The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Terahertz-range intracenter silicon lasers have demonstrated significant progress over past decade in expanding the frequency operation range, in manipulation of a silicon matrix as well as in lowering of optical pump threshold. While terahertz gain realized in silicon lasers has been already defined, optical losses in the active media have not been yet measured experimentally. We applied continuous...
It has been demonstrated that external uniaxial stress applied to silicon crystals doped by bismuth and antimony influences on the emission spectrum of intracenter lasers under CO2 laser pumping. For small stress the spin-orbit coupling of lower laser working states can be tuned. The details of frequency change depend on crystallographic orientation and donor element.
Terahertz stimulated emission (4-6 THz) from optically excited group-V donors (phosphor P, antimony Sb, arsenic As, bismuth Bi) in axially compressed silicon crystal has been studied. As shown CW laser operation of P, Sb, As donors become reachable due to the laser threshold decrease induced by the stress.
The effect of uniaxial stress along [100] on stimulated emission spectrum from bismuth donor in silicon has been investigated. The output emission intensity has a non-monotonic behavior with minimum at 0.1 kbar, further increase with maximum at 0.4 kbar and ceases for stress higher than 0.7 kbar. The zero stress lines 2p+ rarr ls(T2: Gamma8), 2rho+ rarr ls(E) are changed by the 2p+ rarr ls(T2: Gamma...
Results of experimental and theoretical study of terahertz stimulated emission from optically excited group-V donors (phosphor P, antimony Sb, arsenic As, bismuth Bi) in uniaxially stressed and liquid helium cooled silicon crystal are summarized and discussed. It is shown that compressive force of 1-1.5 kbar for P, Sb and of 2-3 kbar for As, Bi applied along {100} crystallographic orientations results...
The experimental results of uniaxial stress study of optically pumped THz silicon lasers are presented. The uniaxial stress leads to the shift of pairs of valleys with respect to each other that, in turn, affects the intervalley scattering and causes changing of the lifetimes of principal states. The experiments carried out have shown considerable (10 times) decrease of pump threshold for Si:P and...
Terahertz silicon lasers are based on intracenter transitions of group-V donors. The peculiarities due to electron-phonon interaction and the state-of-the-art performance such as frequency tunability by stress or magnetic field are discussed.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.