
The modular multilevel converter (MMC) is attractive for medium-or high-power applications because of the advantages of its high modularity, availability, and high power quality. Reliability is one of the most important challenges for the MMC consisting of a large number of submodules (SMs). The capacitor monitoring in each SM of the MMC is an important issue, which would affect the performance of...
In this paper we analyze the impact of temporal feature aggregation and feature dimensionality reduction on the performance of speaker identification tasks. We investigate these two processing steps in the context of communication layer constraints, such as limited bitrate, and privacy constraints at node level, of a wireless acoustic sensor network. To this end, we extract Modulation-MFCC features...
Low-threshold current and high-speed direct modulation features of membrane-based distributed-feedback (DFB) and distributed-reflector (DR) lasers will be presented. A power conversion efficiency of 12.5% was achieved with the DR laser by adopting a special design to reduce both the waveguide loss and the series resistance.
Mach-Zehnder modulators introduce nonlinearities for large driving signals that induce bit error rate (BER) penalties. In silicon photonics a nonlinear phase response leads to a more complex nonlinear response. We propose a digital pre-distorter based on a nonlinear memory polynomial model to reduce BER penalty.
We present the Ge-on-insulator platform for photonic integrated circuits. We have successfully demonstrated Ge photodetector integrated with a-Si waveguide. Ge passive waveguides and carrier-injection modulator operating at 2 μm wavelength are also demonstrated.
In this work, we demonstrate a way to modulate threshold voltage of InGaAs Fin-structured High-electron-mobility transistors (Fin-HEMTs) by narrowing fin width of the devices. Normally-off InGaAs FinHEMT has been successfully achieved when fin width of devices is smaller than around 180 nm. Also, we introduce a theory to explain side wall gates control of FinHEMTs to modulate threshold voltage.
In the application of microwave photonic links, a solution is proposed to suppress the harmonic of the silicon microring modulator by optimizing the bias voltage applied on this modulator, and the influence of input rf power on this bias voltage is also analyzed. Simulation results show that this optimized bias voltage varies by the input rf power due to the nonlinearity in the silicon microring modulator,...
We have experimentally demonstrated that the linearity of a silicon Mach-Zehnder modulator (MZM) could be improved by optimizing its phase-shifter length (PSL). Through the optimization of the PSL, the third order intermodulation distortion of the silicon MZM could be 16.7 dB lower than that of a commercial LiNbO3 MZM. The spurious free dynamic range of the link with the silicon MZM could be 4.1 dB...
We present the Ge Zener-Emitter injection mechanism for synthesis of an indirect semiconductor optical amplifier (ISOA), featuring gain characteristics and electro-absorption modulation with extinction ratios > 14 dB by sufficient Moss-Burstein shift, for generic Ge-on-Si Photonics platform.
In this paper, we explain the THz detection mechanism in sub-threshold Si MOSFETs by exploiting the exponential dependence of channel electron density to the gate-source voltage. According to our theory, this high frequency non-linear dependence is the underlying mechanism for rectification of THz radiation. The maximum detection frequency is limited by dielectric relaxation time of the electrons...
We show that graphene can be provide electro-optic properties to traditionally passive optical materials and enable efficient integrated active nanophotonic devices. We show devices with GHz absorption modulation based on ring resonators. We also report the first experimental demonstration of a graphene electro-refractive modulator with VπL of 0.14 V cm, and minimal absorption modulation based on...
A hybrid III-V/SOI directly modulated DFB laser operating at 1.5 μο is fabricated, showing a side mode suppression ratio above 50 dB and a 3-dB bandwidth of 12 GHz. Error-free transmission (BER<10−9) at 10 Gb/s over 66-km SSMF is demonstrated without dispersion compensation and FEC.
We propose an adaptive distributed-bias driving method for silicon travelling-wave Mach-Zehnder modulators and achieved ∼25% modulation efficiency enhancement at both 10 and 25 Gb/s with <3.5 Vpp, without optimizing horizontal PN-diodes. This method also suggests a new modulator scheme allowing efficiency improvement and design flexibilities.
A method is proposed for locking the resonance of a high-bandwidth, silicon micro-ring modulator using intrinsic-defect-mediated-photon-absorption. The photo-signal is generated by the modulator, and thus the need for a waveguide tap is negated. A digital PID loop is used for stabilization.
We propose a high-speed electro-absorption modulator based on a direct bandgap Ge0.875Sn0.125 alloy operating at mid-infrared wavelengths. Enhancement of the Franz-Keldysh-effect by confinement of the applied electric field to GeSn in a reverse-biased junction results in 3.2dB insertion losses, a 35GHz bandwidth and a 6dB extinction ratio for a 2Vpp drive signal.
This conference talk will sum up our recent contributions related to the integration of semiconductor carbon nanotubes (s-SWNTs) as an active material in silicon photonics. This work is motivated by the possible use of s-SWNTs for light emission, detection, and modulation relying on the same hybrid on-silicon integration platform. We will first describe experimental results carried out to prepare...
5G systems aim to achieve extremely high data rates, low end-to-end latency and ultra-low power consumption. Recently, there has been considerable interest in the design of 5G physical layer waveforms. One important candidate is Generalised Frequency Division Multiplexing (GFDM). In order to evaluate its performance and features, system- level studies should be undertaken in a range of scenarios....
Active modulation of light with large optical bandwidths (∼100 nm [1]) is required in photonic devices, such as modulators for fiber communications [1] and saturable absorbers for ultrafast pulse generation [2,3]. Present modulators use expensive materials, (e.g. LiNbO3 [4], III-V semiconductors [5], and Ge on silicon-on-insulator (SOI) [6]), and are limited by narrowband operation (∼20 nm for quantum-confined...
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