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We have investigated carrier transport properties of μm-order-thick polycrystalline silicon (poly-Si) films formed by flash lamp annealing (FLA) of precursor amorphous Si (a-Si) films on glass substrates. The Hall mobility of flash-lamp-crystallized (FLC) poly-Si films decreases as doping concentration increases, and then reversely increase with further increase in doping concentration, both in the...
In this paper, we have investigated bulk trap and interface trap density (Dit) caused by millisecond annealing (MSA) using gate current fluctuation (GCF) and charge pumping measurements. We show that the high energy flash lamp annealing (FLA) creates the GCF with a long duration time and it is critical issue to get a stable SRAM operation. FLA creates interface traps localized at the gate edge of...
Millisecond annealing (MSA), such as flash lamp annealing (FLA) and laser spike annealing, is used for dopant activation of ultra-shallow junctions (USJ) in scaled complimentary metal-oxide-semiconductor (CMOS) devices. This is because lower sheet resistance (Rs) and less dopant diffusion are achieved with MSA and these are crucial requirements for minimizing the junction depth (Xj) in state-of-the-art...
Idea of a very short time annealing technology has evaluated in 1980s. Engineers tried to use Flash lamp, laser or some other lamps. In 1990s, W-halogen lamp annealing replaced furnace annealing in activation and silicidation process. Thermal budget has reduced from minutes to seconds. Eager for Milli-second Annealing (MSA) really came out in 2000s. Since dopant diffusion and an activation ratio have...
We investigated the dependence of temperature uniformity dufing millisecond annealing (MSA) on the pattern density and its effect on device characteristics and static random access memory (SRAM) yields with 45-nm node technology. By comparing flash lamp annealing (FLA) and laser spike annealing (LSA), we found FLA was difficult to use in our multiple MSA scheme without absorbing layers because of...
This work reports on first experiments with millisecond flash anneals for SiGe HBTs. Model experiments on blanket wafers were used to study the effects of flash annealing on HBT-typical doping profiles in comparison to the standard spike annealing, and to find out an appropriate temperature range for transistor functionality. An integration lot was processed and analyzed to get a comprehensive insight...
We have developed a carbon absorber process to reduce the pattern effect. This process consists of deposition of carbon, flash lamp annealing (FLA) in an oxygen ambient and SPM-APM wet cleaning. The feature of this process is that the carbon absorber equalizes the light absorption from flash lamps macroscopically and microscopically on the annealed wafer. As a result, we can suppress the pattern effect...
Advanced SOI material can be treated in advantageous manner regarding ultra shallow junction (USJ) formation using millisecond annealing techniques. Especially, strained Si and SiGe/Si heterostructures on insulator (sSOI and sHOI) are promising channel materials for future nanoelectronic devices. Their successful integration into new device architectures depends on the ability of forming ultra shallow...
We investigated the influence of extremely high doping concentrations on the sheet resistance of ion implants annealed by FLA. As the implant depth was ultra-shallow and the amount of dopant atoms high, the concentration of dopant near the surface was exceedingly high, above the solid solubility limit, resulting in high Rs. The cause of this is mainly due to the formation of clusters, which was confirmed...
We have presented functional annealing data using the FSP-FLA (flexibly-shaped-pulse flash lamp annealing), together with some examples of the multi-functionality. First, we showed that the FSP-FLA can control thermal budget whilst sustaining high dopant activation, recovering crystalline defects, and controlling thermal diffusion length. Secondly, by combining impulses from conventional FLA and the...
SDE implants were carried out in a VIISta PLAD system using both p- and n-type dopant precursors. The advanced control features in the PLAD system allowed for dopant profile control by appropriately balancing the constituent components of the plasma doping process, and retrograde dopant profiles were demonstrated for the first time using a plasma doping system. The p-doped samples were flash annealed,...
We improve the performance of thin-film solar cells using polycrystalline silicon (poly-Si) films formed by flash lamp annealing (FLA) of precursor amorphous Si (a-Si) films on glass substrates by modulating their surface structures. The surface morphology of the poly-Si films can be easily controlled by conventional wet chemical etching using mixed acid of HF and HNO3, accompanied by effective reduction...
Shallow, about 20 nm, depth n+/p junction of Ge was successfully fabricated by As+ implantation and FLA. Since the junction depth was limited by implantation energy, much shallower junction would be fabricated by reducing the energy. High potential of arsenic as a dopant was clearly demonstrated, although FLA parameters were not optimized yet. Since SPE retardation was found in the specimens with...
Due to the continuous CMOS transistor scaling requirements, millisecond annealing has been introduced in 45 nm CMOS technology to enhance dopant activation with minimal dopant diffusion. This paper considers two different ultra fast annealing technologies as alternative to the conventional rapid thermal annealing strategy for the 32 nm node. We compared a long wavelength non-melt laser spike annealing...
Defects-induced contact misalignment when combining embedded SiGe with flash lamp annealing (FLA) on high performance 40 nm CMOS process has been analyzed both by experiments and novel dislocation loop dynamics simulation. We have found that slips which are created at the SiGe dummy patterns worsen the contact misalignment for the first time. Design guide lines on shape of SiGe patterns for slip free...
We propose the suitable FLA method for pFET device activation by using flexibly-shaped-pulse FLA (FSP-FLA). For the activation annealing by FLA on B without pre-amorphous implantation (PAI) process, increase in preheat temperature before flash is the most effective. By using FSP-FLA, ~1000degC 10-ms preheat was performed. It achieves very shallow and high activated junction without PAI equivalently...
Chemical bonding states of boron (B) in shallow P+/N junctions were studied by soft X-ray photoelectron spectroscopy (SXPES). The concentration profiles of B having different binding energies were successfully determined the SXPES combined with the step-by-step etching of Si substrates. The concentration profiles of B having the lowest binding energy can be assigned as activated B, which agreed quite...
We applied flash lamp annealing (FLA) in Ni-silicidation to our developed dopant confinement layer (DCL) structure for the first time. DCL technique is a novel stress memorization technique (SMT). We successfully improved the short channel effect (SCE) with keeping a high drive current by FLA in Ni-silicidation. For pMOSFET, 2 layers Ni fully-silicide (Ni-FUSI) was selectively formed on gates, and...
We demonstrated for the first time that novel Ni-FUSI process using FLA (Melt-FUSI) dramatically improved both electrical characteristics and cost-benefit performance of LSTP devices. Since the Tinv was aggressively scaled (Tinv = 2.1 nm) with keeping SiON-gate leakage current and increasing hole mobility twice, we achieved the record Ion of 300 muA/mum at the Ioff of 20 pA/mum for the pMOS transistor...
We propose the suitable milli-second annealing (MSA) for metal/high-k device performance and ultra-shallow-junction (USJ) fabrication: flexibly-shaped-pulse flash lamp annealing (FSP-FLA). The conventional FLA treatment on metal/high-k device degrades its effective electron mobility (mueff) and bias temperature instability (BTI) characteristics. A recovery annealing (RA) treatment after FLA is most...
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