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The result on theoretical and experimental study of principal states relaxation for terahertz range silicon laser based on phosphor and arsenic shallow donor centers are reported. Numerical simulations show that f-TA and f-LA intervalley phonons scattering dominates in laser state relaxation. The theoretical values of relaxation rates fit well to the experimental data obtained by the pump-and-probe...
The effect of uniaxial stress along [100] on stimulated emission spectrum from bismuth donor in silicon has been investigated. The output emission intensity has a non-monotonic behavior with minimum at 0.1 kbar, further increase with maximum at 0.4 kbar and ceases for stress higher than 0.7 kbar. The zero stress lines 2p+ rarr ls(T2: Gamma8), 2rho+ rarr ls(E) are changed by the 2p+ rarr ls(T2: Gamma...
In this paper, a thorough characterization of terahertz silicon lasers with respect to doping concentration and operation temperature has been carried out. Several factors limiting the laser operation, such as heating of the laser crystal and absorption by photoinduced free carriers, are discussed. The optimal doping concentration has been determined. The influence of the pump geometry on the laser...
Results of experimental and theoretical study of terahertz stimulated emission from optically excited group-V donors (phosphor P, antimony Sb, arsenic As, bismuth Bi) in uniaxially stressed and liquid helium cooled silicon crystal are summarized and discussed. It is shown that compressive force of 1-1.5 kbar for P, Sb and of 2-3 kbar for As, Bi applied along {100} crystallographic orientations results...
Stimulated donor and Raman Stokes emission has been achieved under intracenter excitation and photoionization of shallow donor centers in silicon. A pulsed laser emission of up to a few mW of peak power in the 1-7 THz frequency range has been obtained at low temperatures (< 30 K). Thorough laser characterization and further optimization of the laser threshold and efficiency has been carried out.
The frequency of optically pumped terahertz silicon lasers can be tuned by shifting the energy levels involved in the laser process. We have demonstrated the feasibility to tune the frequency of the terahertz silicon lasers by applying an external magnetic field or an external compressive force.
The experimental results of uniaxial stress study of optically pumped THz silicon lasers are presented. The uniaxial stress leads to the shift of pairs of valleys with respect to each other that, in turn, affects the intervalley scattering and causes changing of the lifetimes of principal states. The experiments carried out have shown considerable (10 times) decrease of pump threshold for Si:P and...
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