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The reliability characterization is a milestone for the design of semiconductor power devices operating in those applications where a high robustness is a critical point, as in the case of the automotive field. In order to realize a reliability model that can describe the degradation of power devices, due to a cyclic thermo-mechanical stress, the Coffin-Manson equation is widely applied. Generally...
Data sheets of commercial power semiconductor devices and modules available at this time on the market indicate a maximum permissible junction temperature specified in a range of 125 -200degC. Operation above the specified value is not possible without risk of device failure, although this is desirable in emerging power electronics applications. Typical device blocking electrical characteristics at...
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