The effect of uniaxial stress along [100] on stimulated emission spectrum from bismuth donor in silicon has been investigated. The output emission intensity has a non-monotonic behavior with minimum at 0.1 kbar, further increase with maximum at 0.4 kbar and ceases for stress higher than 0.7 kbar. The zero stress lines 2p+ rarr ls(T2: Gamma8), 2rho+ rarr ls(E) are changed by the 2p+ rarr ls(T2: Gamma7) for stress higher than 0.2 kbar. The frequency of such transition is tuned by uniaxial deformation from 212 cm-1 for zero stress till 208 cm-1 for stress higher than 0.3 kbar.